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1.发明公开公开(公告)号：US20240274177A1
公开(公告)日：2024-08-15
申请号：US18440928
申请日：2024-02-13
发明人： Xiufeng HAN , Leina JIANG , Wenqing HE , Tianyi ZHANG
CPC分类号： G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3286 , H10B61/20 , H10N50/10 , H10N50/85 , H10N52/85
摘要： Disclosed are a magnon junction, magnon random access memory, microwave oscillator and detector, and electronic device. The magnon junction comprises: a first electrode layer formed by non-magnetic conductive material; a free magnetic layer arranged on the first electrode layer, formed by ferromagnetic conductive material; an antiferromagnetic barrier layer arranged on the free magnetic layer, formed by antiferromagnetic insulator material; a reference magnetic layer arranged on the antiferromagnetic barrier layer, formed by ferromagnetic conductive material; and a second electrode layer arranged on the reference magnetic layer, formed by non-magnetic conductive material. The reference magnetic layer has perpendicular magnetic anisotropy or perpendicular magnetic moment component, moment direction of which is fixed along a vertical direction; the free magnetic layer has perpendicular magnetic anisotropy or a perpendicular magnetic moment component, moment direction of which is flippable along the perpendicular direction; the antiferromagnetic barrier layer has perpendicular magnetic anisotropy or perpendicular magnetic moment component.
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2.发明公开公开(公告)号：US20230397504A1
公开(公告)日：2023-12-07
申请号：US18249805
申请日：2021-05-17
发明人： Guozhong Xing , Di Wang , Ming Liu
CPC分类号： H10N52/101 , H10N52/85 , H10N59/00 , G06N3/063
摘要： Provided is an all-electrically-controlled spintronic neuron device, a neuron circuit and a neural network. The neuron device includes: a bottom antiferromagnetic pinning layer; a synthetic antiferromagnetic layer formed on the bottom antiferromagnetic pinning layer; a potential barrier layer formed on the ferromagnetic free layer, wherein a region of the ferromagnetic free layer directly opposite to the potential barrier layer forms a threshold region; a ferromagnetic reference layer formed on the potential barrier layer; wherein the potential barrier layer, the ferromagnetic reference layer and the ferromagnetic free layer form a magnetic tunnel junction; a first antiferromagnetic pinning layer and a second antiferromagnetic pinning layer formed on an exposed region of the ferromagnetic free layer except the region directly opposite the potential barrier layer, and located on two sides of the potential barrier layer; and a first electrode formed on the ferromagnetic reference layer.
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公开(公告)号：US20230276637A1
公开(公告)日：2023-08-31
申请号：US18003038
申请日：2020-06-24
发明人： Guozhong Xing , Huai Lin , Ming Liu
摘要： Provided are a spin orbit torque magnetic random access memory cell, a memory array and a memory, wherein the spin orbit torque magnetic random access memory cell includes: a magnetic tunnel and a selector; the selector is a two-dimensional material based selector; the magnetic tunnel junction is arranged above or below the selector; the magnetic tunnel junction includes an antiferromagnetic layer and a free layer; the free layer is adjacent to the antiferromagnetic layer; when the selector is turned on, the memory cell is conducted, a current generates a spin current which is injected into the free layer, and a magnetization direction of the free layer is switched by the exchange bias effect between the free layer and the antiferromagnetic layer. A deterministic magnetization switching of SOT-MRAM memory cell under zero magnetic field at room temperature may be implemented without an external magnetic field by using the exchange bias effect and applying an optimized bias voltage of the magnetic tunnel junction, so as to achieve a purpose of data writing and implement SOT-MRAM memory cell with double terminal structure.
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公开(公告)号：US20240339255A1
公开(公告)日：2024-10-10
申请号：US18744960
申请日：2024-06-17
申请人： TDK CORPORATION
发明人： Kazuumi INUBUSHI , Tomoyuki SASAKI
CPC分类号： H01F10/329 , G01R33/091 , G01R33/093 , G01R33/098 , G11B5/39 , G11B2005/3996 , H03H2001/0057 , H03H7/06 , H10B61/00 , H10N52/85
摘要： This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer contains at least partially crystallized Heusler alloy containing Co. The non-magnetic layer has a first non-magnetic region and a second non-magnetic region. Each of the second non-magnetic region is sandwiched between the first non-magnetic regions in a thickness direction of the non-magnetic layer. Atoms or molecules constituting each of the second non-magnetic regions are smaller than atoms or molecules constituting the first non-magnetic region. Each crystal structure of the second non-magnetic region is a NaCl type structure. At least a part of the second non-magnetic region is crystallized continuously with the first non-magnetic region and the first ferromagnetic layer or the second ferromagnetic layer.
