公开(公告)号：US09218980B2

公开(公告)日：2015-12-22

申请号：US14026147

申请日：2013-09-13

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. Zope ,  Avgerinos V. Gelatos

IPC: H01L21/44 ,  H01L21/285 ,  C23C14/22 ,  C23C16/18 ,  C23C16/50 ,  H01L21/768 ,  C23C16/02

CPC classification number: H01L21/76879 ,  C23C14/22 ,  C23C16/0245 ,  C23C16/0281 ,  C23C16/18 ,  C23C16/50 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention generally relate to a method of forming a cobalt layer on a dielectric material without incubation delay. Prior to depositing the cobalt layer using CVD, the surface of the dielectric material is pretreated at a temperature between 100° C. and 250° C. Since the subsequent CVD cobalt process is also performed at between 100° C. and 250° C., one processing chamber is used for pretreating the dielectric material and forming of the cobalt layer. The combination of processing steps enables use of two processing chambers to deposit cobalt.

Abstract translation: 本发明的实施方案一般涉及在电介质材料上形成钴层的方法，而不会产生温度延迟。 在使用CVD沉积钴层之前，介电材料的表面在100℃和250℃之间的温度下预处理。由于随后的CVD钴工艺也在100℃和250℃之间进行。 使用一个处理室来预处理介电材料和形成钴层。 处理步骤的组合使得能够使用两个处理室来沉积钴。

公开(公告)号：US09842769B2

公开(公告)日：2017-12-12

申请号：US15145578

申请日：2016-05-03

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. Zope ,  Avgerinos V. Gelatos ,  Bo Zheng ,  Yu Lei ,  Xinyu Fu ,  Srinivas Gandikota ,  Sang-ho Yu ,  Mathew Abraham

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/48 ,  H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L29/66

CPC classification number: H01L21/76879 ,  H01L21/02057 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/4846 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/5329 ,  H01L29/66621

Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

公开(公告)号：US09528183B2

公开(公告)日：2016-12-27

申请号：US14255443

申请日：2014-04-17

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Bo Zheng ,  Sang Ho Yu ,  Avgerinos V. Gelatos ,  Bhushan N. Zope ,  Jeffrey Anthis ,  Benjamin Schmiege

IPC: C25F1/00 ,  C23C16/44 ,  H01J37/32 ,  B08B9/00

CPC classification number: C23C16/4405 ,  B08B9/00 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32862

Abstract: Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate processing chamber. In one implementation, a method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber is provided. The method comprises forming a reactive species from the fluorine containing cleaning gas mixture, permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state and purging the cobalt fluoride in gaseous state out of the substrate processing chamber.

Abstract translation: 本文描述的实施方式一般涉及用于从半导体衬底处理室的一个或多个内表面原位去除不想要的沉积累积的方法和装置。 在一个实施方式中，提供了在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除含钴或钴的沉积物的方法。 该方法包括从含氟清洗气体混合物中形成反应性物质，使反应物质与钴和/或含钴沉积物反应形成气态氟化钴，并将氟化氢以气态吹扫出来 基板处理室。

公开(公告)号：US20150093862A1

公开(公告)日：2015-04-02

申请号：US14064933

申请日：2013-10-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Aneesh Nainani ,  Bhushan N. Zope ,  Leonid Dorf ,  Shahid Rauf ,  Adam Brand ,  Mathew Abraham ,  Subhash Deshmukh

IPC: H01L21/02 ,  H01L21/768 ,  H01L29/66

CPC classification number: H01L21/02063 ,  H01J37/3233 ,  H01L21/02057 ,  H01L21/02661 ,  H01L21/3065 ,  H01L21/76814 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/8258 ,  H01L29/66795

Abstract: An electron beam plasma source is used in a soft plasma surface treatment of semiconductor surfaces containing Ge or group III-V compound semiconductor materials.

