公开(公告)号：US12134822B2

公开(公告)日：2024-11-05

申请号：US17529463

申请日：2021-11-18

Applicant: Applied Materials, Inc.

Inventor： Tapash Chakraborty ,  Nitin Deepak ,  Prerna Sonthalia Goradia ,  Bahubali S. Upadhye ,  Nilesh Chimanrao Bagul ,  Subramanya P. Herle ,  Visweswaren Sivaramakrishnan

IPC: C23C16/44

Abstract: Exemplary methods of removing lithium-containing deposits may include heating a surface of a lithium-containing deposit. The surface may include oxygen or nitrogen, and the lithium-containing deposit may be disposed on a surface of a processing chamber. The methods may include contacting the surface of the lithium-containing deposit with a hydrogen-containing precursor. The contacting may hydrogenate the surface of the lithium-containing deposit. The methods may include contacting the lithium-containing deposit with a nitrogen-containing precursor to form volatile byproducts. The methods may include exhausting the volatile byproducts of the lithium-containing deposit from the processing chamber.

公开(公告)号：US10273577B2

公开(公告)日：2019-04-30

申请号：US15286234

申请日：2016-10-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Nilesh Chimanrao Bagul ,  Prerna Sonthalia Goradia ,  Robert Jan Visser

IPC: B44C1/22 ,  C23C16/448 ,  H01L21/02 ,  H01L21/311

Abstract: Systems and methods for processing films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a condensed matter (liquid or solid) of one or more precursors. A carrier gas is flowed through the condensed matter and push the droplets toward a substrate placed in a substrate processing region. An inline pump connected with the aerosol generator can also be used to push the droplets towards the substrate. A direct current (DC) electric field is applied between two conducting plates configured to pass the droplets in-between. The size of the droplets is desirably reduced by application of the DC electric field. After passing through the DC electric field, the droplets pass into the substrate processing region and chemically react with the substrate to deposit or etch films.

公开(公告)号：US20180226278A1

公开(公告)日：2018-08-09

申请号：US15425231

申请日：2017-02-06

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao Arnepalli ,  Prerna Sonthalia Goradia ,  Robert Jan Visser ,  Nitin Ingle ,  Mikhail Korolik ,  Jayeeta Biswas ,  Saurabh Lodha

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/67069 ,  H01L21/02244 ,  H01L21/31122

Abstract: Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing a nitrogen-containing precursor into the substrate processing region. The methods may further include removing an amount of the metal-containing material.

公开(公告)号：US20170140920A1

公开(公告)日：2017-05-18

申请号：US15045081

申请日：2016-02-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Nilesh Chimanrao Bagul ,  Prerna Sonthalia Goradia ,  Robert Jan Visser

IPC: H01L21/02 ,  C23C16/448 ,  H01L21/3065

CPC classification number: H01L21/0262 ,  C23C16/045 ,  C23C16/4486 ,  C23C16/45525 ,  H01L21/02107 ,  H01L21/0228 ,  H01L21/02521 ,  H01L21/30621 ,  H01L21/32 ,  H01L21/465

Abstract: Systems and methods for processing films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a condensed matter (liquid or solid) of one or more precursors. A carrier gas is flowed through the condensed matter and push the droplets toward a substrate placed in a substrate processing region. An inline pump connected with the aerosol generator can also be used to push the droplets towards the substrate. A direct current (DC) electric field is applied between two conducting plates configured to pass the droplets in-between. The size of the droplets is desirably reduced by application of the DC electric field. After passing through the DC electric field, the droplets pass into the substrate processing region and chemically react with the substrate to deposit or etch films.

公开(公告)号：US20150275375A1

公开(公告)日：2015-10-01

申请号：US14486105

申请日：2014-09-15

Applicant: Applied Materials, Inc.

Inventor： SUNG JE KIM ,  Laksheswar Kalita ,  Yogita Pareek ,  Ankur Kadam ,  Prerna Sonthalia Goradia ,  Bipin Thakur ,  Dmitry Lubomirsky

IPC: C23C22/66 ,  C23C22/56

CPC classification number: C23C22/66 ,  C23C14/22 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/50 ,  C23C22/56 ,  C23F1/16 ,  C23F1/20 ,  C23F1/32 ,  C23F1/36 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3255 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67306 ,  Y10T428/24322 ,  Y10T428/24355

Abstract: A process for generating a compact alumina passivation layer on an aluminum component includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to concentrated nitric acid, at a temperature below 10° C., for one to 30 minutes. The process also includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to NH4OH for one second to one minute. The process further includes rinsing the component in deionized water for at least one minute and drying it for at least one minute. A component for use in a plasma processing system includes an aluminum component coated with an AlxOy film having a thickness of 4 to 8 nm and a surface roughness less than 0.05 μm greater than a surface roughness of the component without the AlxOy film.

