公开(公告)号：US12291779B2

公开(公告)日：2025-05-06

申请号：US18380803

申请日：2023-10-17

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Tobin Kaufman-Osborn ,  Kurt Fredrickson ,  Thomas Knisley ,  Liqi Wu

IPC: C23C16/455 ,  H01L21/02

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

公开(公告)号：US12261049B2

公开(公告)日：2025-03-25

申请号：US17836562

申请日：2022-06-09

Applicant: APPLIED MATERIALS, INC.

Inventor： David Thompson ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lisa Enman ,  Aaron Dangerfield ,  Jesus Candelario Mendoza ,  Jeffrey W. Anthis ,  Lakmal Kalutarage

IPC: H01L21/306 ,  H01L21/02 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213

Abstract: Described herein is a method for selectively cleaning and/or etching a sample. The method includes selectively forming a film in a trench of a substrate such that the trench may be selectively etched. A polymer film is deposited on the bottom surface of the trench without being deposited on the side wall. A second film is selectively formed in the trench without forming the second film on the polymer film. The polymer is then removed from the bottom surface of the trench and then etching is performed on the bottom surface of the trench using an etch chemistry, wherein the second film protects the side wall from being etched.

公开(公告)号：US12142477B2

公开(公告)日：2024-11-12

申请号：US18134802

申请日：2023-04-14

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Michael Haverty ,  Muthukumar Kaliappan ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong ,  Yingqian Chen

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455

Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

公开(公告)号：US12131900B2

公开(公告)日：2024-10-29

申请号：US17873793

申请日：2022-07-26

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lakmal C. Kalutarage ,  Thomas Joseph Knisley

IPC: C23C16/00 ,  C23C16/02 ,  C23C16/30 ,  C23C16/455 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0217 ,  C23C16/0245 ,  C23C16/308 ,  C23C16/45525 ,  H01L21/02118 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/31138

Abstract: Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.

公开(公告)号：US12094766B2

公开(公告)日：2024-09-17

申请号：US17971212

申请日：2022-10-21

Applicant: Applied Materials, Inc.

Inventor： Michael L. McSwiney ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Drew Phillips ,  Aaron Dangerfield ,  David Thompson ,  Kevin Kashefi ,  Xiangjin Xie

IPC: H01L21/768 ,  B05D1/00 ,  H01L21/02

CPC classification number: H01L21/76829 ,  B05D1/60 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/76846 ,  H01L21/76877

Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, hydroxyl, aldehyde, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

公开(公告)号：US20240297073A1

公开(公告)日：2024-09-05

申请号：US18117203

申请日：2023-03-03

Applicant: Applied Materials, Inc.

Inventor： Muthukumar Kaliappan ,  Bhaskar Jyoti Bhuyan ,  Yong Jin Kim ,  Carmen Leal Cervantes ,  Xiangjin Xie ,  Jesus Candelario Mendoza-Gutierrez ,  Aaron Dangerfield ,  Michael Haverty ,  Mark Saly ,  Kevin Kashefi

IPC: H01L21/768

CPC classification number: H01L21/76843 ,  H01L21/76831 ,  H01L21/76877

Abstract: Methods of forming semiconductor devices by enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a barrier layer. The methods include exposing a substrate with a metal surface, a dielectric surface and an aluminum oxide surface or an aluminum nitride surface to a blocking molecule to form the blocking layer selectively on the metal surface over the dielectric surface and one of the aluminum oxide surface or the aluminum nitride surface.

公开(公告)号：US12068170B2

公开(公告)日：2024-08-20

申请号：US18198743

申请日：2023-05-17

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Madhur Sachan ,  Regina Freed

IPC: H01L21/3213 ,  C23F4/02 ,  G03F7/004 ,  G03F7/26 ,  G03F7/36

CPC classification number: H01L21/32135 ,  C23F4/02 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/265 ,  G03F7/36

Abstract: Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

公开(公告)号：US20240271272A1

公开(公告)日：2024-08-15

申请号：US18635639

申请日：2024-04-15

Applicant: Applied Materials, Inc.

Inventor： Yong Wang ,  Doreen Wei Ying Yong ,  Bhaskar Jyoti Bhuyan ,  John Sudijono

IPC: C23C16/02 ,  C23C16/04 ,  C23C16/56 ,  C23C22/77 ,  C23C22/82

CPC classification number: C23C16/0227 ,  C23C16/04 ,  C23C16/56 ,  C23C22/77 ,  C23C22/82

Abstract: Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.

公开(公告)号：US12033866B2

公开(公告)日：2024-07-09

申请号：US18116556

申请日：2023-03-02

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Madhur Sachan ,  Regina Freed

IPC: H01L21/3213 ,  C23F4/02 ,  G03F7/004 ,  G03F7/26 ,  G03F7/36

CPC classification number: H01L21/32135 ,  C23F4/02 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/265 ,  G03F7/36

Abstract: Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.

公开(公告)号：US11990332B2

公开(公告)日：2024-05-21

申请号：US16637170

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Zhelin Sun ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Yijun Liu ,  Lin Yang

IPC: C23C16/455 ,  C23C16/36 ,  C23C16/56 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/02167 ,  C23C16/36 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/324

Abstract: Methods and apparatus for forming a conformal SiCON film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a low temperature steam annealing process to form a film resistant to damage by rapid thermal processing or ashing. The film is treated by rapid thermal processing and then subjected to a high temperature anneal to form a film with a low dielectric constant.