公开(公告)号：US11764157B2

公开(公告)日：2023-09-19

申请号：US17383361

申请日：2021-07-22

Applicant: Applied Materials, Inc.

Inventor： Wenjing Xu ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen ,  Zhiyuan Wu

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76849 ,  H01L23/5226

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

公开(公告)号：US20220344275A1

公开(公告)日：2022-10-27

申请号：US17858274

申请日：2022-07-06

Applicant: Applied Materials, Inc.

Inventor： Wenjing Xu ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen ,  Zhiyuan Wu

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

公开(公告)号：US20220028795A1

公开(公告)日：2022-01-27

申请号：US17383361

申请日：2021-07-22

Applicant: Applied Materials, Inc.

Inventor： Wenjing Xu ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen ,  Zhiyuan Wu

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768

Abstract: Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

公开(公告)号：US20220028793A1

公开(公告)日：2022-01-27

申请号：US17498247

申请日：2021-10-11

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Sang-Hyeob Lee ,  Chris Pabelico ,  Yi Xu ,  Tae Hong Ha ,  Xianmin Tang ,  Jin Hee Park

IPC: H01L23/532 ,  H01L21/768

Abstract: Apparatuses and methods to provide electronic devices having metal films are provided. Some embodiments of the disclosure utilize a metallic tungsten layer as a liner that is filled with a metal film comprising cobalt. The metallic tungsten layer has good adhesion to the cobalt leading to enhanced cobalt gap-fill performance.

公开(公告)号：US10002834B2

公开(公告)日：2018-06-19

申请号：US14711135

申请日：2015-05-13

Applicant: Applied Materials, Inc.

Inventor： Mehul B. Naik ,  Paul F. Ma ,  Tae Hong Ha ,  Srinivas Guggilla

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/285

CPC classification number: H01L23/53238 ,  H01L21/28556 ,  H01L21/76846

Abstract: A method and apparatus for forming an interconnect on a substrate is provided. A protective layer is formed on the substrate and in a via formed on the substrate wherein the protective layer is resistant to a halogen containing material. A barrier layer is formed on top of the protective layer. The barrier layer comprises a halogen containing material. A metal layer is deposited over the barrier layer. In another embodiment, the protective layer is selectively deposited in the via.

公开(公告)号：US09677172B2

公开(公告)日：2017-06-13

申请号：US14601685

申请日：2015-01-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Tae Hong Ha ,  Wei Lei ,  Kie Jin Park

IPC: C23C16/04 ,  C23C16/56 ,  C23C28/02 ,  C23C16/16 ,  C23C16/02 ,  C23C16/455

CPC classification number: C23C16/045 ,  C23C16/0281 ,  C23C16/16 ,  C23C16/45523 ,  C23C16/56 ,  C23C28/021 ,  C23C28/023

Abstract: Methods for forming a liner layer are provided herein. In some embodiments, a method of forming a liner layer on a substrate disposed in a process chamber, the substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method includes exposing the substrate to a cobalt precursor gas and to a ruthenium precursor gas to form a cobalt-ruthenium liner layer on the first surface of the substrate and on the sidewall and bottom surface of the opening.

公开(公告)号：US11948836B2

公开(公告)日：2024-04-02

申请号：US17498247

申请日：2021-10-11

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Sang-Hyeob Lee ,  Chris Pabelico ,  Yi Xu ,  Tae Hong Ha ,  Xianmin Tang ,  Jin Hee Park

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L21/76843 ,  H01L21/02175 ,  H01L21/02205 ,  H01L21/76831 ,  H01L21/76837 ,  H01L21/76876 ,  H01L21/76877

Abstract: Apparatuses and methods to provide electronic devices having metal films are provided. Some embodiments of the disclosure utilize a metallic tungsten layer as a liner that is filled with a metal film comprising cobalt. The metallic tungsten layer has good adhesion to the cobalt leading to enhanced cobalt gap-fill performance.

公开(公告)号：US20210366722A1

公开(公告)日：2021-11-25

申请号：US16881145

申请日：2020-05-22

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Xuesong Lu ,  Tae Hong Ha ,  Xianmin Tang ,  Andrew Nguyen ,  Tza-Jing Gung ,  Philip A. Kraus ,  Chung Nang Liu ,  Hui Sun ,  Yufei Hu

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  H01L21/683 ,  H01L21/3105 ,  H01L21/67 ,  H01L21/8234

Abstract: Described is a process to clean up junction interfaces for fabricating semiconductor devices involving forming low-resistance electrical connections between vertically separated regions. An etch can be performed to remove silicon oxide on silicon surface at the bottom of a recessed feature. Described are methods and apparatus for etching up the bottom oxide of a hole or trench while minimizing the effects to the underlying epitaxial layer and to the dielectric layers on the field and the corners of metal gate structures. The method for etching features involves a reaction chamber equipped with a combination of capacitively coupled plasma and inductive coupled plasma. CHxFy gases and plasma are used to form protection layer, which enables the selectively etching of bottom silicon dioxide by NH3—NF3 plasma. Ideally, silicon oxide on EPI is removed to ensure low-resistance electric contact while the epitaxial layer and field/corner dielectric layers are—etched only minimally or not at all.

公开(公告)号：US20210351072A1

公开(公告)日：2021-11-11

申请号：US16867990

申请日：2020-05-06

Applicant: Applied Materials, Inc.

Inventor： Lu Chen ,  Christina L. Engler ,  Gang Shen ,  Feng Chen ,  Tae Hong Ha ,  Xianmin Tang

IPC: H01L21/768

Abstract: Described are methods for doping barrier layers such as tantalum (Ta), tantalum nitride (TaN), tantalum carbide (TaC), niobium (Nb), niobium nitride (NbN), manganese (Mn), manganese nitride (MnN), titanium (Ti), titanium nitride (TiN), molybdenum (Mo), and molybdenum nitride (MoN), and the like. Dopants may include one or more of one or more of ruthenium (Ru), manganese (Mn), niobium (Nb), cobalt (Co), vanadium (V), copper (Cu), aluminum (Al), carbon (C), oxygen (O), silicon (Si), molybdenum (Mo), and the like. The doped barrier layer provides improved adhesion at a thickness of less than about 15 Å.

公开(公告)号：US11171046B2

公开(公告)日：2021-11-09

申请号：US16837365

申请日：2020-04-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Feng Chen ,  Yufei Hu ,  Wenjing Xu ,  Gang Shen ,  Zhiyuan Wu ,  Tae Hong Ha

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/285 ,  H01L23/522

Abstract: Methods and apparatus for forming an interconnect structure, the method including selectively depositing two or more capping layers atop a top surface of a via within a low-k dielectric layer, wherein the two or more capping layers include a first layer of ruthenium and a second layer of cobalt.