公开(公告)号：US09630295B2

公开(公告)日：2017-04-25

申请号：US13944353

申请日：2013-07-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： He-Hui Peng ,  Fu-Ming Huang ,  Shich-Chang Suen ,  Han-Hsin Kuo ,  Chi-Ming Tsai ,  Liang-Guang Chen

IPC: B24B53/017 ,  H01L21/304 ,  B08B3/02

CPC classification number: B24B53/017 ,  B08B3/02 ,  H01L21/304

Abstract: Embodiments of mechanisms for performing a chemical mechanical polishing (CMP) process are provided. A method for performing a CMP process includes polishing a wafer by using a polishing pad. The method also includes applying a cleaning liquid jet on the polishing pad to condition the polishing pad. A CMP system is also provided.

公开(公告)号：US11718812B2

公开(公告)日：2023-08-08

申请号：US17191534

申请日：2021-03-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ji Cui ,  William Weilun Hong ,  Gin-Chen Huang ,  Shich-Chang Suen ,  Kei-Wei Chen

IPC: C11D3/43 ,  C11D1/40 ,  H01L29/66 ,  H01L29/78 ,  H01L21/304 ,  H01L21/306 ,  H01L21/321 ,  C11D11/00 ,  C11D3/37 ,  C11D3/30 ,  C11D3/00 ,  H01L21/02

CPC classification number: C11D1/40 ,  C11D3/0047 ,  C11D3/30 ,  C11D3/3723 ,  C11D3/3773 ,  C11D3/43 ,  C11D11/0047 ,  H01L21/02041 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3212 ,  H01L29/66795 ,  H01L29/785

Abstract: A cleaning composition for cleaning a surface of a substrate comprising silicon germanium after a chemical mechanical polishing process is provided. The cleaning composition includes an oligomeric or polymeric polyamine, at least one wetting agent, a pH adjusting agent, and a solvent.

公开(公告)号：US20210296173A1

公开(公告)日：2021-09-23

申请号：US17333090

申请日：2021-05-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shich-Chang Suen ,  Kei-Wei Chen ,  Liang-Guang Chen

IPC: H01L21/768 ,  H01L21/02 ,  H01L29/66 ,  H01L21/311 ,  H01L21/285 ,  H01L21/033 ,  H01L29/78 ,  H01L23/522 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/8238

Abstract: A method includes forming a first gate structure over a substrate, where the first gate structure is surrounded by a first dielectric layer; and forming a mask structure over the first gate structure and over the first dielectric layer, where forming the mask structure includes selectively forming a first capping layer over an upper surface of the first gate structure; and forming a second dielectric layer around the first capping layer. The method further includes forming a patterned dielectric layer over the mask structure, the patterned dielectric layer exposing a portion of the mask structure; removing the exposed portion of the mask structure and a portion of the first dielectric layer underlying the exposed portion of the mask structure, thereby forming a recess exposing a source/drain region adjacent to the first gate structure; and filling the recess with a conductive material.

公开(公告)号：US09272386B2

公开(公告)日：2016-03-01

申请号：US14058054

申请日：2013-10-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shich-Chang Suen ,  Chin-Hsiang Chan ,  Liang-Guang Chen ,  Yung-Cheng Lu

IPC: B24B37/30 ,  B24D9/08 ,  B24B37/005 ,  B24B49/10 ,  B24B37/04 ,  B24B41/06

CPC classification number: B24B37/20 ,  B24B37/005 ,  B24B37/04 ,  B24B37/30 ,  B24B41/06 ,  B24B49/10 ,  B24D9/08

Abstract: A polishing head for a chemical-mechanical polishing system includes a carrier head, at least one electromagnetism actuated pressure sector and a membrane. The electromagnetism actuated pressure sector is disposed on the carrier head. The membrane covers the electromagnetism actuated pressure sector.

Abstract translation: 用于化学机械抛光系统的抛光头包括载体头，至少一个电磁致动压力扇区和膜。 电磁致动压力扇区设置在承载头上。 膜覆盖电磁致动压力扇区。

公开(公告)号：US20210220962A1

公开(公告)日：2021-07-22

申请号：US17222005

申请日：2021-04-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shich-Chang Suen ,  Liang-Guang Chen ,  Kei-Wei Chen

IPC: B24B37/04 ,  B24B37/20 ,  B24B37/22 ,  B24B37/24

Abstract: A polishing platform of a polishing apparatus includes a platen, a polishing pad, and an electric field element disposed between the platen and the polishing pad. The polishing apparatus further includes a controller configured to apply voltages to the electric field element. A first voltage is applied to the electric field element to attract charged particles of a polishing slurry toward the polishing pad. The attracted particles reduce overall topographic variation of a polishing surface presented to a workpiece for polishing. A second voltage is applied to the electric field element to attract additional charged particles of the polishing slurry toward the polishing pad. The additional attracted particles further reduce overall topographic variation of the polishing surface presented to the workpiece. A third voltage is applied to the electric field element to repel charged particles of the polishing slurry away from the polishing pad for improved cleaning thereof.

