公开(公告)号：US11964358B2

公开(公告)日：2024-04-23

申请号：US17206628

申请日：2021-03-19

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shang-Yu Wang ,  Chun-Hao Kung ,  Ching-Hsiang Tsai ,  Kei-Wei Chen ,  Hui-Chi Huang

IPC分类号： B24B37/10 ,  B24B37/04 ,  B24B49/00 ,  H01L21/306

CPC分类号： B24B37/107 ,  B24B37/042 ,  B24B49/00 ,  H01L21/30625

摘要： A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.

公开(公告)号：US11446785B2

公开(公告)日：2022-09-20

申请号：US16584874

申请日：2019-09-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Chih-Chieh Chang ,  Yen-Ting Chen ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC分类号： B24B53/017 ,  B24B37/20

摘要： Provided herein are chemical-mechanical planarization (CMP) systems and methods to reduce metal particle pollution on dressing disks and polishing pads. Such methods may include contacting a dressing disk and at least one conductive element with an electrolyte solution and applying direct current (DC) power to the dressing disk and the at least one conductive element.

公开(公告)号：US20240326195A1

公开(公告)日：2024-10-03

申请号：US18193405

申请日：2023-03-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Fang-I Chen ,  Pei-Keng Tsai ,  Hui-Chi Huang

IPC分类号： B24B3/46

CPC分类号： B24B3/46

摘要： An apparatus includes a first platen configured to hold a first workpiece; a first dressing board; and blade holder including arms extending from a central axis, wherein the blade holder is configured to hold a blade at an end of each respective arm, wherein the blade holder is operable to rotate around the central axis, wherein the blade holder is configured to trim the first workpiece using at least one blade, wherein the blade holder is configured to dress at least one blade on the first dressing board.

公开(公告)号：US12087590B2

公开(公告)日：2024-09-10

申请号：US18066934

申请日：2022-12-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chun-Hao Kung ,  Hui-Chi Huang ,  Kei-Wei Chen ,  Yen-Ting Chen

IPC分类号： H01L21/306 ,  B24B37/24 ,  H01L21/321

CPC分类号： H01L21/30625 ,  B24B37/24 ,  H01L21/3212

摘要： Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.

公开(公告)号：US12030159B2

公开(公告)日：2024-07-09

申请号：US18334526

申请日：2023-06-14

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Tung-Kai Chen ,  Shang-Yu Wang ,  Wan-Chun Pan ,  Zink Wei ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC分类号： B24B49/12 ,  B24B37/12 ,  B24B37/20 ,  B24B53/017 ,  G01N21/64

CPC分类号： B24B49/12 ,  B24B37/12 ,  B24B37/20 ,  B24B53/017 ,  G01N21/6456

摘要： A method of operating a chemical mechanical planarization (CMP) tool includes attaching a polishing pad to a first surface of a platen of the CMP tool using a glue; removing the polishing pad from the platen, wherein after removing the polishing pad, residue portions of the glue remain on the first surface of the platen; identifying locations of the residue portions of the glue on the first surface of the platen using a fluorescent material; and removing the residue portions of the glue from the first surface of the platen.

公开(公告)号：US20230321789A1

公开(公告)日：2023-10-12

申请号：US18334526

申请日：2023-06-14

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Tung-Kai Chen ,  Shang-Yu Wang ,  Wan-Chun Pan ,  Zink Wei ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC分类号： B24B49/12 ,  G01N21/64 ,  B24B53/017 ,  B24B37/20 ,  B24B37/12

CPC分类号： B24B49/12 ,  G01N21/6456 ,  B24B53/017 ,  B24B37/20 ,  B24B37/12

摘要： A method of operating a chemical mechanical planarization (CMP) tool includes attaching a polishing pad to a first surface of a platen of the CMP tool using a glue; removing the polishing pad from the platen, wherein after removing the polishing pad, residue portions of the glue remain on the first surface of the platen; identifying locations of the residue portions of the glue on the first surface of the platen using a fluorescent material; and removing the residue portions of the glue from the first surface of the platen.

公开(公告)号：US20230118617A1

公开(公告)日：2023-04-20

申请号：US18066934

申请日：2022-12-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chun-Hao Kung ,  Hui-Chi Huang ,  Kei-Wei Chen ,  Yen-Ting Chen

IPC分类号： H01L21/306 ,  B24B37/24 ,  H01L21/321

摘要： Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.

公开(公告)号：US20220367257A1

公开(公告)日：2022-11-17

申请号：US17869560

申请日：2022-07-20

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chun-Hao Kung ,  Chih-Chieh Chang ,  Kao-Feng Liao ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC分类号： H01L21/768

摘要： A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.

公开(公告)号：US20210313190A1

公开(公告)日：2021-10-07

申请号：US17353222

申请日：2021-06-21

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chun-Hao Kung ,  Tung-Kai Chen ,  Chih-Chieh Chang ,  Kao-Feng Liao ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC分类号： H01L21/321 ,  H01L21/768 ,  C09G1/02 ,  C09G1/04 ,  H01L21/306

摘要： Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.

公开(公告)号：US20240339326A1

公开(公告)日：2024-10-10

申请号：US18297946

申请日：2023-04-10

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Fang-I Chen ,  Pei-Keng Tsai ,  Hui-Chi Huang

IPC分类号： H01L21/304 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/304 ,  H01L21/67051 ,  H01L21/67288 ,  H01L21/68714

摘要： A method of trimming a wafer includes securing the wafer on a top surface of a wafer chuck of a wafer edge trimming apparatus, directing a water jet at an edge of the wafer to form a plurality of cracks at uniform intervals along the edge of the wafer, inserting a wedge of a removal module into a first crack of the plurality of cracks, and rotating the wafer, where during the rotation of the wafer, the wedge expands the first crack of the plurality of cracks and removes material from the edge of the wafer.