Abstract:
A dressing apparatus includes a bus member which is equipped with a ceiling plate and a circular or polygonal cylindrical skirt portion provided at a bottom surface of the ceiling plate and which is configured to accommodate a polishing pad from thereabove. The bus member includes a dual fluid nozzle configured to jet a cleaning liquid and a gas onto a polishing surface of the polishing pad; a dress board configured to come into contact with the polishing surface of the polishing pad; and a rinse nozzle configured to supply a rinse liquid onto a contact surface between the polishing surface of the polishing pad and the dress board. A cleaning liquid, a fragment of a grindstone or a sludge is suppressed from being scattered around by the skirt portion.
Abstract:
A polishing method is used for polishing a surface of a substrate such as a semiconductor wafer. The polishing method includes a polishing process for polishing a surface of the substrate in accordance with a preset polishing recipe, a pad cleaning process for removing foreign matters on the polishing pad by ejecting a cleaning fluid onto the polishing pad, and a substrate transferring process in which the polished substrate is removed from the top ring at a substrate transferring position, a subsequent substrate to be polished is loaded onto the top ring, and then the top ring holding the subsequent substrate to be polished is returned to the polishing table. The pad cleaning process is started after the completion of the polishing recipe is detected, and the pad cleaning process is terminated by detecting a position of the subsequent substrate to be polished which is undergoing the substrate transferring process.
Abstract:
A space-saving centerless grinding machine having high operability is obtained by devising the configuration of component units around the basic configuration of the machine. A dressing means for performing a dressing process for a grinding wheel and a regulating wheel comprises a single dressing unit. The dressing unit is located at a lower position between the grinding wheel and the regulating wheel, and thus eliminates the need for right and left dresser spaces for grinding wheels that have most seriously affected the breadthwise dimension of a conventional centerless grinding machine, leading to space saving and a considerable reduction in the breadthwise dimension of the centerless grinding machine.
Abstract:
A system for use in substrate polishing includes a conditioner system for conditioning a surface of a polishing pad and a vacuum system having a vacuum port. The conditioner system includes a conditioner head constructed to receive an abrasive conditioner component. The vacuum system is configured to apply suction through the vacuum port to the surface of the polishing pad in a direction away from the surface to remove material on the surface.
Abstract:
In a substrate processing method according to an embodiment, a surface of an object to be polished disposed on a substrate is polished on a polishing pad supplied with slurry. After the polishing process using the slurry, the surface of the object to be polished on the polishing pad is polished, while supplying water on the polishing pad where a residue including the slurry or a sludge of the polishing pad adhered. After the polishing process using the water, the surface of the object to be polished is cleaned on the polishing pad by supplying rinse liquid on the polishing pad.
Abstract:
A carrier head and a method of cleaning the carrier head are disclosed. The carrier head may have one or more openings through a sidewall that extend into a cavity within the carrier head using a fluid passage. The openings may each have a lip. The lip may have a chamfered edge. Additionally, a fluid passage may slope generally downward from the openings to the cavity. The chamfered lips and the sloped fluid passage reduce back splashing and help ensure that sufficient rinsing fluid reaches the cavity to rinse polishing fluid and particles from the carrier head. The present invention relates to carrier heads for polishing or planarizing semiconductor substrates by chemical mechanical polishing (CMP) or electrochemical mechanical polishing (ECMP). The cavities in the carrier head are cleaned by rinsing fluid (i.e., liquid or gas) from inside the cavity towards a substrate receiving side of the carrier head.
Abstract:
Embodiments of a flexible pad conditioner for conditioning a processing pad are provided. The pad conditioner includes an arc-shaped member having an abrasive bottom surface configured for conditioning the processing pad. Means are provided to apply a downward force as well as to oscillate the pad conditioner. Further means may be provided to vary the downward force along the length of the pad conditioner. In one embodiment, a plurality of actuators may be coupled to a top surface of the member and adapted to selectively provide an independently controllable force against the member to finely control the conditioning profile.
Abstract:
A pad conditioner of wafer planarization equipment includes a linear driving device for moving a disk holder up and down using a magnetic force. The linear driving device has an electromagnet, a permanent magnet, and a controller. The controller controls the power supplied to the electromagnet such that the electromagnet and permanent magnet produce a force of attraction and/or repulsion used to move the disk holder relative to a polishing pad of the wafer planarization equipment.
Abstract:
A pad conditioning system for conditioning a polishing pad in conjunction with a workpiece polishing operation includes a pad conditioning head coupled with a positioning unit. The pad conditioning head includes a plurality of abrasive particles protruding from a surface of the pad conditioning head. The positioning unit is configured to move the surface into contact with a polishing pad. The pad conditioning system also includes a liquid supply nozzle. The liquid supply nozzle is configured to selectively discharge liquid proximate to the abrasive particles that are in contact with the polishing pad to minimize frictional wear of the abrasive particles.
Abstract:
The polishing pad is useful for polishing a surface of an electronic substrate. The pad comprises a polymeric matrix and polymeric microelements within the polymeric matrix. The polymeric microelements have a mean diameter of less than 150 μm (0.0059″). The pad has grooves forming artifacts and a depth less than 2000 times the mean diameter of the polymeric microelements; and the artifacts are spaced apart 0.1 to 10 mm (0.0039″ to 0.39″) and have a width of 1 to 5 mm (0.039″ to 0.20″).