公开(公告)号：US09269546B2

公开(公告)日：2016-02-23

申请号：US13945200

申请日：2013-07-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Ming-Feng Wu ,  Ajit Balakrishna ,  Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/3233

Abstract: Electron beam-confining electromagnets of an electron beam generator are aligned with an electron beam axis, each of the electromagnets being folded to define a main section and a pair of angled wing sections disposed at respective angles relative to said main section, and a conductor wound around the edge.

Abstract translation: 电子束发生器的电子束约束电磁体与电子束轴线对准，每个电磁体被折叠以限定相对于所述主要部分以相应角度设置的主部分和一对成角度的翼部分，并且导体缠绕 围绕边缘。

公开(公告)号：US09564297B2

公开(公告)日：2017-02-07

申请号：US14307945

申请日：2014-06-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Ming-Feng Wu ,  Leonid Dorf ,  Shahid Rauf ,  Ying Zhang ,  Kenneth S. Collins ,  Hamid Tavassoli ,  Kartik Ramaswamy ,  Steven Lane

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/32082 ,  H01J37/3233 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32458

Abstract: In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and a remote radical source is incorporated with the process chamber.

Abstract translation: 在用于处理工件的等离子体反应器中，使用电子束作为等离子体源，并且将远程自由基源与处理室结合。

公开(公告)号：US20160005833A1

公开(公告)日：2016-01-07

申请号：US14323855

申请日：2014-07-03

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Kartik Ramaswamy ,  Ying Zhang ,  Hua Chang ,  Leonid Dorf ,  Ming-Feng Wu ,  Shahid Rauf

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/785 ,  H01J37/32357 ,  H01L21/31116 ,  H01L29/41791 ,  H01L29/6653 ,  H01L29/66795

Abstract: Transistors and their methods of formation are described. Low dielectric constant material (e.g. a void) is placed between an elongated gate and a contact to increase the attainable switching speed of the gate of the device. An elongated structural slab of silicon nitride is temporarily positioned on both sides of the gate. Silicon oxide is formed over the silicon nitride slabs and the gate. Contacts are formed through the silicon oxide. The silicon oxide is selectively etched back to expose the silicon nitride slab. A portion or all the silicon nitride slab is removed and replaced with low-K dielectric or any dielectric with an air-gap to enable higher switching speed of the transistor. The highly-selective silicon nitride etch uses remotely excited fluorine and a very low electron temperature in the substrate processing region.

Abstract translation: 描述了晶体管及其形成方法。 低介电常数材料（例如空隙）放置在细长栅极和触点之间，以增加器件栅极的可达到的开关速度。 细长的氮化硅结构板临时定位在浇口的两侧。 在氮化硅板和栅极上形成氧化硅。 触点通过氧化硅形成。 选择性地回蚀氧化硅以暴露氮化硅板。 去除一部分或全部氮化硅板，并用低K电介质或具有气隙的任何电介质代替晶体管的更高的开关速度。 高选择性氮化硅蚀刻在基板处理区域中使用远程激发的氟和非常低的电子温度。

公开(公告)号：US20140035458A1

公开(公告)日：2014-02-06

申请号：US13945200

申请日：2013-07-18

Applicant: Applied Materials, Inc.

Inventor： Ming-Feng Wu ,  Ajit Balakrishna ,  Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/3233

Abstract: Electron beam-confining electromagnets of an electron beam generator are aligned with an electron beam axis, each of the electromagnets being folded to define a main section and a pair of angled wing sections disposed at respective angles relative to said main section, and a conductor wound around the edge.

Abstract translation: 电子束发生器的电子束约束电磁体与电子束轴线对准，每个电磁体被折叠以限定相对于所述主要部分以相应角度设置的主部分和一对成角度的翼部分，并且导体缠绕 围绕边缘。

公开(公告)号：US20140339980A1

公开(公告)日：2014-11-20

申请号：US14307945

申请日：2014-06-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Ming-Feng Wu ,  Leonid Dorf ,  Shahid Rauf ,  Ying Zhang ,  Kenneth S. Collins ,  Hamid Tavassoli ,  Kartik Ramaswamy ,  Steven Lane

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/32082 ,  H01J37/3233 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32458

Abstract: In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and a remote radical source is incorporated with the process chamber.

Abstract translation: 在用于处理工件的等离子体反应器中，使用电子束作为等离子体源，并且将远程自由基源与处理室结合。