公开(公告)号：US20210043506A1

公开(公告)日：2021-02-11

申请号：US16598878

申请日：2019-10-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Roey Shaviv ,  Ismail Emesh ,  Xikun Wang

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3213

Abstract: Methods and apparatus for forming an interconnect, including: depositing a first barrier layer upon a top surface of a via and a top surface of a trench; filling the via with a first metal, wherein the first metal completely fills the via and forms a metal layer within the trench; etching the metal layer within the trench to expose dielectric sidewalls of the trench, a top surface of the via, and a dielectric bottom of the trench; depositing a second barrier layer upon the dielectric sidewalls, top surface of the via, and the dielectric bottom of the trench; and filling the trench with a second metal different than the first metal.

公开(公告)号：US10770346B2

公开(公告)日：2020-09-08

申请号：US16229710

申请日：2018-12-21

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Jianxin Lei ,  Nitin Ingle ,  Roey Shaviv

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/67 ,  H01L23/532 ,  H01L21/321

Abstract: Exemplary methods for removing cobalt material may include flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the chlorine-containing precursor to produce plasma effluents. The methods may also include contacting an exposed region of cobalt with the plasma effluents. The exposed region of cobalt may include an overhang of cobalt on a trench defined on a substrate. The plasma effluents may produce cobalt chloride at the overhang of cobalt. The methods may include flowing a nitrogen-containing precursor into the processing region of the semiconductor processing chamber. The methods may further include contacting the cobalt chloride with the nitrogen-containing precursor. The methods may also include recessing the overhang of cobalt.

公开(公告)号：US20190295826A1

公开(公告)日：2019-09-26

申请号：US16438277

申请日：2019-06-11

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Andrew Nguyen ,  Changhun Lee ,  Xiaoming He ,  Meihua Shen

IPC: H01J37/32

Abstract: In-situ low pressure chamber cleans and gas nozzle apparatus for plasma processing systems employing in-situ deposited chamber coatings. Certain chamber clean embodiments for conductor etch applications include an NF3-based plasma clean performed at pressures below 30 mT to remove in-situ deposited SiOx coatings from interior surfaces of a gas nozzle hole. Embodiments include a gas nozzle with bottom holes dimensioned sufficiently small to reduce or prevent the in-situ deposited chamber coatings from building up a SiOx deposits on interior surfaces of a nozzle hole.

公开(公告)号：US09607856B2

公开(公告)日：2017-03-28

申请号：US14720183

申请日：2015-05-22

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Anchuan Wang ,  Nitin K. Ingle ,  Dmitry Lubomirsky

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/28 ,  H01L21/48 ,  H01J37/32

CPC classification number: H01L21/32136 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/02068 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/4814

Abstract: Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and/or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer.

公开(公告)号：US20170018439A1

公开(公告)日：2017-01-19

申请号：US14801542

申请日：2015-07-16

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  David Cui ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/32138 ,  H01J37/32449 ,  H01L21/02071 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/7684

Abstract: Methods are described for etching metal layers that are difficult to volatize, such as cobalt, nickel, and platinum to form an etched metal layer with reduced surface roughness. The methods include pretreating the metal layer with a local plasma formed from a hydrogen-containing precursor. The pretreated metal layer is then reacted with a halogen-containing precursor to form a halogenated metal layer having a halogenated etch product. A carbon-and-nitrogen-containing precursor reacts with the halogenated etch product to form a volatile etch product that can be removed in the gas phase from the etched surface of the metal layer. The surface roughness may be reduced by performing one or more plasma treatments on the etching metal layer after a plurality of etching sequences. Surface roughness is also reduced by controlling the temperature and length of time the metal layer is reacting with the etchant precursors.

Abstract translation: 描述了用于蚀刻难以挥发的金属层（例如钴，镍和铂）以形成具有降低的表面粗糙度的蚀刻金属层的方法。 所述方法包括用由含氢前体形成的局部等离子体预处理金属层。 然后将预处理的金属层与含卤素的前体反应以形成具有卤化蚀刻产物的卤化金属层。 含氮和氮的前体与卤化蚀刻产物反应以形成挥发性蚀刻产物，其可以在气相中从金属层的蚀刻表面除去。 通过在多个蚀刻顺序之后对蚀刻金属层进行一次或多次等离子体处理，可以减少表面粗糙度。 通过控制金属层与蚀刻剂前体反应的时间的温度和长度也可以减少表面粗糙度。

公开(公告)号：US09478434B2

公开(公告)日：2016-10-25

申请号：US14543683

申请日：2014-11-17

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Mandar Pandit ,  Zhenjiang Cui ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle ,  Jie Liu

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311

CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139

Abstract: A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a chlorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.

