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10 条记录 (耗时 0.017 秒)

    Wafer cleaning module
    2.
    发明授权
    Wafer cleaning module 有权
    晶圆清洗模块

    公开(公告)号：US09337066B2

    公开(公告)日：2016-05-10

    申请号：US14072210

    申请日：2013-11-05

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Yu-Ting Yen ,  Kao-Feng Liao ,  Ying-Ho Chen

    IPC分类号： B08B3/00 ,  B08B3/04 ,  B08B5/02 ,  B08B7/04 ,  H01L21/67 ,  H01L21/677 ,  H01L21/68

    CPC分类号： H01L21/67057 ,  B08B3/04 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67751 ,  H01L21/681

    摘要： The present disclosure relates to a wafer cleaning module for post CMP processes that reduces defects (e.g., watermarks, deposited particles) on a substrate, and an associated method. In some embodiments, the wafer cleaning module has a cleaning tank that may receive a semiconductor substrate within a cleaning medium. A pusher is may vertically move the semiconductor substrate from a starting position within the cleaning tank to an ending position. A position sensor may determine a position of the semiconductor substrate relative to a meniscus of the cleaning medium. Based upon the determined position, a control unit is may adjust a location of the starting position to a predetermined distance below the meniscus.

    摘要翻译： 本公开内容涉及用于后CMP处理的晶片清洁模块，其减少基板上的缺陷（例如，水印，沉积的颗粒）以及相关联的方法。 在一些实施例中，晶片清洁模块具有可在清洁介质内接收半导体衬底的清洗槽。 推动器可以将半导体衬底从清洗槽内的起始位置垂直移动到结束位置。 位置传感器可以确定半导体衬底相对于清洁介质的弯液面的位置。 基于确定的位置，控制单元可以将起始位置的位置调整到弯月面以下预定距离。

    WAFER CLEANING MODULE
    4.
    发明申请
    WAFER CLEANING MODULE 有权
    WAFER清洁模块

    公开(公告)号：US20150122291A1

    公开(公告)日：2015-05-07

    申请号：US14072210

    申请日：2013-11-05

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Yu-Ting Yen ,  Kao-Feng Liao ,  Ying-Ho Chen

    IPC分类号： H01L21/67 ,  H01L21/02

    CPC分类号： H01L21/67057 ,  B08B3/04 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67751 ,  H01L21/681

    摘要： The present disclosure relates to a wafer cleaning module for post CMP processes that reduces defects (e.g., watermarks, deposited particles) on a substrate, and an associated method. In some embodiments, the wafer cleaning module has a cleaning tank that may receive a semiconductor substrate within a cleaning medium. A pusher is may vertically move the semiconductor substrate from a starting position within the cleaning tank to an ending position. A position sensor may determine a position of the semiconductor substrate relative to a meniscus of the cleaning medium. Based upon the determined position, a control unit is may adjust a location of the starting position to a predetermined distance below the meniscus.

    摘要翻译： 本公开内容涉及用于后CMP处理的晶片清洁模块，其减少基板上的缺陷（例如，水印，沉积的颗粒）以及相关联的方法。 在一些实施例中，晶片清洁模块具有可在清洁介质内接收半导体衬底的清洗槽。 推动器可以将半导体衬底从清洁槽内的起始位置垂直移动到结束位置。 位置传感器可以确定半导体衬底相对于清洁介质的弯液面的位置。 基于确定的位置，控制单元可以将起始位置的位置调整到弯月面以下预定距离。

    CMP-friendly coatings for planar recessing or removing of variable-height layers
    6.
    发明授权
    CMP-friendly coatings for planar recessing or removing of variable-height layers 有权
    用于平面凹陷或去除可变高度层的CMP友好型涂层

    公开(公告)号：US09281192B2

    公开(公告)日：2016-03-08

    申请号：US14276168

    申请日：2014-05-13

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Wen-Kuei Liu ,  Teng-Chun Tsai ,  Kao-Feng Liao ,  Yu-Ting Yen ,  Yu-Chung Su

