公开(公告)号：US11996129B2

公开(公告)日：2024-05-28

申请号：US16308337

申请日：2017-06-12

申请人： Cornell University ,  The Curators of the University of Missouri ,  The Regents of the University of Michigan ,  Oregon State University ,  Mostafizur Rahman ,  Kelin Kuhn ,  John Heron

发明人： Darrell Schlom ,  Mostafizur Rahman ,  Kelin Kuhn ,  John Heron

IPC分类号： G11C16/04 ,  G11C11/16 ,  G11C11/18 ,  G11C11/56 ,  H10N52/85

CPC分类号： G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  G11C11/5607 ,  H10N52/85

摘要： A semiconductor device includes ferromagnetic, magnetostrictive layer that exhibits a biaxial magnetic anisotropy and an underlying structure exhibits a spin Hall effect to provide a conversion between electrical energy and magnetic energy with more than two distinctive magnetic states, wherein the underlying structure includes a piezoelectric material structure and a spin Hall metal layer.

公开(公告)号：US11972786B2

公开(公告)日：2024-04-30

申请号：US17858596

申请日：2022-07-06

申请人： INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES

发明人： Kaiyou Wang ,  Yu Sheng

IPC分类号： G11C11/00 ,  G11C11/16 ,  G11C11/18 ,  H10N50/85 ,  H10N52/00

CPC分类号： G11C11/161 ,  G11C11/18 ,  H10N50/85 ,  H10N52/00 ,  G11C11/1695

摘要： Provided are a function switchable random access memory, including: two electromagnetic portions configured to connect a current; a magnetic recording portion between the two electromagnetic portions and including a spin-orbit coupling layer and a magnetic tunnel junction; a pinning region between each of the electromagnetic portions and the magnetic recording portion; a cut-off region on a side of each of the electromagnetic portions opposite to the pinning region, the spin-orbit coupling layer is configured to generate a spin current under an action of the current; the two electromagnetic portions is configured to generate two magnetic domains with magnetization pointing in opposite directions under an action of the spin current; the magnetic tunnel junction is configured to generate a magnetic domain wall based on the two opposite magnetic domains and is configured to drive the magnetic domain wall to reciprocate under the action of the spin current.

公开(公告)号：US11968844B2

公开(公告)日：2024-04-23

申请号：US17981469

申请日：2022-11-06

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chien-Min Lee ,  Ming-Yuan Song ,  Yen-Lin Huang ,  Shy-Jay Lin ,  Tung-Ying Lee ,  Xinyu Bao

IPC分类号： G11C11/18 ,  G11C11/16 ,  H10B61/00 ,  H10N52/00 ,  H10N52/01 ,  H10N52/80

CPC分类号： H10B61/22 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H10N52/00 ,  H10N52/01 ,  H10N52/80

摘要： Provided are a memory device and a method of forming the same. The memory device includes: a selector; a magnetic tunnel junction (MTJ) structure, disposed on the selector; a spin orbit torque (SOT) layer, disposed between the selector and the MTJ structure, wherein the SOT layer has a sidewall aligned with a sidewall of the selector; a transistor, wherein the transistor has a drain electrically coupled to the MTJ structure; a word line, electrically coupled to a gate of the transistor; a bit line, electrically coupled to the SOT layer; a first source line, electrically coupled to a source of the transistor; and a second source line, electrically coupled to the selector, wherein the transistor is configured to control a write signal flowing between the bit line and the second source line, and control a read signal flowing between the bit line and the first source line.

公开(公告)号：US20240130247A1

公开(公告)日：2024-04-18

申请号：US18397344

申请日：2023-12-27

申请人： TDK CORPORATION

发明人： Tomoyuki Sasaki

IPC分类号： H10N52/00 ,  G01R33/09 ,  G11B5/39 ,  G11C11/16 ,  G11C11/18 ,  H01F10/32 ,  H01L27/105 ,  H01L29/82 ,  H03B15/00 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85 ,  H10N52/01 ,  H10N52/80

CPC分类号： H10N52/00 ,  G01R33/098 ,  G11B5/39 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/1697 ,  G11C11/18 ,  H01F10/32 ,  H01F10/3254 ,  H01F10/329 ,  H01L27/105 ,  H01L29/82 ,  H03B15/00 ,  H03B15/006 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85 ,  H10N52/01 ,  H10N52/80 ,  H01F10/3286

摘要： This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

公开(公告)号：US20230352072A1

公开(公告)日：2023-11-02

申请号：US17964373

申请日：2022-10-12

申请人： Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

发明人： Kwangseok KIM ,  Je-Geun PARK ,  Kaixuan ZHANG ,  Jingyuan CUI

IPC分类号： G11C11/18 ,  H01L43/06 ,  G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/04 ,  H01L43/10

CPC分类号： G11C11/18 ,  H01L43/065 ,  G11C11/161 ,  H01L27/222 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/04 ,  H01L43/10

摘要： Provided are a magnetic memory using a spin current, an operating method thereof, and/or an electronic apparatus including the magnetic memory. The magnetic memory includes, first and second wirings spaced apart from each other and intersecting each other, and a data storage layer between the first and second wirings. The data storage layer includes a pinned layer with a fixed magnetic moment, a free layer spaced apart from the pinned layer and not having a fixed magnetic moment, and an insulating tunnel barrier layer provided between the pinned layer and the free layer. Among the first and second wirings, the wiring contacting the free layer includes a conductive wiring having no spin Hall effect, and the free layer includes a two-dimensional material which at room temperature has a spin Hall effect, magnetic properties, and metal properties. The two-dimensional material includes a two-dimensional van der Waals material.

