- 专利标题: Spin-orbit torque magnetization rotational element, spin-orbit torque magnetoresistive effect element, and magnetic memory
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申请号: US17288036申请日: 2019-02-06
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公开(公告)号: US11756600B2公开(公告)日: 2023-09-12
- 发明人: Yohei Shiokawa
- 申请人: TDK CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: TDK CORPORATION
- 当前专利权人: TDK CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff PLC
- 国际申请: PCT/JP2019/004180 2019.02.06
- 国际公布: WO2020/161814A 2020.08.13
- 进入国家日期: 2021-04-23
- 主分类号: G11C11/16
- IPC分类号: G11C11/16 ; H10N52/80 ; G11C11/18 ; H01F10/32 ; H10N50/10 ; H10N50/85 ; H10B61/00
摘要:
A spin-orbit torque magnetization rotational element includes a first ferromagnetic layer and a spin-orbit torque wiring facing the first ferromagnetic layer and extending in a first direction. The spin-orbit torque wiring has a plurality of atomic planes in which atoms are arranged and the plurality of atomic planes have reference surfaces in which the same atoms are arranged and a buckling surface having a buckling part. The buckling surface has a plurality of first atoms forming a main surface substantially parallel to the reference surfaces and one or more second atoms forming a buckling part bent toward the main surface.
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