公开(公告)号：US11935732B2

公开(公告)日：2024-03-19

申请号：US16251716

申请日：2019-01-18

申请人： APPLIED MATERIALS, INC.

发明人： Adolph M. Allen ,  Kirankumar Neelasandra Savandaiah ,  Randal D. Schmieding ,  Vanessa Faune

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/56 ,  H01J37/32

CPC分类号： H01J37/3441 ,  C23C14/34 ,  C23C14/564 ,  H01J37/32651 ,  H01J2237/332

摘要： A process kit comprises a shield and ring assembly for positioning about a substrate support in a processing chamber to reduce deposition of process deposits on internal chamber components and an overhang edge of the substrate. The shield comprises a cylindrical band having a top wall configured to surround a sputtering target and a sloped portion of a bottom wall having a substantially straight profile with gas conductance holes configured to surround the substrate support. The ring assembly comprises a cover ring having a bulb-shaped protuberance about the periphery of the ring. The bulb-shaped protuberance of the cover ring is able to block a line-of-sight between the gas conductance holes on the shield and an entrance to a chamber body cavity in the processing chamber.

公开(公告)号：US11289312B2

公开(公告)日：2022-03-29

申请号：US16438560

申请日：2019-06-12

申请人： APPLIED MATERIALS, INC.

发明人： Adolph M. Allen ,  Vanessa Faune ,  Zhong Qiang Hua ,  Kirankumar Neelasandra Savandaiah ,  Anantha K. Subramani ,  Philip A. Kraus ,  Tza-Jing Gung ,  Lei Zhou ,  Halbert Chong ,  Vaibhav Soni ,  Kishor Kalathiparambil

IPC分类号： H01J37/32 ,  H01J37/34 ,  C23C16/455 ,  C23C14/54

摘要： Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments a process kit configured for use in a process chamber for processing a substrate includes a shield having a cylindrical body having an upper portion and a lower portion; an adapter section configured to be supported on walls of the process chamber and having a resting surface to support the shield; and a heater coupled to the adapter section and configured to be electrically coupled to at least one power source of the processes chamber to heat the shield.

公开(公告)号：US20190385908A1

公开(公告)日：2019-12-19

申请号：US16442941

申请日：2019-06-17

申请人： Applied Materials, Inc.

发明人： Xiangjin Xie ,  Rui Li ,  Goichi Yoshidome ,  Adolph M. Allen ,  Xianmin Tang

IPC分类号： H01L21/768 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/3205

摘要： Methods of treating a film on a substrate in a PVD chamber are described. The methods include biasing the substrate with an RF power to provide a biased substrate, etching the film on the biased substrate with at least one gas, and sputtering first and second sources of cobalt onto the film on the biased substrate to form a doped film. Some embodiments advantageously provide doped films as liners or barrier layers. Some embodiments provide for the deposition of bulk materials on the doped films. Some embodiments advantageously minimize the thickness of the individual layers.