公开(公告)号：US11756600B2

公开(公告)日：2023-09-12

申请号：US17288036

申请日：2019-02-06

申请人： TDK CORPORATION

发明人： Yohei Shiokawa

IPC分类号： G11C11/16 ,  H10N52/80 ,  G11C11/18 ,  H01F10/32 ,  H10N50/10 ,  H10N50/85 ,  H10B61/00

CPC分类号： G11C11/161 ,  G11C11/1675 ,  G11C11/18 ,  H01F10/329 ,  H10N50/10 ,  H10N50/85 ,  H10N52/80 ,  H10B61/00

摘要： A spin-orbit torque magnetization rotational element includes a first ferromagnetic layer and a spin-orbit torque wiring facing the first ferromagnetic layer and extending in a first direction. The spin-orbit torque wiring has a plurality of atomic planes in which atoms are arranged and the plurality of atomic planes have reference surfaces in which the same atoms are arranged and a buckling surface having a buckling part. The buckling surface has a plurality of first atoms forming a main surface substantially parallel to the reference surfaces and one or more second atoms forming a buckling part bent toward the main surface.

公开(公告)号：US20230148297A1

公开(公告)日：2023-05-11

申请号：US17645215

申请日：2021-12-20

申请人： SHAN DONG UNIVERSITY

发明人： Shishen Yan ,  Yufeng Tian ,  Lihui Bai ,  Yibo Fan ,  Xiang Han

IPC分类号： G11C11/16 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  G11C11/18 ,  G11C11/56 ,  H01F10/32 ,  H03K19/18

CPC分类号： G11C11/161 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  G11C11/1675 ,  G11C11/18 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3268 ,  H03K19/18 ,  H03K19/20

摘要： The present invention relates to a kind of magnetic heterojunction structure and the method of controlling and achieving spin logic and multiple-state storage functions. The said single magnetic heterojunction structure comprises the substrate, in-plane anti-ferromagnetic layer, in-plane ferromagnetic layer, nonmagnetic layer, vertical ferromagnetic layer, and vertical anti-ferromagnetic layer respectively from the bottom up; the said in-plane ferromagnetic layer and the said vertical ferromagnetic layer are coupled together through the said nonmagnetic layer in the middle; in-plane exchange biases, namely exchange biases in the plane, exist between the said in-plane ferromagnetic layer and the said in-plane anti-ferromagnetic layer, and out-of-plane exchange biases, namely exchange biases out of the plane, exist between the said vertical ferromagnetic layer and the said vertical anti-ferromagnetic layer.

公开(公告)号：US11637237B2

公开(公告)日：2023-04-25

申请号：US17715477

申请日：2022-04-07

申请人： TDK CORPORATION

发明人： Tomoyuki Sasaki

IPC分类号： G11C11/16 ,  H01L43/06 ,  H01L43/08 ,  H03B15/00 ,  G11B5/39 ,  H01L29/82 ,  H01L27/105 ,  H01F10/32 ,  G11C11/18 ,  H01L43/04 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/14 ,  G01R33/09

摘要： This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

公开(公告)号：US11631804B2

公开(公告)日：2023-04-18

申请号：US16969771

申请日：2019-02-13

申请人： TOHOKU UNIVERSITY

发明人： Yoshiaki Saito ,  Shoji Ikeda ,  Hideo Sato ,  Tetsuo Endoh

IPC分类号： H01L43/04 ,  G11C11/16 ,  G11C11/18 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  H01F10/32

摘要： A perpendicular magnetization type three-terminal SOT-MRAM that does not need an external magnetic field is provided. A magnetoresistance effect element where a first magnetic layer/nonmagnetic spacer layer/recording layer are disposed in order, and the first magnetic layer and the nonmagnetic spacer layer are provided to a channel layer.

公开(公告)号：US20230086181A1

公开(公告)日：2023-03-23

申请号：US17483755

申请日：2021-09-23

申请人： International Business Machines Corporation

发明人： Julien Frougier ,  Dimitri Houssameddine ,  Ruilong Xie ,  Kangguo Cheng ,  Michael Rizzolo

IPC分类号： G11C11/16 ,  G11C11/18 ,  H01L43/08 ,  H01L43/04 ,  H01L43/10 ,  H01L43/14 ,  H01L27/22 ,  H01F10/32

摘要： A cross-point SOT-MRAM cell includes: a first SHE write line; a second SHE write line non-colinear to the first SHE write line; a cross-point free layer comprising a first free layer, a second free layer, and a dielectric layer disposed between the first and the second free layers, the cross-point free layer configured to store a magnetic bit and located between and in contact with both the first SHE write line and the second SHE write line; and a remote sensing MTJ located in a vicinity of the cross-point free layer, wherein a free layer sensor of the remote sensing MTJ is in contact with one of the first SHE write line and the second SHE write line.