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    METHODS OF SELECTIVELY ETCHING SILICON NITRIDE
    1.
    发明申请
    METHODS OF SELECTIVELY ETCHING SILICON NITRIDE 有权

    公开(公告)号：US20250069894A1

    公开(公告)日：2025-02-27

    申请号：US18223382

    申请日：2023-07-18

    Applicant: Applied Materials Inc.

    Inventor： Doreen Wei Ying Yong ,  Tuck Foong Koh ,  Mikhail Korolik ,  John Sudijono ,  Paul E. Gee

    IPC: H01L21/311

    Abstract: Embodiments of the present disclosure are directed to selective etching processes. The processes include flowing a precursor comprising one or more of an interhalogen, a halogen-containing species, a pseudohalogen species, a mixture of one or more of the interhalogen, the halogen-containing species, or the pseudohalogen species and an amine or a phosphine, or a mixture of one or more of the interhalogen, the halogen-containing species, or the pseudohalogen species with a sulfur-containing species, into a semiconductor processing chamber containing a substrate, and forming an activated species of the precursor to etch a substrate. The substrate has a plurality of alternating layers of silicon oxide and silicon nitride thereon and a trench formed through the plurality of alternating layers. The silicon nitride layers are selectively etched relative to the silicon oxide layers at an etch selectivity of greater than or equal to 500:1.

    METHOD OF FORMING CARBON-BASED SPACER FOR EUV PHOTORESIST PATTERNS
    6.
    发明公开
    METHOD OF FORMING CARBON-BASED SPACER FOR EUV PHOTORESIST PATTERNS 审中-公开

    公开(公告)号：US20230402285A1

    公开(公告)日：2023-12-14

    申请号：US17839809

    申请日：2022-06-14

    Applicant: Applied Materials, Inc.

    Inventor： Xinke Wang ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Bhaskar Jyoti Bhuyan ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

    IPC: H01L21/033

    CPC classification number: H01L21/0337 ,  H01L21/0332

    Abstract: Methods of depositing a conformal carbon-containing spacer layer are described. Exemplary processing methods may include flowing a first precursor over a patterned surface and a substrate to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the substrate. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces. The patterned surface may be an EUV photoresist pattern, and the carbon-containing film may be formed on the sidewall and act as a spacer to reduce the critical dimension (CD). The carbon-containing film may act as an etch protection layer or an etch resistance layer for the sidewall of the nanostructures. When no etch is performed, the carbon-containing film may act as a liner material.

    METHODS OF SELECTIVELY ETCHING SILICON NITRIDE
    8.
    发明申请
    METHODS OF SELECTIVELY ETCHING SILICON NITRIDE 有权

    公开(公告)号：US20240420962A1

    公开(公告)日：2024-12-19

    申请号：US18210918

    申请日：2023-06-16

    Applicant: Applied Materials, Inc.

    Inventor： Doreen Wei Ying Yong ,  Tuck Foong Koh ,  John Sudijono ,  Mikhail Korolik ,  Paul E. Gee ,  Thai Cheng Chua ,  Philip A. Kraus

    IPC: H01L21/311 ,  H01J37/32

    Abstract: Embodiments of the present disclosure are directed to selective etching processes. The processes include an etching chemistry (a plasma of a fluorine-containing precursor and a first gas mixture), and a passivating chemistry (a plasma of a sulfur-containing precursor and a second gas mixture). In some embodiments, the sulfur-containing precursor and the second gas mixture are present in a ratio of sulfur-containing precursor to second gas mixture in a range of from 0.01 to 5. The methods include etching a substrate having a plurality of alternating layers of silicon oxide and silicon nitride thereon and a trench formed through the plurality of alternating layers. The silicon nitride layers are selectively etched relative to the silicon oxide layers at an etch selectivity of greater than or equal to 500:1.

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