公开(公告)号：US10043684B1

公开(公告)日：2018-08-07

申请号：US15425231

申请日：2017-02-06

申请人： Applied Materials, Inc.

发明人： Ranga Rao Arnepalli ,  Prerna Sonthalia Goradia ,  Robert Jan Visser ,  Nitin Ingle ,  Mikhail Korolik ,  Jayeeta Biswas ,  Saurabh Lodha

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/67 ,  H01L21/311 ,  H01L21/02

摘要： Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing a nitrogen-containing precursor into the substrate processing region. The methods may further include removing an amount of the metal-containing material.

公开(公告)号：US20170148642A1

公开(公告)日：2017-05-25

申请号：US15337781

申请日：2016-10-28

申请人： APPLIED MATERIALS, INC.

发明人： Fei Wang ,  Mikhail Korolik ,  Nitin K. Ingle ,  Anchuan Wang ,  Robert Jan Visser

IPC分类号： H01L21/311 ,  H01L21/02

CPC分类号： H01L21/31144 ,  C09D183/08 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31116

摘要： Methods of etching silicon nitride faster than silicon or silicon oxide are described. Methods of selectively depositing additional material onto the silicon nitride are also described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent exposure to an etchant or a deposition precursor may then be used to selectively remove silicon nitride or to selectively deposit additional material on the silicon nitride.

公开(公告)号：US09576809B2

公开(公告)日：2017-02-21

申请号：US14269544

申请日：2014-05-05

申请人： Applied Materials, Inc.

发明人： Mikhail Korolik ,  Nitin K. Ingle ,  Jingchun Zhang ,  Anchuan Wang ,  Jie Liu

IPC分类号： H01L21/461 ,  H01L21/3065 ,  H01J37/32

CPC分类号： H01L21/3065 ,  H01J37/32357 ,  H01J2237/3346

摘要： Methods of selectively etching silicon relative to silicon germanium are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon. The plasmas effluents react with exposed surfaces and selectively remove silicon while very slowly removing other exposed materials. The methods are useful for removing Si(1-X)GeX faster than Si(1-Y)GeY, for X

摘要翻译： 描述了相对于硅锗选择性地蚀刻硅的方法。 该方法包括使用由含氟前体和含氢前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与硅反应。 等离子体流出物与暴露的表面反应并选择性地去除硅，同时非常缓慢地除去其它暴露的材料。 对于X

公开(公告)号：US09355863B2

公开(公告)日：2016-05-31

申请号：US14828311

申请日：2015-08-17

申请人： Applied Materials, Inc.

发明人： Zhijun Chen ,  Seung Park ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC分类号： H01L21/302 ,  H01L21/311 ,  H01J37/32

CPC分类号： H01L21/31122 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244

摘要： A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride.

摘要翻译： 描述了在异质结构上蚀刻暴露的氧化钛的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物可与含氮前体（例如含有胺（N））的前体结合。 由此产生的反应物在衬底处于升高的温度下蚀刻具有高钛氧化物选择性的图案化异质结构。 替代地，氧化钛蚀刻可以包括向远程等离子体供应含氟前体和含氮和氢的前体源。 该方法可用于除去少量或不含低K电介质，多晶硅，氮化硅或氮化钛的氧化钛。

公开(公告)号：US10593553B2

公开(公告)日：2020-03-17

申请号：US16056001

申请日：2018-08-06

申请人： Applied Materials, Inc.

发明人： Mikhail Korolik ,  Nitin Ingle ,  Dimitri Kioussis

IPC分类号： H01L21/306 ,  H01L21/3065 ,  H01J37/32

摘要： Exemplary methods for etching a germanium-containing material may include forming a plasma of a fluorine-containing precursor in a remote plasma region of a semiconductor processing chamber. The methods may include flowing effluents of the fluorine-containing precursor through apertures defined in a chamber component. The apertures may be coated with a catalytic material. The methods may include reducing a concentration of fluorine radicals in the plasma effluents with the catalytic material. The methods may also include delivering the plasma effluents to a processing region of the semiconductor processing chamber. A substrate having an exposed region of a germanium-containing material may be housed within the processing region. The methods may further include etching the germanium-containing material.

公开(公告)号：US10177227B1

公开(公告)日：2019-01-08

申请号：US15687747

申请日：2017-08-28

申请人： Applied Materials, Inc.

