Invention Grant
- Patent Title: Ruthenium liner and cap for back-end-of-line applications
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Application No.: US17383361Application Date: 2021-07-22
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Publication No.: US11764157B2Publication Date: 2023-09-19
- Inventor: Wenjing Xu , Feng Chen , Tae Hong Ha , Xianmin Tang , Lu Chen , Zhiyuan Wu
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/522 ; H01L21/768
Abstract:
Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.
Public/Granted literature
- US20220028795A1 RUTHENIUM LINER AND CAP FOR BACK-END-OF-LINE APPLICATIONS Public/Granted day:2022-01-27
Information query
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