Abstract translation: 电子束等离子体源用于含有Ge或III-V族化合物半导体材料的半导体表面的软等离子体表面处理。

公开(公告)号：US10699946B2

公开(公告)日：2020-06-30

申请号：US15364780

申请日：2016-11-30

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. Zope ,  Avgerinos V. Gelatos ,  Bo Zheng ,  Yu Lei ,  Xinyu Fu ,  Srinivas Gandikota ,  Sang Ho Yu ,  Mathew Abraham

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/18 ,  H01L23/532

Abstract: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

公开(公告)号：US09637819B2

公开(公告)日：2017-05-02

申请号：US14543064

申请日：2014-11-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Bhushan N. Zope ,  Avgerinos V. Gelatos

IPC: H05H1/24 ,  C23C16/06 ,  C23C16/04 ,  C23C16/24 ,  C23C16/02 ,  C23C16/50 ,  C23C14/04

CPC classification number: C23C16/045 ,  C23C14/046 ,  C23C16/0281 ,  C23C16/06 ,  C23C16/24 ,  C23C16/50

Abstract: Methods for depositing cobalt in features of a substrate include providing a substrate to a process chamber, the substrate having a first surface, a feature formed in the first surface comprising an opening defined by one or more sidewalls, a bottom surface, and upper corners, and the substrate having a first layer formed atop the first surface and the opening, wherein a thickness of the first layer is greater proximate the upper corners of the opening than at the sidewalls and bottom of the opening; exposing the substrate to a plasma formed from a silicon-containing gas to deposit a silicon layer predominantly onto a portion of the first layer atop the first surface of the substrate; and depositing a cobalt layer atop the substrate to fill the opening, wherein the silicon layer inhibits deposition of cobalt on the portion of the first layer atop the first surface of the substrate.

公开(公告)号：US09378941B2

公开(公告)日：2016-06-28

申请号：US14064933

申请日：2013-10-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Aneesh Nainani ,  Bhushan N. Zope ,  Leonid Dorf ,  Shahid Rauf ,  Adam Brand ,  Mathew Abraham ,  Subhash Deshmukh

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/768 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/8238 ,  H01L21/8258

CPC classification number: H01L21/02063 ,  H01J37/3233 ,  H01L21/02057 ,  H01L21/02661 ,  H01L21/3065 ,  H01L21/76814 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/8258 ,  H01L29/66795

Abstract: An electron beam plasma source is used in a soft plasma surface treatment of semiconductor surfaces containing Ge or group III-V compound semiconductor materials.

Abstract translation: 电子束等离子体源用于含有Ge或III-V族化合物半导体材料的半导体表面的软等离子体表面处理。

公开(公告)号：US20160104639A1

公开(公告)日：2016-04-14

申请号：US14975945

申请日：2015-12-21

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. Zope ,  Avgerinos V. Gelatos

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  C23C14/22 ,  C23C16/0245 ,  C23C16/0281 ,  C23C16/18 ,  C23C16/50 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention generally relate to a method of forming a cobalt layer on a dielectric material without incubation delay. Prior to depositing the cobalt layer using CVD, the surface of the dielectric material is pretreated at a temperature between 100° C. and 250° C. Since the subsequent CVD cobalt process is also performed at between 100° C. and 250° C., one processing chamber is used for pretreating the dielectric material and forming of the cobalt layer. The combination of processing steps enables use of two processing chambers to deposit cobalt.

公开(公告)号：US10269633B2

公开(公告)日：2019-04-23

申请号：US15811647

申请日：2017-11-13

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. Zope ,  Avgerinos V. Gelatos ,  Bo Zheng ,  Yu Lei ,  Xinyu Fu ,  Srinivas Gandikota ,  Sang-Ho Yu ,  Mathew Abraham

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/48 ,  H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L29/66

Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

公开(公告)号：US10199230B2

公开(公告)日：2019-02-05

申请号：US14790862

申请日：2015-07-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Seshadri Ganguli ,  Yixiong Yang ,  Bhushan N. Zope ,  Xinyu Fu ,  Avgerinos V. Gelatos ,  Guoqiang Jian ,  Bo Zheng

IPC: H01L21/285 ,  H01L21/768 ,  H01L23/532

Abstract: Methods for selectively depositing a metal silicide layer are provided herein. In some embodiments, a method of selectively depositing a metal silicide layer includes: (a) providing a substrate having a first layer to a process chamber, wherein the first layer comprises a first surface and a feature formed in the first surface comprising an opening defined by one or more sidewalls and a bottom surface wherein the sidewalls comprise one of silicon oxide or silicon nitride and wherein the bottom surface comprises at least one of silicon or germanium; (b) exposing the substrate to a precursor gas comprising a metal halide; (c) purging the precursor gas from the process chamber using an inert gas; (d) exposing the substrate to a silicon containing gas; (e) purging the silicon containing gas from the process chamber using an inert gas; (f) repeating (b)-(e) to selectively deposit a metal silicide along the bottom surface to a predetermined thickness; and (g) annealing the substrate after depositing the metal silicide layer.