Abstract translation: 描述了一种去除氮化钛硬掩模的方法。 在去除之前，硬掩模位于低k电介质层之上，并且低k电介质层在除去过程之后保持相对较低的净介电常数。 低k电介质层可以是在通孔底部具有铜的双镶嵌结构的一部分。 在氮化钛硬掩模去除之前沉积无孔碳层以保护低k电介质层和铜。 使用在含氯前体的远程等离子体中形成的等离子体流出物，用气相蚀刻去除氮化钛硬掩模。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。

公开(公告)号：US09472417B2

公开(公告)日：2016-10-18

申请号：US14513517

申请日：2014-10-14

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Jessica Sevanne Kachian ,  Lin Xu ,  Soonam Park ,  Xikun Wang ,  Jeffrey W. Anthis

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/02 ,  C23F1/02 ,  C23F1/12 ,  H01J37/32 ,  C23F4/00 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. No plasma excites the halogen-containing precursor either remotely or locally in embodiments.

Abstract translation: 描述了从衬底表面选择性地蚀刻含金属材料的方法。 蚀刻相对于含硅膜如硅，多晶硅，氧化硅，硅锗，碳化硅，氮化硅和/或氮化硅选择性去除含金属的材料。 这些方法包括将含金属的材料暴露于基底处理区域中含有卤素的物质。 在实施例中，没有等离子体远程地或局部地激发含卤素的前体。

公开(公告)号：US20160218018A1

公开(公告)日：2016-07-28

申请号：US14607883

申请日：2015-01-28

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Vinod R. Purayath ,  Xikun Wang ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/3213 ,  H01L27/115 ,  H01L21/8234

CPC classification number: H01L21/32136 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32954 ,  H01L21/32135 ,  H01L21/823437 ,  H01L27/11582

Abstract: Methods of selectively etching tungsten from the surface of a patterned substrate are described. The methods electrically separate vertically arranged tungsten slabs from one another as needed. The vertically arranged tungsten slabs may form the walls of a trench during manufacture of a vertical flash memory cell. The tungsten etch may selectively remove tungsten relative to films such as silicon, polysilicon, silicon oxide, aluminum oxide, titanium nitride and silicon nitride. The methods include exposing electrically-shorted tungsten slabs to remotely-excited fluorine formed in a remote plasma region. Process parameters are provided which result in uniform tungsten recess within the trench. A low electron temperature is maintained in the substrate processing region to achieve high etch selectivity and uniform removal throughout the trench.

Abstract translation: 描述了从图案化衬底的表面选择性地蚀刻钨的方法。 所述方法根据需要将垂直排列的钨板彼此电分离。 在垂直闪存单元的制造期间，垂直布置的钨板可以形成沟槽的壁。 钨蚀刻可以相对于诸如硅，多晶硅，氧化硅，氧化铝，氮化钛和氮化硅的膜选择性地去除钨。 这些方法包括将电短路钨板暴露于在远程等离子体区域中形成的远程激发的氟。 提供了在沟槽内产生均匀的钨凹槽的工艺参数。 在基板处理区域中保持低电子温度，以实现高蚀刻选择性并且在整个沟槽中均匀地去除。

公开(公告)号：US09373522B1

公开(公告)日：2016-06-21

申请号：US14603018

申请日：2015-01-22

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Mandar Pandit ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/20 ,  H01L21/311 ,  H01L21/033 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L21/76831 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76807 ,  H01L21/76814

Abstract: A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask and the non-porous carbon layer are removed with a gas-phase etch using plasma effluents formed in a remote plasma from a chlorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the non-porous carbon layer and the titanium nitride.

Abstract translation: 描述了一种去除氮化钛硬掩模的方法。 在去除之前，硬掩模位于低k电介质层之上，并且低k电介质层在去除过程之后保持相对较低的净介电常数。 低k电介质层可以是在通孔底部具有铜的双镶嵌结构的一部分。 在氮化钛硬掩模去除之前沉积无孔碳层以保护低k电介质层和铜。 使用在含氯前体的远程等离子体中形成的等离子体流出物，通过气相蚀刻去除氮化钛硬掩模和无孔碳层。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与无孔碳层和氮化钛反应。

公开(公告)号：US09355862B2

公开(公告)日：2016-05-31

申请号：US14543618

申请日：2014-11-17

Applicant: Applied Materials, Inc.

Inventor： Mandar Pandit ,  Xikun Wang ,  Zhenjiang Cui ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139

Abstract: A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a fluorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.

Abstract translation: 描述了一种去除氮化钛硬掩模的方法。 在去除之前，硬掩模位于低k电介质层之上，并且低k电介质层在去除过程之后保持相对较低的净介电常数。 低k电介质层可以是在通孔底部具有铜的双镶嵌结构的一部分。 在氮化钛硬掩模去除之前沉积无孔碳层以保护低k电介质层和铜。 使用从含氟前体的远程等离子体中形成的等离子体流出物，用气相蚀刻去除氮化钛硬掩模。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。