    IPC分类号： H01L21/302 ,  H01L21/027 ,  H01L21/311 ,  H01L21/28

    CPC分类号： H01L21/31055 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/28008 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/3213 ,  H01L21/32139 ,  H01L21/823821 ,  H01L21/845 ,  H01L29/66545

    摘要： An IC device manufacturing process effectuates a planar recessing of material that initially varies in height across a substrate. The method includes forming a polymer coating, CMP to form a planar surface, then plasma etching to effectuate a planar recessing of the polymer coating. The material can be recessed together with the polymer coating, or subsequently with the recessed polymer coating providing a mask. Any of the material above a certain height is removed. Structures that are substantially below that certain height can be protected from contamination and left intact. The polymer can be a photoresist. The polymer can be provided with suitable adhesion and uniformity for the CMP process through a two-step baking process and by exhausting the baking chamber from below the substrate.

    摘要翻译： IC器件制造工艺实现了最初在衬底上高度变化的材料的平面凹陷。 该方法包括形成聚合物涂层，CMP以形成平面表面，然后进行等离子体蚀刻，以实现聚合物涂层的平面凹陷。 该材料可以与聚合物涂层一起凹陷在一起，或随后与凹陷的聚合物涂层一起提供掩模。 任何高于一定高度的材料都被去除。 可以保护基本上低于该特定高度的结构免受污染并保持不变。 聚合物可以是光致抗蚀剂。 聚合物可以通过两步烘烤工艺和通过从基底下方排出烘烤室而为CMP工艺提供合适的粘附和均匀性。

    CMP-FRIENDLY COATINGS FOR PLANAR RECESSING OR REMOVING OF VARIABLE-HEIGHT LAYERS
    7.
    发明申请
    CMP-FRIENDLY COATINGS FOR PLANAR RECESSING OR REMOVING OF VARIABLE-HEIGHT LAYERS 有权
    用于平面记录或移除可变高度层的CMP友好涂层

    公开(公告)号：US20150262812A1

    公开(公告)日：2015-09-17

    申请号：US14276168

    申请日：2014-05-13

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Wen-Kuei Liu ,  Teng-Chun Tsai ,  Kao-Feng Liao ,  Yu-Ting Yen ,  Yu-Chung Su

    IPC分类号： H01L21/027 ,  H01L21/28 ,  H01L21/311

    CPC分类号： H01L21/31055 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/28008 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/3213 ,  H01L21/32139 ,  H01L21/823821 ,  H01L21/845 ,  H01L29/66545

    摘要： An IC device manufacturing process effectuates a planar recessing of material that initially varies in height across a substrate. The method includes forming a polymer coating, CMP to form a planar surface, then plasma etching to effectuate a planar recessing of the polymer coating. The material can be recessed together with the polymer coating, or subsequently with the recessed polymer coating providing a mask. Any of the material above a certain height is removed. Structures that are substantially below that certain height can be protected from contamination and left intact. The polymer can be a photoresist. The polymer can be provided with suitable adhesion and uniformity for the CMP process through a two-step baking process and by exhausting the baking chamber from below the substrate.

    摘要翻译： IC器件制造工艺实现了最初在衬底上高度变化的材料的平面凹陷。 该方法包括形成聚合物涂层，CMP以形成平面表面，然后进行等离子体蚀刻，以实现聚合物涂层的平面凹陷。 该材料可以与聚合物涂层一起凹陷在一起，或随后与凹陷的聚合物涂层一起提供掩模。 任何高于一定高度的材料都被去除。 可以保护基本上低于该特定高度的结构免受污染并保持不变。 聚合物可以是光致抗蚀剂。 聚合物可以通过两步烘烤工艺和通过从基底下方排出烘烤室而为CMP工艺提供合适的粘附和均匀性。