知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

73 条记录 (耗时 0.021 秒)

    Magnetoresistive effect element and magnetic memory
    3.
    发明授权
    Magnetoresistive effect element and magnetic memory 有权

    公开(公告)号：US11489109B2

    公开(公告)日：2022-11-01

    申请号：US16952274

    申请日：2020-11-19

    申请人： TDK CORPORATION

    发明人： Yohei Shiokawa ,  Minoru Ota ,  Tomoyuki Sasaki ,  Yoshitomo Tanaka

    IPC分类号： H01L43/10 ,  G01R33/09 ,  G11C11/16 ,  H01L43/08 ,  H01F10/32 ,  H01L27/22 ,  G11C13/00

    摘要： A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization free layer includes a first free layer and a second free layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first free layer and the second free layer. The first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co and Ni.

    Magnetoresistance effect element and magnetic memory
    4.
    发明授权
    Magnetoresistance effect element and magnetic memory 有权

    公开(公告)号：US11264071B2

    公开(公告)日：2022-03-01

    申请号：US16912832

    申请日：2020-06-26

    申请人： TDK CORPORATION

    发明人： Yohei Shiokawa

    IPC分类号： G11C11/00 ,  G11C11/16 ,  H01L43/08 ,  G01R33/09 ,  H01L43/04 ,  H01L27/22 ,  H01L43/10

    摘要： A magnetoresistance effect element where asymmetry of an inversion current due to a leakage magnetic field from a magnetization fixed layer is decreased. A magnetoresistance effect element includes a first ferromagnetic layer whose magnetization direction is variable, a second ferromagnetic layer whose magnetization direction is fixed, and a nonmagnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer which are laminated in a first direction which is a lamination direction, where both the first ferromagnetic layer and the second ferromagnetic layer are curved so that central portions of the first and second ferromagnetic layers protrude with respect to outer circumferential portions in the first direction, and protruding directions of the central portions are opposite to each other so that a distance between the outer circumferential portions is larger than a distance between the central portions in the first direction.

    Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory
    5.
    发明授权
    Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory 有权

    公开(公告)号：US11250897B2

    公开(公告)日：2022-02-15

    申请号：US16953851

    申请日：2020-11-20

    申请人： TDK CORPORATION

    发明人： Yohei Shiokawa ,  Tomoyuki Sasaki

    IPC分类号： G11C11/16 ,  H01L43/04 ,  H01L43/10 ,  H01L21/8239 ,  H01L29/82 ,  H01L43/08 ,  H01L27/105 ,  H01L27/22

    摘要： Provided is a spin current magnetization rotational element, including: a first ferromagnetic metal layer for a magnetization direction to be changed; and a spin-orbit torque wiring which extends in a second direction intersecting a first direction that is a plane-orthogonal direction of the first ferromagnetic metal layer, the first ferromagnetic metal layer being located on one surface of the spin-orbit torque wiring, wherein the spin-orbit torque wiring has a structure in which a spin conduction layer and an interfacial spin generation layer are alternately laminated in the first direction, a number of a plurality of the interfacial spin generation layers is two or more, and at least one of the plurality of the interfacial spin generation layer is made of a compound.

    Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory
    8.
    发明授权
    Spin current magnetization reversal element, magnetoresistance effect element, and magnetic memory 有权

    公开(公告)号：US10522742B2

    公开(公告)日：2019-12-31

    申请号：US15778577

    申请日：2016-11-25

    申请人： TDK CORPORATION

    发明人： Yohei Shiokawa ,  Tomoyuki Sasaki

    IPC分类号： H01L43/08 ,  H01L43/06 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/14 ,  G01R33/09 ,  H03B15/00

    摘要： A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction; and a spin-orbit torque wiring, wherein a first direction is perpendicular to a surface of the layer, the wiring extends in a second direction intersecting the first and is bonded to the layer, wherein the wiring material is a binary alloy represented by the formula AxB1-x, a metal carbide, or metal nitride, wherein A is selected from Al, Ti, and Pt, and B is selected from Al, Cr, Mn, Fe, Co, Ni, Y, Ru, Rh, and Ir and the material has a cubic structure with symmetry of a space group Pm-3m or Fd-3m; or A is selected from Al, Si, Ti, Y, and Ta, and B is selected from C, N, Co, Pt, Au, and Bi and the material has a cubic structure with symmetry of a space group Fm-3m.

    Spin current magnetization rotational element
    9.
    发明授权
    Spin current magnetization rotational element 有权

    公开(公告)号：US10454023B2

    公开(公告)日：2019-10-22

    申请号：US15976997

    申请日：2018-05-11

    申请人： TDK CORPORATION

    发明人： Zhenyao Tang ,  Yohei Shiokawa ,  Tomoyuki Sasaki

    IPC分类号： H01L43/02 ,  H01F10/32 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22

    摘要： A spin current magnetization rotational element includes: a ferromagnetic metal layer; a spin-orbit torque wiring configured to extend in a first direction perpendicular to a lamination direction of the ferromagnetic metal layer and formed on one surface of the ferromagnetic metal layer; and a ferromagnetic electrode layer formed outside the ferromagnetic metal layer on any of surfaces of the spin-orbit torque wiring in a top view from the lamination direction. A direction of magnetization of the ferromagnetic metal layer is changeable by spin-orbit torque generated by a spin-orbit interaction in the spin-orbit torque wiring and an influence of spin diffused from the ferromagnetic electrode layer.

    Spin-orbit torque magnetization rotational element, spin-orbit torque magnetoresistance effect element, magnetic memory, and reservoir element
    10.
    发明授权
    Spin-orbit torque magnetization rotational element, spin-orbit torque magnetoresistance effect element, magnetic memory, and reservoir element 有权

    公开(公告)号：US11832531B2

    公开(公告)日：2023-11-28

    申请号：US17296896

    申请日：2019-01-31

    申请人： TDK CORPORATION

    发明人： Tomoyuki Sasaki ,  Yohei Shiokawa

    IPC分类号： H10N52/80 ,  H10B61/00 ,  H10N52/00 ,  H10N52/01

    CPC分类号： H10N52/80 ,  H10B61/00 ,  H10N52/101 ,  H10N52/01

    摘要： A spin-orbit torque magnetization rotational element includes: a first insulating layer with first and second openings; a first conductive portion formed inside the first opening; a second conductive portion formed inside the second opening; a spin-orbit torque wiring located in a first direction and extends in a second direction over the first and second conductive portions; and a first ferromagnetic layer located on the side opposite to the first insulating layer in the spin-orbit torque wiring, wherein the first conductive portion includes a first surface facing the spin-orbit torque wiring, a second surface facing the first surface and is located at a position farther from the spin-orbit torque wiring than the first surface, and a side surface connecting the first surface and the second surface, and the side surface includes a continuous major surface and a third surface inclined or curved and is discontinuous with respect to the major surface.