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5.发明公开公开(公告)号：US20240032443A1
公开(公告)日：2024-01-25
申请号：US18154986
申请日：2023-01-16
发明人： Ji-Sung Lee , Joon-Hyun Kwon , Su-Jung Noh , Han-Saem Lee , Dae-Kyu Koh , Byong-Guk Park , Jaimin Kang , Soogil Lee
摘要： An embodiment magnetic memory device based on perpendicular exchange bias includes a non-magnetic layer, a ferromagnetic layer bonded on the non-magnetic layer, wherein a magnetization direction of the ferromagnetic layer is randomly distributed, and an anti-ferromagnetic layer bonded on the ferromagnetic layer. An embodiment method of manufacturing a magnetic memory device includes preparing the magnetic memory device based on perpendicular exchange bias, the preparing including bonding a ferromagnetic layer on a non-magnetic layer and bonding an anti-ferromagnetic layer on the ferromagnetic layer, and demagnetizing the ferromagnetic layer of the magnetic memory device, wherein a magnetization direction of the ferromagnetic layer is randomly distributed.
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公开(公告)号：US11882706B2
公开(公告)日：2024-01-23
申请号：US17354541
申请日：2021-06-22
发明人： Lei Wan , Tsai-Wei Wu , Jordan A. Katine
CPC分类号： H10B61/10 , H10B61/00 , H10B63/20 , H10B63/24 , H10N50/01 , H10N52/01 , H10N52/85 , H10N50/85
摘要： A memory array is provided that includes a plurality of word lines and a plurality of bit lines, and a plurality of memory cells each including a corresponding magnetic memory element coupled in series with a corresponding selector element. Each memory cell is coupled between one of the word lines and one of the bit lines. Each memory cell has a half-pitch F, and comprises an area between 2F2 and 4F2.
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公开(公告)号：US20230147268A1
公开(公告)日：2023-05-11
申请号：US17899868
申请日：2022-08-31
申请人： TOHOKU UNIVERSITY
发明人： Tetsuo ENDOH , Hiroshi NAGANUMA
摘要： A magnetoresistive effect element includes a reference layer, a barrier layer, a recording layer, and a channel layer that are disposed on top of one another, and a first terminal connected to the reference layer, and a second terminal and a third terminal connected to the channel layer. The channel layer includes a first channel layer and a second channel layer, the first channel layer has electrical resistance larger than electrical resistance of the second channel layer, the second terminal is connected to the first channel layer, and the third terminal is connected to the second channel layer, a write current flows between the second terminal and the third terminal via the first channel layer and the second channel layer, and a read current flows between the first terminal and the third terminal.
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公开(公告)号：US20240324473A1
公开(公告)日：2024-09-26
申请号：US18126127
申请日：2023-03-24
发明人： Jonathan Zanhong Sun
摘要： A memory structure including a chiral spin-current supply structure is provided. The chiral spin-current supply structure includes an inner core composed of a spin-collector material, a spin-conducting insulating layer surrounding the inner core, and a charge-current conducting spin-orbit spin-current generating layer surrounding the spin-conducting insulating layer. A magnetic tunnel junction structure is in contact with a horizontal surface of the inner core of the chiral spin-current supply structure.
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公开(公告)号：US20240296878A1
公开(公告)日：2024-09-05
申请号：US18662053
申请日：2024-05-13
发明人： Rahul MISHRA , Hyunsoo YANG , Ung Hwan PI
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1673 , H10B61/20 , H10N50/10 , H10N50/80 , H10N50/85 , H10N52/80 , H10N52/85 , G11C11/1655
摘要： A semiconductor memory device may be provided. The semiconductor memory device may include data storage patterns having respective first sides and respective second sides, a spin-orbit coupling (SOC) channel layer in common contact with the first sides of the data storage patterns, the SOC channel layer is configured to provide a spin-orbit torque to the data storage patterns, read access transistors connected between the second sides of respective ones of the data storage patterns and respective data lines, a write access transistor connected between a first end of the SOC channel layer and a source line, and a bit line connected to a second end of the SOC channel layer. Each of the data storage patterns comprises a free layer in contact with the SOC channel layer and an oxygen reservoir layer in contact with the free layer.
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公开(公告)号：US12040115B1
公开(公告)日：2024-07-16
申请号：US18106683
申请日：2023-02-07
申请人： TDK CORPORATION
发明人： Kazuumi Inubushi , Tomoyuki Sasaki
CPC分类号： H01F10/329 , G01R33/091 , G01R33/093 , G01R33/098 , G11B5/39 , G11B2005/3996 , H03H2001/0057 , H03H7/06 , H10B61/00 , H10N52/85
摘要： This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer. The non-magnetic layer is between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer contains at least partially crystallized Heusler alloy containing Co. The non-magnetic layer has a first non-magnetic region and a second non-magnetic region. Each of the second non-magnetic region is sandwiched between the first non-magnetic regions in a thickness direction of the non-magnetic layer. Atoms or molecules constituting each of the second non-magnetic regions are smaller than atoms or molecules constituting the first non-magnetic region. Each crystal structure of the second non-magnetic region is a NaCl type structure. At least a part of the second non-magnetic region is crystallized continuously with the first non-magnetic region and the first ferromagnetic layer or the second ferromagnetic layer.
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