发明人： Naomi Yoshida ,  Lin Dong ,  Shiyu Sun ,  Myungsun Kim ,  Nam Sung Kim ,  Dimitri Kioussis ,  Mikhail Korolik ,  Gaetano Santoro ,  Vanessa Pena

IPC分类号： H01L21/02 ,  H01L29/06 ,  H01L29/417 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78

摘要： The present disclosure provides methods for forming horizontal gate-all-around (hGAA) structure devices. In one example, a method includes selectively and laterally etching a first group of sidewalls of a first layer in a multi-material layer, wherein the multi-material layer comprises repeating pairs of the first layer and a second layer, the first and the second layers having the first group and a second group of sidewalls respectively, the first group of sidewalls from the first layer exposed through openings defined in the multi-material layer and a group of inner spacers formed atop of the second group of sidewalls from the second layer, forming a recess from the first group of sidewalls of the first layer and defining a vertical wall inward from an outer vertical surface of the inner spacer formed atop of the second layers, and forming an epi-silicon layer from the recess of the first layer.

公开(公告)号：US09875907B2

公开(公告)日：2018-01-23

申请号：US15235048

申请日：2016-08-11

申请人： APPLIED MATERIALS, INC.

发明人： Fei Wang ,  Mikhail Korolik ,  Nitin K. Ingle ,  Anchuan Wang ,  Robert Jan Visser

IPC分类号： H01L21/311 ,  H01L21/461 ,  H01L21/02 ,  H01L21/033 ,  H01J37/32 ,  H01L21/3105

CPC分类号： H01L21/31116 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/31144

摘要： Methods of etching silicon nitride faster than silicon oxide are described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent gas-phase etch using anhydrous vapor-phase HF may then be used to selectively remove silicon nitride much faster than silicon oxide because the SAM has been found to delay the etch and reduce the etch rate.

公开(公告)号：US09831097B2

公开(公告)日：2017-11-28

申请号：US15043955

申请日：2016-02-15

申请人： Applied Materials, Inc.

发明人： Nitin K. Ingle ,  Anchuan Wang ,  Zihui Li ,  Mikhail Korolik

IPC分类号： H01L21/3065 ,  H01L21/308

CPC分类号： H01L21/3065 ,  H01J37/32357 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32137

摘要： The present disclosure provides methods for etching a silicon material in a device structure in semiconductor applications. In one example, a method for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including HF gas without nitrogen etchants to remove a silicon material disposed on a substrate.

公开(公告)号：US20160086816A1

公开(公告)日：2016-03-24

申请号：US14543683

申请日：2014-11-17

申请人： Applied Materials, Inc.

发明人： Xikun Wang ,  Mandar Pandit ,  Zhenjiang Cui ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle ,  Jie Liu

IPC分类号： H01L21/311

CPC分类号： H01L21/31122 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139

摘要： A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a chlorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.

摘要翻译： 描述了一种去除氮化钛硬掩模的方法。 在去除之前，硬掩模位于低k电介质层之上，并且低k电介质层在去除过程之后保持相对较低的净介电常数。 低k电介质层可以是在通孔底部具有铜的双镶嵌结构的一部分。 在氮化钛硬掩模去除之前沉积无孔碳层以保护低k电介质层和铜。 使用在含氯前体的远程等离子体中形成的等离子体流出物，用气相蚀刻去除氮化钛硬掩模。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。

公开(公告)号：US20150357201A1

公开(公告)日：2015-12-10

申请号：US14828311

申请日：2015-08-17

申请人： Applied Materials, Inc.

发明人： Zhijun Chen ,  Seung Park ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC分类号： H01L21/311

CPC分类号： H01L21/31122 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244

摘要： A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride.

摘要翻译： 描述了在异质结构上蚀刻暴露的氧化钛的方法，并且包括由含氟前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物可与含氮前体（例如含有胺（N））的前体结合。 由此产生的反应物在衬底处于升高的温度下蚀刻具有高钛氧化物选择性的图案化异质结构。 替代地，氧化钛蚀刻可以包括向远程等离子体供应含氟前体和含氮和氢的前体源。 该方法可用于除去少量或不含低K电介质，多晶硅，氮化硅或氮化钛的氧化钛。