Abstract translation: 在铝组分上产生紧密的氧化铝钝化层的方法包括在去离子水中冲洗组分至少1分钟，将其干燥至少1分钟，并在低于10℃的温度下将其暴露于浓硝酸。 一到30分钟。 该方法还包括将去离子水中的组分冲洗至少1分钟，将其干燥至少1分钟，并将其暴露于NH 4 OH 1秒至1分钟。 该方法还包括将组分在去离子水中冲洗至少1分钟并将其干燥至少一分钟。 用于等离子体处理系统的部件包括涂覆有厚度为4至8nm的Al x O y膜的铝部件和比没有Al x O y膜的部件的表面粗糙度大于0.05μm的表面粗糙度。

公开(公告)号：US10573527B2

公开(公告)日：2020-02-25

申请号：US16376508

申请日：2019-04-05

Applicant: Applied Materials, Inc.

Inventor： Geetika Bajaj ,  Robert Jan Visser ,  Nitin Ingle ,  Zihui Li ,  Prerna Sonthalia Goradia

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing ammonia into the substrate processing region at a temperature above about 200° C. The methods may further include removing an amount of the metal-containing material.

公开(公告)号：US20190311909A1

公开(公告)日：2019-10-10

申请号：US16376508

申请日：2019-04-05

Applicant: Applied Materials, Inc.

Inventor： Geetika Bajaj ,  Robert Jan Visser ,  Nitin Ingle ,  Zihui Li ,  Prerna Sonthalia Goradia

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/311

Abstract: Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing ammonia into the substrate processing region at a temperature above about 200° C. The methods may further include removing an amount of the metal-containing material.

公开(公告)号：US10163629B2

公开(公告)日：2018-12-25

申请号：US15045081

申请日：2016-02-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Ranga Rao Arnepalli ,  Nilesh Chimanrao Bagul ,  Prerna Sonthalia Goradia ,  Robert Jan Visser

IPC: H01L21/02 ,  C23C16/448 ,  H01L21/3065 ,  C23C16/04 ,  C23C16/455 ,  H01L21/306 ,  H01L21/32 ,  H01L21/465

Abstract: Systems and methods for processing films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a condensed matter (liquid or solid) of one or more precursors. A carrier gas is flowed through the condensed matter and push the droplets toward a substrate placed in a substrate processing region. An inline pump connected with the aerosol generator can also be used to push the droplets towards the substrate. A direct current (DC) electric field is applied between two conducting plates configured to pass the droplets in-between. The size of the droplets is desirably reduced by application of the DC electric field. After passing through the DC electric field, the droplets pass into the substrate processing region and chemically react with the substrate to deposit or etch films.

公开(公告)号：US09903020B2

公开(公告)日：2018-02-27

申请号：US14486105

申请日：2014-09-15

Applicant: Applied Materials, Inc.

Inventor： Sung Je Kim ,  Laksheswar Kalita ,  Yogita Pareek ,  Ankur Kadam ,  Prerna Sonthalia Goradia ,  Bipin Thakur ,  Dmitry Lubomirsky

IPC: C23C22/48 ,  C23C22/56 ,  C23C22/66 ,  C23C14/22 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/67 ,  H01L21/673 ,  C23F1/32 ,  C23F1/36 ,  C23F1/16 ,  C23F1/20

CPC classification number: C23C22/66 ,  C23C14/22 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/50 ,  C23C22/56 ,  C23F1/16 ,  C23F1/20 ,  C23F1/32 ,  C23F1/36 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3255 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67306 ,  Y10T428/24322 ,  Y10T428/24355

Abstract: A process for generating a compact alumina passivation layer on an aluminum component includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to concentrated nitric acid, at a temperature below 10° C., for one to 30 minutes. The process also includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to NH4OH for one second to one minute. The process further includes rinsing the component in deionized water for at least one minute and drying it for at least one minute. A component for use in a plasma processing system includes an aluminum component coated with an AlxOy film having a thickness of 4 to 8 nm and a surface roughness less than 0.05 μm greater than a surface roughness of the component without the AlxOy film.

公开(公告)号：US20170092533A1

公开(公告)日：2017-03-30

申请号：US14957380

申请日：2015-12-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Tapash Chakraborty ,  Mark Saly ,  Rana Howlader ,  Eswaranand Venkatasubramanian ,  Prerna Sonthalia Goradia ,  Robert Jan Visser ,  David Thompson

IPC: H01L21/768 ,  H01L21/321 ,  H01L21/02

CPC classification number: H01L21/76802 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/0226 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/32 ,  H01L21/321 ,  H01L21/3212 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76883

Abstract: Methods of selectively depositing a patterned layer on exposed dielectric material but not on exposed metal surfaces are described. A self-assembled monolayer (SAM) is deposited using phosphonic acids. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the exposed metal portion and the tail moiety extending away from the patterned substrate and reducing the deposition rate of the patterned layer above the exposed metal portion relative to the deposition rate of the patterned layer above the exposed dielectric portion. A dielectric layer is subsequently deposited by atomic layer deposition (ALD) which cannot initiate in regions covered with the SAM in embodiments.