公开(公告)号：US12229487B2

公开(公告)日：2025-02-18

申请号：US18308916

申请日：2023-04-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Shuo Liu ,  Chih-Chun Hsia ,  Hsin-Ting Chou ,  Kuanhua Su ,  William Weilun Hong ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: G06F30/392 ,  G06F111/20 ,  G06T7/00

Abstract: A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.

公开(公告)号：US20240274440A1

公开(公告)日：2024-08-15

申请号：US18631589

申请日：2024-04-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Te-Chien Hou ,  Yu-Ting Yen ,  Cheng-Yu Kuo ,  Chih Hung Chen ,  William Weilun Hong ,  Kei-Wei Chen

IPC: H01L21/3105 ,  B24B37/04 ,  B24B37/20 ,  C02F1/469 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L21/31053 ,  B24B37/042 ,  B24B37/044 ,  B24B37/20 ,  H01L21/02065 ,  H01L21/31055 ,  H01L29/66545 ,  C02F1/4691

Abstract: A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.

公开(公告)号：US12002854B2

公开(公告)日：2024-06-04

申请号：US17520983

申请日：2021-11-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Heng-Wen Ting ,  Kei-Wei Chen ,  Chii-Horng Li ,  Pei-Ren Jeng ,  Hsueh-Chang Sung ,  Yen-Ru Lee ,  Chun-An Lin

IPC: H01L29/08 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0847 ,  H01L21/02532 ,  H01L29/66545 ,  H01L29/6681 ,  H01L29/785

Abstract: A semiconductor device having an improved source/drain region profile and a method for forming the same are disclosed. In an embodiment, a method includes etching one or more semiconductor fins to form one or more recesses; and forming a source/drain region in the one ore more recesses, the forming the source/drain region including epitaxially growing a first semiconductor material in the one or more recesses at a temperature of 600° C. to 800° C., the first semiconductor material including doped silicon germanium; and conformally depositing a second semiconductor material over the first semiconductor material at a temperature of 300° C. to 600° C., the second semiconductor material including doped silicon germanium and having a different composition than the first semiconductor material.

公开(公告)号：US11964358B2

公开(公告)日：2024-04-23

申请号：US17206628

申请日：2021-03-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Yu Wang ,  Chun-Hao Kung ,  Ching-Hsiang Tsai ,  Kei-Wei Chen ,  Hui-Chi Huang

IPC: B24B37/10 ,  B24B37/04 ,  B24B49/00 ,  H01L21/306

CPC classification number: B24B37/107 ,  B24B37/042 ,  B24B49/00 ,  H01L21/30625

Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.

公开(公告)号：US20230267264A1

公开(公告)日：2023-08-24

申请号：US18308916

申请日：2023-04-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Shuo Liu ,  Chih-Chun Hsia ,  Hsin-Ting Chou ,  Kuanhua Su ,  William Weilun Hong ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: G06F30/392 ,  G06T7/00

CPC classification number: G06F30/392 ,  G06T7/001 ,  G06F2111/20

Abstract: A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.

公开(公告)号：US11718812B2

公开(公告)日：2023-08-08

申请号：US17191534

申请日：2021-03-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ji Cui ,  William Weilun Hong ,  Gin-Chen Huang ,  Shich-Chang Suen ,  Kei-Wei Chen

IPC: C11D3/43 ,  C11D1/40 ,  H01L29/66 ,  H01L29/78 ,  H01L21/304 ,  H01L21/306 ,  H01L21/321 ,  C11D11/00 ,  C11D3/37 ,  C11D3/30 ,  C11D3/00 ,  H01L21/02

CPC classification number: C11D1/40 ,  C11D3/0047 ,  C11D3/30 ,  C11D3/3723 ,  C11D3/3773 ,  C11D3/43 ,  C11D11/0047 ,  H01L21/02041 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3212 ,  H01L29/66795 ,  H01L29/785

Abstract: A cleaning composition for cleaning a surface of a substrate comprising silicon germanium after a chemical mechanical polishing process is provided. The cleaning composition includes an oligomeric or polymeric polyamine, at least one wetting agent, a pH adjusting agent, and a solvent.

公开(公告)号：US11621342B2

公开(公告)日：2023-04-04

申请号：US17068578

申请日：2020-10-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih Hung Chen ,  Kei-Wei Chen ,  Ying-Lang Wang

IPC: H01L29/66 ,  H01L29/40 ,  H01L21/67 ,  H01L21/321 ,  B24B37/00 ,  B24B37/10 ,  B24B7/22 ,  H01L29/08

Abstract: In an embodiment, a method includes: performing a self-limiting process to modify a top surface of a wafer; after the self-limiting process completes, removing the modified top surface from the wafer; and repeating the performing the self-limiting process and the removing the modified top surface from the wafer until a thickness of the wafer is decreased to a predetermined thickness.

公开(公告)号：US11446785B2

公开(公告)日：2022-09-20

申请号：US16584874

申请日：2019-09-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Chieh Chang ,  Yen-Ting Chen ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: B24B53/017 ,  B24B37/20

Abstract: Provided herein are chemical-mechanical planarization (CMP) systems and methods to reduce metal particle pollution on dressing disks and polishing pads. Such methods may include contacting a dressing disk and at least one conductive element with an electrolyte solution and applying direct current (DC) power to the dressing disk and the at least one conductive element.

公开(公告)号：US11443095B2

公开(公告)日：2022-09-13

申请号：US16926026

申请日：2020-07-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： I-Shuo Liu ,  Chih-Chun Hsia ,  Hsin Ting Chou ,  Kuanhua Su ,  William Weilun Hong ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: G06F30/392 ,  G06T7/00 ,  G06F111/20

Abstract: A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.

公开(公告)号：US11367660B2

公开(公告)日：2022-06-21

申请号：US17121490

申请日：2020-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Hsiung Yen ,  Ta-Chun Ma ,  Chien-Chang Su ,  Jung-Jen Chen ,  Pei-Ren Jeng ,  Chii-Horng Li ,  Kei-Wei Chen

IPC: H01L21/8234 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/165 ,  H01L29/10 ,  H01L21/02 ,  H01L21/324 ,  H01L27/092

Abstract: A device is manufactured by providing a semiconductor fin protruding from a major surface of a silicon substrate comprising silicon. A liner and a shallow trench isolation (STI) region are formed adjacent the semiconductor fin. A silicon cap is deposited over the semiconductor fin. The resulting cap consists of crystalline silicon in the portion over the semiconductor fin and consists of amorphous silicon in the portions over the liner and STI region. An HCl etch bake process is performed to remove the portions of amorphous silicon over the liner and the STI region.