公开(公告)号：US20240359285A1

公开(公告)日：2024-10-31

申请号：US18642234

申请日：2024-04-22

申请人： EBARA CORPORATION

发明人： Yuki WATANABE

IPC分类号： B24B37/013

CPC分类号： B24B37/013

摘要： A method capable of detecting a wrong workpiece (e.g., wafer), which is not an object to be polished, is disclosed. The method includes: creating inspection spectrum data of reflected light from a workpiece before polishing of the workpiece or after beginning of polishing of the workpiece; inputting the inspection spectrum data to an autoencoder; calculating a difference between output data from the autoencoder and the inspection spectrum data; and determining that, when the difference is larger than a threshold value, the workpiece used to create the inspection spectrum data is a wrong workpiece which is not an object to be polished.

公开(公告)号：US12131923B2

公开(公告)日：2024-10-29

申请号：US16175445

申请日：2018-10-30

申请人： EBARA CORPORATION

发明人： Yuta Suzuki ,  Taro Takahashi

IPC分类号： H01L21/67 ,  B24B29/04 ,  B24B37/013 ,  B24B37/10 ,  B24B49/10 ,  H01L21/306 ,  H01L21/66 ,  H01L21/677

CPC分类号： H01L21/67219 ,  B24B29/04 ,  B24B37/013 ,  B24B37/105 ,  B24B49/10 ,  H01L21/30625 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/67748 ,  H01L22/26

摘要： A current detection section detects a current value of a swing shaft motor 14 and generates a first output. A first processing section obtains a contact pressure corresponding to the first output from the first output using first data indicating a correspondence relationship between a contact pressure applied to a semiconductor wafer by a top ring and the first output. A second processing section obtains a second output corresponding to a contact pressure obtained by the first processing section using second data indicating a correspondence relationship between the contact pressure obtained by the first processing section and the second output.

公开(公告)号：US12094740B2

公开(公告)日：2024-09-17

申请号：US17212862

申请日：2021-03-25

申请人： Applied Materials, Inc.

发明人： Manoj A. Gajendra ,  Mahadev Joshi ,  Joseph Antony Jonathan ,  Jamie S. Leighton

IPC分类号： H01L21/67 ,  B08B3/02 ,  B08B5/02 ,  B08B13/00 ,  B24B37/013 ,  B24B37/34 ,  H01L21/02 ,  H01L21/306 ,  H01L21/66 ,  H01L21/687

CPC分类号： H01L21/67253 ,  B08B3/022 ,  B08B5/02 ,  B08B13/00 ,  B24B37/013 ,  B24B37/345 ,  H01L21/02057 ,  H01L21/30625 ,  H01L21/68707 ,  H01L22/12

摘要： A method and apparatus for polishing a substrate is disclosed herein. More specifically, the apparatus relates to an integrated CMP system for polishing substrates. The CMP system has a polishing station configured to polish substrates. A spin rinse dry (SRD) station configured to clean and dry the substrates. A metrology station configured to measure parameters of the substrates. A robot configured to move the substrate in to and out of the SRD station. And an effector rinse and dry (EERD) station configured to clean and dry an end effector of the robot.

公开(公告)号：US12090599B2

公开(公告)日：2024-09-17

申请号：US18365527

申请日：2023-08-04

申请人： Applied Materials, Inc.

发明人： Kun Xu ,  Benjamin Cherian ,  Jun Qian ,  Kiran Lall Shrestha

IPC分类号： B24B37/00 ,  B24B37/013 ,  G05B19/418 ,  G06N3/045 ,  G06N3/08 ,  H01L23/00

CPC分类号： B24B37/013 ,  G05B19/4188 ,  G06N3/045 ,  G06N3/08 ,  H01L23/00 ,  G05B2219/32335

摘要： A method of training a neural network includes obtaining two ground truth thickness profiles a test substrate, obtaining two thickness profiles for the test substrate as measured by an in-situ monitoring system while the test substrate is on polishing pads of different thicknesses, generating an estimated thickness profile for another thickness value that is between the two thickness values by interpolating between the two profiles, and training a neural network using the estimated thickness profile.

公开(公告)号：US12076830B2

公开(公告)日：2024-09-03

申请号：US18187786

申请日：2023-03-22

申请人： EBARA CORPORATION

发明人： Masashi Kabasawa

IPC分类号： B24B37/015 ,  B24B37/013 ,  B24B37/04

CPC分类号： B24B37/015 ,  B24B37/013 ,  B24B37/04 ,  B24B37/042

摘要： A polishing method capable of terminating polishing of a substrate, such as a wafer, at a preset polishing time is disclosed. The polishing method includes: polishing a substrate by pressing the substrate against a polishing surface of a polishing pad, while regulating a temperature of the polishing surface by a heat exchanger; calculating a target polishing rate required for an actual polishing time to coincide with a target polishing time, the actual polishing time being a time duration from start of polishing the substrate until a film thickness of the substrate reaches a target thickness; determining a target temperature of the polishing surface that can achieve the target polishing rate; and during polishing of the substrate, changing a temperature of the polishing surface to the target temperature by the heat exchanger.

