公开(公告)号：US20230175123A1

公开(公告)日：2023-06-08

申请号：US18051321

申请日：2022-10-31

Applicant: APPLIED MATERIALS, INC.

Inventor： James D. Carducci ,  Kenneth S. Collins ,  Kartik Ramaswamy

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/4401 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/4585 ,  C23C16/4586

Abstract: Certain embodiments of the present disclosure relate to chamber liners, processing chambers that include chamber liners, and methods of using the same. In one embodiment, a method of operating a processing chamber includes causing a chamber liner within the processing chamber to move to a loading position to allow a substrate to be inserted through an access port of the processing chamber into an interior volume of the processing chamber. The method further includes causing the chamber liner to move to an operation position that blocks the access port after the substrate has been inserted into the interior volume. The method further includes generating a plasma using a cathode assembly.

公开(公告)号：US20230057145A1

公开(公告)日：2023-02-23

申请号：US17831781

申请日：2022-06-03

Applicant: Applied Materials, Inc.

Inventor： DAISUKE SHIMIZU ,  Kenji Takeshita ,  James D. Carducci ,  Li Ling ,  Hikaru Watanabe ,  Kenneth S. Collins ,  Michael R. Rice

IPC: H01J37/32 ,  H01L21/3065

Abstract: A plasma treatment chamber comprises one or more sidewalls and a support surface within the sidewalls holds a workpiece. An array of individual gas injectors is distributed about the sidewalls. Pump ports are along the sidewalls to eject gas from the chamber. Aa etch rate uniformity of a material on the workpiece is controlled by: using the array gas injectors to inject one or more gas flows in across the workpiece; injecting a first gas flow from a first set of adjacent individual gas injectors to etch the materials on the workpiece; and simultaneously injecting a second gas flow from remaining gas injectors. The second gas flow either dilutes the first gas flow to reduce an area on the workpiece having a faster etch rate, or acts as an additional etchant to increase the etch rate in the area of the workpiece having the faster etch rate.

公开(公告)号：US11355321B2

公开(公告)日：2022-06-07

申请号：US15630828

申请日：2017-06-22

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Michael R. Rice ,  Kartik Ramaswamy ,  James D. Carducci

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/54 ,  C23C16/509 ,  C23C16/455

Abstract: A processing tool for a plasma process includes a chamber body that has an interior space that provides a plasma chamber and that has a ceiling and an opening on a side opposite the ceiling, a workpiece support to hold a workpiece such that at least a portion of a front surface of the workpiece faces the opening, an actuator to generate relative motion between the chamber body and the workpiece support such that the opening moves laterally across the workpiece, a gas distributor to deliver a processing gas to the plasma chamber, an electrode assembly comprising a plurality of coplanar filaments extending laterally through the plasma chamber between the workpiece support and the ceiling, each of the plurality of filaments including a conductor, and a first RF power source to supply a first RF power to the conductors of the electrode assembly to form a plasma.

公开(公告)号：US10475626B2

公开(公告)日：2019-11-12

申请号：US14660531

申请日：2015-03-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Kenneth S. Collins ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Leonid Dorf ,  Yang Yang

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32

Abstract: A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.

公开(公告)号：US10418225B2

公开(公告)日：2019-09-17

申请号：US16107855

申请日：2018-08-21

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Michael R. Rice ,  Kartik Ramaswamy ,  James D. Carducci ,  Yue Guo ,  Olga Regelman

IPC: H01J37/32

Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

公开(公告)号：US10312056B2

公开(公告)日：2019-06-04

申请号：US16059608

申请日：2018-08-09

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Michael R. Rice ,  Kartik Ramaswamy ,  James D. Carducci ,  Yue Guo ,  Olga Regelman

IPC: H01J37/32

Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

公开(公告)号：US20180308661A1

公开(公告)日：2018-10-25

申请号：US15630748

申请日：2017-06-22

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. Collins ,  Michael R. Rice ,  Kartik Ramaswamy ,  James D. Carducci

IPC: H01J37/32 ,  C23C16/507 ,  C23C16/54

CPC classification number: H01J37/32568 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/507 ,  C23C16/545 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/3277 ,  H01J37/32816 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/68785

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber and having a ceiling, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece facing the ceiling, an intra-chamber electrode assembly that includes an insulating frame and a filament extending laterally through the plasma chamber between the ceiling and the workpiece support, the filament including a conductor at least partially surrounded by an insulating shell that extends from the insulating frame, and a first RF power source to supply a first RF power to the conductor of the intra-chamber electrode assembly.

公开(公告)号：US20140312766A1

公开(公告)日：2014-10-23

申请号：US14319089

申请日：2014-06-30

Applicant: APPLIED MATERIALS, INC.

Inventor： James D. Carducci ,  Kenneth S. Collins ,  Richard Fovell ,  Jason A. Kenney ,  Kartik Ramaswamy ,  Shahid Rauf

IPC: H01J37/32 ,  C23C16/505

CPC classification number: H01J37/3211 ,  C23C16/505 ,  H01J37/32119 ,  H01J37/32183 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma reactor has an overhead inductively coupled plasma source with two coil antennas and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

Abstract translation: 等离子体反应器具有具有两个线圈天线的顶部电感耦合等离子体源，并且对称和径向RF馈送以及围绕对称和径向RF馈送的圆柱形RF屏蔽。 径向RF馈送对称地馈送到等离子体源。

公开(公告)号：US20140020839A1

公开(公告)日：2014-01-23

申请号：US13897592

申请日：2013-05-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Jason A. Kenney ,  James D. Carducci ,  Kenneth S. Collins ,  Richard Fovell ,  Kartik Ramaswamy ,  Shahid Rauf

IPC: H01J37/04

CPC classification number: H01J37/04 ,  H01J37/321 ,  H01J37/3211 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with RF feeds arranged in equilateral symmetry.

Abstract translation: 等离子体反应器具有架空多线圈感应等离子体源，RF等离子体源以等边对称排列。

公开(公告)号：US20230162950A1

公开(公告)日：2023-05-25

申请号：US17532915

申请日：2021-11-22

Applicant: Applied Materials, Inc.

Inventor： Rajinder Dhindsa ,  Kenneth S. Collins ,  Michael R. Rice ,  James D. Carducci

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/32

CPC classification number: H01J37/32449 ,  H01J37/32926 ,  H01L21/31116 ,  H01L21/32 ,  H01L27/11551

Abstract: A plasma treatment chamber comprises one or more sidewalls. A support surface within the one or more sidewalls holds a workpiece. A first gas injector along the one or more sidewalls injects a first gas flow in a first direction generally parallel to and across a surface of the workpiece. A first pump port along the one or more sidewalls generally opposite of the first gas injector pumps out the first gas flow. A second gas injector along the one or more sidewalls injects a second gas flow in a second direction generally parallel to and across the surface of the workpiece. A second pump port along the one or more sidewalls generally opposite of the second gas injector pumps out the second gas flow. Conductance control rings modulate conductance of the pump ports and are located proximate to plasma screens at a top of the pump ports.