公开(公告)号：US12131915B2

公开(公告)日：2024-10-29

申请号：US18325905

申请日：2023-05-30

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Jheng-Hong Jiang ,  Chia-Wei Liu ,  Shing-Huang Wu

IPC: H01L21/321 ,  C22C21/12 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/3212 ,  C22C21/12 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53219 ,  H01L23/53223

Abstract: A cavity may be formed in a dielectric material layer overlying a substrate. A layer stack including a metallic barrier liner, a metallic fill material layer, and a metallic capping material may be deposited in the cavity and over the dielectric material layer. Portions of the layer stack located above a horizontal plane including a top surface of the dielectric material layer may be removed. A contiguous set of remaining material portions of the layer stack includes a metal interconnect structure that is free of a pitted surface.

公开(公告)号：US12110421B2

公开(公告)日：2024-10-08

申请号：US17570230

申请日：2022-01-06

Applicant: SK enpulse Co., Ltd.

Inventor： Seung Chul Hong ,  Deok Su Han ,  Han Teo Park

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/31053 ,  H01L21/3212

Abstract: Provided is a composition for semiconductor processing including abrasive particles and at least one additive. The composition may exhibit excellent polishing performance by being applied to a process of polishing a semiconductor wafer, may minimize defects in a polishing target surface, may achieve flat polishing without a difference in flatness between a plurality of different layers when used to polish the externally exposed surfaces of the layers, and may be applied to polishing of the surface of a semiconductor wafer having a through silicon via (TSV). Also provided is a method of fabricating a semiconductor device using the composition.

公开(公告)号：US20240332344A1

公开(公告)日：2024-10-03

申请号：US18462222

申请日：2023-09-06

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

Inventor： Masaki YAMADA

IPC: H01G4/008 ,  H01L21/321

CPC classification number: H01L28/60 ,  H01L21/3212

Abstract: A semiconductor device according to an embodiment includes: a copper layer having a lower surface, an upper surface, a first side surface, and a second side surface, in which a first distance between the first side surface and the second side surface is larger than a second distance between the lower surface and the upper surface; a first metal layer that is in contact with the lower surface, the first side surface, and the second side surface and contains a first metal material different from copper; and a second metal layer that is in contact with the upper surface and contains a second metal material different from copper.

公开(公告)号：US20240327677A1

公开(公告)日：2024-10-03

申请号：US18733763

申请日：2024-06-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Hung Liao ,  An-Hsuan Lee ,  Shen-Nan Lee ,  Teng-Chun Tsai ,  Chen-Hao Wu ,  Huang-Lin Chao

IPC: C09G1/02 ,  B24B1/00 ,  B24B37/04 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/14 ,  C09K13/06 ,  H01L21/306 ,  H01L21/321 ,  H01L21/8238

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/3212 ,  H01L21/823828

Abstract: A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.

公开(公告)号：US20240318040A1

公开(公告)日：2024-09-26

申请号：US18609533

申请日：2024-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yearin Byun ,  Jeongwon Lim ,  Boyun Kim ,  Sanghyun Park ,  Seungho Park

IPC: C09G1/04 ,  H01L21/3205 ,  H01L21/321

CPC classification number: C09G1/04 ,  H01L21/3212 ,  H01L21/32051

Abstract: Provided is a chemical mechanical polishing (CMP) slurry composition including an organic booster including an amino acid, a pH adjuster, and inorganic abrasive particles of less than 0.1 weight % with respect to a total weight of the CMP slurry composition, wherein a material constituting a remaining part of the CMP slurry composition is deionized water (DIW).

公开(公告)号：US20240318039A1

公开(公告)日：2024-09-26

申请号：US18603614

申请日：2024-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yearin BYUN ,  Inkwon KIM ,  Sanghyun PARK

IPC: C09G1/04 ,  H01L21/3205 ,  H01L21/321

CPC classification number: C09G1/04 ,  H01L21/3212 ,  H01L21/32051

Abstract: Provided is a chemical mechanical polishing slurry used for chemical mechanical polishing of a metal layer. The chemical mechanical polishing slurry may include deionized water, abrasive particles, and an aqueous solution including a temperature-sensitive oxidizing agent configured to control both the static etch rate and removal rate of the metal layer in a chemical mechanical polishing process when the polishing temperature of the chemical mechanical polishing process is 10° C. to 75° C.

