公开(公告)号：US12018364B2

公开(公告)日：2024-06-25

申请号：US17119655

申请日：2020-12-11

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick

IPC: C23C16/40

CPC classification number: C23C16/407

Abstract: Methods for forming coating films comprising germanium oxide are disclosed. In some embodiments, the films are super-conformal to a feature on the surface of a substrate. The films are deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the super-conformal film.

公开(公告)号：US11430801B2

公开(公告)日：2022-08-30

申请号：US17227925

申请日：2021-04-12

Applicant: APPLIED MATERIALS, INC.

Inventor： Takehito Koshizawa ,  Mukund Srinivasan ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Sung-Kwan Kang ,  Gill Y. Lee ,  Susmit Singha Roy

IPC: H01L27/1157 ,  H01L27/11582

Abstract: Methods and apparatus for forming a plurality of nonvolatile memory cells are provided herein. In some embodiments, the method, for example, includes forming a plurality of nonvolatile memory cells, comprising forming, on a substrate, a stack of alternating layers of metal including a first layer of metal and a second layer of metal different from the first layer of metal; removing the first layer of metal to form spaces between the alternating layers of the second layer of metal; and one of depositing a first layer of material to partially fill the spaces to leave air gaps therein or depositing a second layer of material to fill the spaces.

公开(公告)号：US20220238531A1

公开(公告)日：2022-07-28

申请号：US17720465

申请日：2022-04-14

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Pramit Manna ,  Nancy Fung ,  Eswaranand Venkatasubramanian ,  Ho-Yung David Hwang ,  Samuel E. Gottheim

IPC: H01L27/108

Abstract: Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

公开(公告)号：US11335690B2

公开(公告)日：2022-05-17

申请号：US17147001

申请日：2021-01-12

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Pramit Manna ,  Nancy Fung ,  Eswaranand Venkatasubramanian ,  Ho-yung David Hwang ,  Samuel E. Gottheim

IPC: H01L27/10 ,  H01L21/02 ,  H01L27/108

Abstract: Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

公开(公告)号：US10998329B2

公开(公告)日：2021-05-04

申请号：US16517956

申请日：2019-07-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Takehito Koshizawa ,  Mukund Srinivasan ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Sung-Kwan Kang ,  Gill Y. Lee ,  Susmit Singha Roy

IPC: H01L27/1157 ,  H01L27/11582

Abstract: Methods and apparatus for forming a plurality of nonvolatile memory cells are provided herein. In some embodiments, the method, for example, includes forming a plurality of nonvolatile memory cells, comprising forming, on a substrate, a stack of alternating layers of metal including a first layer of metal and a second layer of metal different from the first layer of metal; removing the first layer of metal to form spaces between the alternating layers of the second layer of metal; and one of depositing a first layer of material to partially fill the spaces to leave air gaps therein or depositing a second layer of material to fill the spaces.

公开(公告)号：US12198936B2

公开(公告)日：2025-01-14

申请号：US18242082

申请日：2023-09-05

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick

IPC: H01L21/311 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/306 ,  H01L21/762 ,  H01L21/768

Abstract: Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed. In some embodiments, the gap fill material is deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the gap fill material. A process for removal of germanium oxide is also disclosed.

公开(公告)号：US11791155B2

公开(公告)日：2023-10-17

申请号：US17004262

申请日：2020-08-27

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/02 ,  H01L29/16

CPC classification number: H01L21/02304 ,  H01L21/02236 ,  H01L21/02362 ,  H01L21/02532 ,  H01L29/16

Abstract: Examples of the present technology include semiconductor processing methods to form diffusion barriers for germanium in a semiconductor structure. The methods may include forming a semiconductor layer stack from pairs of Si-and-SiGe layers. The Si-and-SiGe layer pairs may be formed by forming a silicon layer, and then forming the germanium barrier layer of the silicon layer. In some embodiments, the germanium-barrier layer may be less than or about 20 Å. A silicon-germanium layer may be formed on the germanium-barrier layer to complete the formation of the Si-and-SiGe layer pair. In some embodiments, the silicon layer may be an amorphous silicon layer, and the SiGe layer may be characterized by greater than or about 5 atom % germanium. Examples of the present technology also include semiconductor structures that include a silicon-germanium layer, a germanium-barrier layer, and a silicon layer.

公开(公告)号：US11784042B2

公开(公告)日：2023-10-10

申请号：US17961224

申请日：2022-10-06

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Yang Yang ,  Pramit Manna ,  Kartik Ramaswamy ,  Takehito Koshizawa ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/033 ,  C23C16/26

CPC classification number: H01L21/02274 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/0332

Abstract: Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom. In one embodiment, a method of processing a substrate includes positioning a substrate on a substrate support, the substrate support disposed in a processing volume of a processing chamber, flowing a processing gas comprising a hydrocarbon gas and a diluent gas into the processing volume, maintaining the processing volume at a processing pressure less than about 100 mTorr, igniting and maintaining a deposition plasma of the processing gas by applying a first power to one of one or more power electrodes of the processing chamber, maintaining the substrate support at a processing temperature less than about 350° C., exposing a surface of the substrate to the deposition plasma, and depositing an amorphous carbon layer on the surface of the substrate.

公开(公告)号：US20210082936A1

公开(公告)日：2021-03-18

申请号：US17019334

申请日：2020-09-13

Applicant: Applied Materials, Inc.

Inventor： Takehito Koshizawa

IPC: H01L27/11556 ,  H01L27/11582 ,  H01L21/768

Abstract: Electronic devices and methods of forming the electronic devices are described. The electronic devices comprise a plurality of memory holes extending along a first direction through a plurality of alternating oxide and nitride layers. Each memory hole has a core oxide surrounded by a semiconductor material, the semiconductor material surrounded by a dielectric. The memory holes are staggered to provide a plurality of memory hole lines having spaced memory holes so that adjacent memory hole lines have the memory holes in a staggered configuration. A conductive material is on top of the stack of alternating oxide and nitride layers. A dielectric filled cut line extends through the conductive material in a direction across the plurality of memory hole lines. The dielectric filled cut line separates a first memory hole line from an adjacent second memory hole line without disabling the functionality of the memory holes.

公开(公告)号：US10910381B2

公开(公告)日：2021-02-02

申请号：US16527915

申请日：2019-07-31

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Pramit Manna ,  Nancy Fung ,  Eswaranand Venkatasubramanian ,  Ho-yung David Hwang ,  Samuel E. Gottheim

IPC: H01L27/10 ,  H01L21/02 ,  H01L27/108

Abstract: Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.