公开(公告)号：US20240253176A1

公开(公告)日：2024-08-01

申请号：US18404443

申请日：2024-01-04

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： Yu-Chung SU ,  Hyunjin KIM

IPC分类号： B24B37/20 ,  B24B37/013

CPC分类号： B24B37/205 ,  B24B37/013

摘要： A polishing pad for chemical mechanical polishing comprising a porous polishing layer having a top polishing surface, a sub-pad located opposite from the top polishing surface, the sub-pad having a bottom sub-pad surface, and a window for transmitting a signal wave through the polishing pad to a substrate to be polished and back through the polishing pad for endpoint detection, the window having a top window surface, a bottom window surface, and side edges, wherein the top window surface is recessed from the top polishing surface, the bottom window surface is substantially coplanar with the bottom sub-pad surface, the window extending from the bottom sub-pad surface to the top window surface and the side edges are in contact with the polishing material and the sub-pad material and wherein the window is non-porous.

公开(公告)号：US12036635B2

公开(公告)日：2024-07-16

申请号：US17365848

申请日：2021-07-01

申请人： Applied Materials, Inc.

发明人： Jeonghoon Oh ,  Ashish Bhushan ,  Jamie Stuart Leighton ,  John Anthony Garcia ,  Stephen Thomas Cormier ,  Nick Joseph Jackson ,  Manoj Balakumar ,  Nandkishore Patidar

IPC分类号： B24B37/015 ,  B24B37/005 ,  B24B37/013 ,  B24B37/04 ,  B24B49/14 ,  B24B49/16

CPC分类号： B24B37/015 ,  B24B37/005 ,  B24B37/013 ,  B24B37/042 ,  B24B49/14 ,  B24B49/16

摘要： Embodiments of the present disclosure generally relate to chemical mechanical polishing systems (CMP) systems and processes used in the manufacturing of electronic devices. In particular, embodiments herein relate to methods of detecting non-conforming substrate processing events during a polishing process. In one embodiment, a method of processing a substrate on a polishing system includes urging a surface of a silicon carbide substrate against a polishing pad in the presence of a polishing fluid, determining a temperature of the polishing pad using a temperature sensor that is positioned above the platen, monitoring the temperature of the polishing pad, and, if the change in polishing pad temperature reaches a threshold value, initiating a response using a controller of the polishing system.

公开(公告)号：US20240227112A1

公开(公告)日：2024-07-11

申请号：US18225909

申请日：2023-07-25

申请人： Samsung Electronics Co., Ltd.

发明人： SEUNGJUN LEE ,  Jinoh Im ,  ILYOUNG YOON

IPC分类号： B24B37/013

CPC分类号： B24B37/013

摘要： A chemical mechanical polishing apparatus according to an example embodiment includes a polishing platen; a polishing pad which is located on the polishing platen and includes a polishing surface; a slurry supplier configured to supply a slurry to the polishing pad; a polishing head which is located above the polishing pad and configured to mount a wafer thereon; and an additional CMP process condition generator which generates an additional chemical mechanical polishing (CMP) process condition according to a type of residue when there is a residue on a wafer after a CMP process is performed on the wafer.

公开(公告)号：US12011800B2

公开(公告)日：2024-06-18

申请号：US17850228

申请日：2022-06-27

申请人： Bruker Nano Inc.

发明人： Vladimir Gulkov ,  Nikolay Yeremin

IPC分类号： B24B37/013 ,  B24B37/04 ,  B24B37/10 ,  B24B37/30 ,  B24B49/00 ,  B24B49/10

CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B37/046 ,  B24B37/107 ,  B24B37/30 ,  B24B49/006 ,  B24B49/10

摘要： Shortcomings associated with insufficient control of a conventional CMP-process are obviated by providing an CMP-apparatus configured to complement a constant force (to which a workpiece that is being polished is conventionally exposed) with a time-alternating force and/or means for measuring an electrical characteristic of the CMP-process. The time-alternating force is applied with the use of a system component that is electrically isolated from the workpiece and that is disposed in the carrier-chick in which the workpiece is affixed for CMP-process, while the electrical characteristic is measured with the use of a judiciously-configured reservoir in which the used fluid is collected. The use of such CMP-apparatus.

公开(公告)号：US20240165766A1

公开(公告)日：2024-05-23

申请号：US18509631

申请日：2023-11-15

申请人： DISCO CORPORATION

发明人： Mato HATTORI ,  Hironobu OZAWA

IPC分类号： B24B37/013

CPC分类号： B24B37/013

摘要： A grinding method of a workpiece includes a holding step of holding the workpiece on a holding surface of a chuck table, a grinding step of, after the holding step, measuring a thickness of the workpiece in a non-contact region other than a contact region between the workpiece and grinding stones while grinding the workpiece with a grinding wheel including the grinding stones, and a measurement step of, after the grinding step, relatively moving and separating the workpiece and the grinding stones from each other, and measuring the thickness of the workpiece in the contact region during or after the relative movement of the workpiece and the grinding stones.