公开(公告)号：US20240308019A1

公开(公告)日：2024-09-19

申请号：US18185849

申请日：2023-03-17

Applicant: Applied Materials, Inc.

Inventor： Wei Lu ,  Yu-Chi Yeh ,  Kun-Yo Lin ,  Wade Chung ,  Harry Q. Lee ,  Nick Huang ,  Jianshe Tang

IPC: B24B37/005 ,  B24B37/04 ,  H01L21/321 ,  H01L21/66

CPC classification number: B24B37/0053 ,  B24B37/042 ,  H01L21/3212 ,  H01L22/26

Abstract: Exemplary methods for detecting substrate slippage include sweeping a first sensor and a second sensor of an in-situ monitoring system across the substrate as the substrate undergoes polishing with a rotatable platen. A first sequence of signal values from the first sensor and a second sequence of signal values from the second sensor include a signal strength relative to the thickness of the layer. For each signal value of at least some of the first sequence of signal values and second sequence of signal values, the method may include determining a first and second position on the substrate respective. The method may also include activating a slippage alert if: the signal strength varies by 30% or more from the first sequence of signal values to the second sequence of signal values, a position on the substrate for the second signal value cannot be determined, or a combination thereof.

公开(公告)号：US12090602B2

公开(公告)日：2024-09-17

申请号：US17371709

申请日：2021-07-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Bruce Cho ,  Chia-Ying Tien ,  Huang-Chu Ko

IPC: H01L21/67 ,  B24B1/00 ,  B24B37/005 ,  B24B37/04 ,  B24B37/10 ,  B24B47/12 ,  H01L21/306 ,  H01L21/321 ,  H01L21/687 ,  H02P29/00

CPC classification number: B24B47/12 ,  B24B1/00 ,  B24B37/005 ,  B24B37/044 ,  B24B37/10 ,  H01L21/30625 ,  H01L21/3212 ,  H02P29/00

Abstract: A device includes a rotator assembly configured to control a rotational kinetic energy of a wafer-platen based on an electrical energy input. The device further includes a controller configured to control the rotational kinetic energy of the wafer-platen, wherein a rotational velocity of the wafer-platen is either increased or decreased. The device further includes a converter configured to generate an electrical energy output of the rotator assembly based on decreased rotational kinetic energy of the wafer-platen. The device further includes an energy storage device configured to store the electrical energy outputted by the rotator assembly based on the decreased rotational kinetic energy of the wafer-platen.

公开(公告)号：US20240304455A1

公开(公告)日：2024-09-12

申请号：US18667585

申请日：2024-05-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Ping TSENG ,  Ren-Hao JHENG

IPC: H01L21/321 ,  B24B9/06 ,  B24B37/04 ,  B24B37/24 ,  B24B37/26

CPC classification number: H01L21/3212 ,  B24B9/065 ,  B24B37/044 ,  B24B37/24 ,  B24B37/26

Abstract: The present disclosure provides an apparatus and a method for polishing a semiconductor substrate in semiconductor device manufacturing. The apparatus can include: a carrier configured to hold the substrate; a polishing pad configured to polish a first surface of the substrate; a chemical mechanical polishing (CMP) slurry delivery arm configured to dispense a CMP slurry onto the first surface of the substrate; and a pad conditioner configured to condition the polishing pad. In some embodiments, the pad conditioner can include: a conditioning disk configured to scratch the polishing pad; a conditioning arm configured to rotate the conditioning disk; a plurality of magnetic screws configured to secure the conditioning disk onto the conditioning arm and including a respective plurality of screw heads; and a plurality of blocking devices respectively positioned beneath the plurality of screw heads and configured to block debris particles from entering a respective plurality of screw holes.

公开(公告)号：US12087590B2

公开(公告)日：2024-09-10

申请号：US18066934

申请日：2022-12-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Kung ,  Hui-Chi Huang ,  Kei-Wei Chen ,  Yen-Ting Chen

IPC: H01L21/306 ,  B24B37/24 ,  H01L21/321

CPC classification number: H01L21/30625 ,  B24B37/24 ,  H01L21/3212

Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.