公开(公告)号：US20180043495A1

公开(公告)日：2018-02-15

申请号：US15797779

申请日：2017-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Che-Liang Chung ,  Chun-Kai Tai ,  Shich-Chang Suen ,  Wei-Chen Hsiao

IPC: B24B37/005 ,  B24B37/26

CPC classification number: B24B37/005 ,  B24B37/26 ,  B24B49/12 ,  B24B53/017

Abstract: A method for polishing a polishing pad includes detecting a presence of a defect formed on a groove of a polishing pad; removing the defect from the groove of the polishing pad; after removing the defect, measuring a remaining depth of the groove; and based on the measured remaining depth of the groove, applying a polishing condition on the groove.

公开(公告)号：US20150133033A1

公开(公告)日：2015-05-14

申请号：US14078999

申请日：2013-11-13

Applicant: Taiwan Semiconductor Manufacturing CO., LTD.

Inventor： Shich-Chang Suen ,  Chin-Hsiang Chan ,  Liang-Guang Chen ,  Yung-Cheng Lu

IPC: B24B37/34 ,  B24B49/12 ,  B24B37/10 ,  B24B49/10 ,  B24B37/20 ,  B24B37/005

CPC classification number: B24B37/34 ,  B24B37/005 ,  B24B37/105 ,  B24B37/205 ,  B24B37/26 ,  B24B49/105 ,  B24B49/12

Abstract: A platen assembly includes a platen body, a polishing pad, and a fountain slurry supplier. The platen body has an upper surface. The polishing pad is disposed on the upper surface of the platen body. The fountain slurry supplier is at least partially disposed on the upper surface of the platen body for supplying slurry up onto the polishing pad.

Abstract translation: 压板组件包括压板体，抛光垫和喷泉浆料供应器。 压板本体具有上表面。 抛光垫设置在压板本体的上表面上。 喷泉浆料供应器至少部分地设置在压板主体的上表面上，用于将浆料提供到抛光垫上。

公开(公告)号：US10160088B2

公开(公告)日：2018-12-25

申请号：US15797779

申请日：2017-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Che-Liang Chung ,  Chun-Kai Tai ,  Shich-Chang Suen ,  Wei-Chen Hsiao

IPC: B24B53/017 ,  B24B37/005 ,  B24B37/26 ,  B24B49/12

Abstract: A method for polishing a polishing pad includes detecting a presence of a defect formed on a groove of a polishing pad; removing the defect from the groove of the polishing pad; after removing the defect, measuring a remaining depth of the groove; and based on the measured remaining depth of the groove, applying a polishing condition on the groove.

公开(公告)号：US09352443B2

公开(公告)日：2016-05-31

申请号：US14078999

申请日：2013-11-13

Applicant: Taiwan Semiconductor Manufacturing CO., LTD.

Inventor： Shich-Chang Suen ,  Chin-Hsiang Chan ,  Liang-Guang Chen ,  Yung-Cheng Lu

IPC: B24B37/34 ,  B24B49/12 ,  B24B37/20 ,  B24B37/005 ,  B24B37/10 ,  B24B49/10 ,  B24B37/26

CPC classification number: B24B37/34 ,  B24B37/005 ,  B24B37/105 ,  B24B37/205 ,  B24B37/26 ,  B24B49/105 ,  B24B49/12

Abstract: A platen assembly includes a platen body, a polishing pad, and a fountain slurry supplier. The platen body has an upper surface. The polishing pad is disposed on the upper surface of the platen body. The fountain slurry supplier is at least partially disposed on the upper surface of the platen body for supplying slurry up onto the polishing pad.

Abstract translation: 压板组件包括压板体，抛光垫和喷泉浆料供应器。 压板本体具有上表面。 抛光垫设置在压板本体的上表面上。 喷泉浆料供应器至少部分地设置在压板主体的上表面上，用于将浆料提供到抛光垫上。

公开(公告)号：US20230398659A1

公开(公告)日：2023-12-14

申请号：US17822867

申请日：2022-08-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Te-Chien Hou ,  Chih Hung Chen ,  Liang-Che Chen ,  Shich-Chang Suen ,  Liang-Guang Chen

IPC: B24D3/00 ,  B24B7/22 ,  H01L21/304

CPC classification number: B24D3/00 ,  H01L21/304 ,  B24B7/228

Abstract: Polishing pads having varying protrusions and methods of forming the same are disclosed. In an embodiment, a polishing pad includes a polishing pad substrate; a first protrusion on the polishing pad substrate, the first protrusion including a central region and a peripheral region surrounding the central region, and a first hardness of the central region being greater than a second hardness of the peripheral region; and a first groove adjacent a first side of the first protrusion.