Abstract:
Shortcomings associated with insufficient control of a conventional CMP-process are obviated by providing an CMP-apparatus configured to complement a constant force (to which a workpiece that is being polished is conventionally exposed) with a time-alternating force and/or means for measuring an electrical characteristic of the CMP-process. The time-alternating force is applied with the use of a system component that is electrically isolated from the workpiece and that is disposed in the carrier-chick in which the workpiece is affixed for CMP-process, while the electrical characteristic is measured with the use of a judiciously-configured reservoir in which the used fluid is collected. The use of such CMP-apparatus.
Abstract:
An apparatus for performing a polishing process includes: a rotatable polishing pad; a temperature sensor configured to monitor a temperature on a top surface of the rotatable polishing pad; a first dispenser configured to dispense a first slurry that is maintained at a first temperature on the rotatable polishing pad; and a second dispenser configured to dispense a second slurry that is maintained at a second temperature on the rotatable polishing pad, wherein the second temperature is different from the first temperature so as to maintain the temperature on the top surface of the rotatable polishing pad at a substantially constant value.
Abstract:
A polishing apparatus comprises a dresser that can adjust swing speed in the scanning areas set on a polishing member along a swing direction, a height detection section that measures a surface height of the polishing member in a plurality of monitoring areas set on the polishing member along the swing direction of the dresser, a dress model matrix creation section that creates a dress model matrix defined from a plurality of monitoring areas, scanning areas and a dress model, an evaluation index creation section that calculates a height profile predicted value using the dress model, the swing speed in each scanning area or a staying time and sets evaluation index based on a difference from a target value of height profile of the polishing member and a moving speed calculation section that calculates the swing speed in each scanning area of the dresser based on the evaluation index.
Abstract:
Implementations of the present disclosure generally relate to planarization of surfaces on substrates and on layers formed on substrates, including an apparatus for in-situ temperature control during polishing, and methods of using the same. More specifically, implementations of the present disclosure relate to in-situ temperature control with a condensed gas during a chemical-mechanical polishing (CMP) process. In one implementation, the method comprises polishing one or more substrates against a polishing surface in the presence of a polishing fluid during a polishing process to remove a portion of a material formed on the one or more substrates. A temperature of the polishing surface is monitored during the polishing process. Carbon dioxide snow is delivered to the polishing surface in response to the monitored temperature to maintain the temperature of the polishing surface at a target value during the polishing process.
Abstract:
The invention suppresses generation of noises attributable to rotation of a rotary joint. A rotary joint includes a rotating body that rotates on a rotating axis A, a housing disposed so as to surround the rotating body, and at least one bearing disposed between the rotating body and the housing and adapted to support rotation of the rotating body. The rotary joint supplies fluids through fluid connection ports formed in the housing and fluid passages formed inside the rotating body to a polishing table having attached thereto a polishing pad for polishing a substrate or a holding portion that is adapted to hold the substrate while pressing the substrate against the polishing pad. At least one elastic member is interposed at least either between the rotating body and the at least one bearing or between the housing and the at least one bearing.
Abstract:
A polishing apparatus includes a table rotating motor configured to rotate a polishing table about its own axis, a top ring rotating motor configured to rotate a top ring about its own axis, a dresser configured to dress a polishing pad, and a pad-height measuring device configured to measure a height of the polishing pad. The polishing apparatus also includes a diagnostic device configured to calculate an amount of wear of the polishing pad from the height of the polishing pad and to determine the end of a life of the polishing pad based on the amount of the wear of the polishing pad, the torque or current of the table rotating motor, and the torque or current of the top ring rotating motor.
Abstract:
A polishing apparatus includes a table rotating motor configured to rotate a polishing table about its own axis, a top ring rotating motor configured to rotate a top ring about its own axis, a dresser configured to dress a polishing pad, and a pad-height measuring device configured to measure a height of the polishing pad. The polishing apparatus also includes a diagnostic device configured to calculate an amount of wear of the polishing pad from the height of the polishing pad and to determine the end of a life of the polishing pad based on the amount of the wear of the polishing pad, the torque or current of the table rotating motor, and the torque or current of the top ring rotating motor.
Abstract:
A polishing head for chemical mechanical planarization is provided. The polishing head includes a housing and a flexible membrane secured to the housing. At least a first, second, and third pressurizable chamber are disposed in the housing and each chamber contacts the flexible membrane. A first pressure delivery channel couples to the first chamber. A second pressure delivery channel couples to the third chamber. A first pressure feed line couples the first pressure delivery channel to the second chamber. A second pressure feed line couples the second pressure delivery channel to the second chamber. A first manually movable plug interfaces with the first pressure feed line to allow or block pressure from the first pressure delivery channel to the second chamber. A second manually movable plug interfaces with the second pressure feed line to allow or block pressure from the first pressure delivery channel to the second chamber.
Abstract:
In a substrate processing method according to an embodiment, a surface of an object to be polished disposed on a substrate is polished on a polishing pad supplied with slurry. After the polishing process using the slurry, the surface of the object to be polished on the polishing pad is polished, while supplying water on the polishing pad where a residue including the slurry or a sludge of the polishing pad adhered. After the polishing process using the water, the surface of the object to be polished is cleaned on the polishing pad by supplying rinse liquid on the polishing pad.
Abstract:
A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.