- 专利标题： Semiconductor Device Structure with Interconnect Structure and Method for Forming the Same
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申请号： US17869560申请日： 2022-07-20
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公开(公告)号： US20220367257A1公开(公告)日： 2022-11-17
- 发明人: Chun-Hao Kung , Chih-Chieh Chang , Kao-Feng Liao , Hui-Chi Huang , Kei-Wei Chen
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.
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