公开(公告)号：US10522365B2

公开(公告)日：2019-12-31

申请号：US15182291

申请日：2016-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Chun Pan ,  William Weilun Hong ,  Ying-Tsung Chen

IPC: H01L21/3105 ,  H01L21/02 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/84

Abstract: Disclosed is a method of forming a semiconductor device. The method includes providing a precursor having a substrate and protrusions over the substrate. The protrusions are interposed by trenches. The method further includes depositing a first dielectric layer over the protrusions and filling the trenches. The first dielectric layer has a first hardness. The method further includes treating the first dielectric layer with an oxidizer. The method further includes performing a chemical mechanical planarization (CMP) process to the first dielectric layer.

公开(公告)号：US20240387187A1

公开(公告)日：2024-11-21

申请号：US18787026

申请日：2024-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Chun Pan ,  William Weilun Hong ,  Ying-Tsung Chen

IPC: H01L21/3105 ,  H01L21/02 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/84

Abstract: Disclosed is a method of forming a semiconductor device. The method includes providing a precursor having a substrate and protrusions over the substrate. The protrusions are interposed by trenches. The method further includes depositing a first dielectric layer over the protrusions and filling the trenches. The first dielectric layer has a first hardness. The method further includes treating the first dielectric layer with an oxidizer. The method further includes performing a chemical mechanical planarization (CMP) process to the first dielectric layer.

公开(公告)号：US12030159B2

公开(公告)日：2024-07-09

申请号：US18334526

申请日：2023-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Kai Chen ,  Shang-Yu Wang ,  Wan-Chun Pan ,  Zink Wei ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: B24B49/12 ,  B24B37/12 ,  B24B37/20 ,  B24B53/017 ,  G01N21/64

CPC classification number: B24B49/12 ,  B24B37/12 ,  B24B37/20 ,  B24B53/017 ,  G01N21/6456

Abstract: A method of operating a chemical mechanical planarization (CMP) tool includes attaching a polishing pad to a first surface of a platen of the CMP tool using a glue; removing the polishing pad from the platen, wherein after removing the polishing pad, residue portions of the glue remain on the first surface of the platen; identifying locations of the residue portions of the glue on the first surface of the platen using a fluorescent material; and removing the residue portions of the glue from the first surface of the platen.

公开(公告)号：US20230321789A1

公开(公告)日：2023-10-12

申请号：US18334526

申请日：2023-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung-Kai Chen ,  Shang-Yu Wang ,  Wan-Chun Pan ,  Zink Wei ,  Hui-Chi Huang ,  Kei-Wei Chen

IPC: B24B49/12 ,  G01N21/64 ,  B24B53/017 ,  B24B37/20 ,  B24B37/12

CPC classification number: B24B49/12 ,  G01N21/6456 ,  B24B53/017 ,  B24B37/20 ,  B24B37/12

Abstract: A method of operating a chemical mechanical planarization (CMP) tool includes attaching a polishing pad to a first surface of a platen of the CMP tool using a glue; removing the polishing pad from the platen, wherein after removing the polishing pad, residue portions of the glue remain on the first surface of the platen; identifying locations of the residue portions of the glue on the first surface of the platen using a fluorescent material; and removing the residue portions of the glue from the first surface of the platen.

公开(公告)号：US20170213743A1

公开(公告)日：2017-07-27

申请号：US15182291

申请日：2016-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Chun Pan ,  William Weilun Hong ,  Ying-Tsung Chen

IPC: H01L21/3105 ,  H01L21/02

CPC classification number: H01L21/31051 ,  H01L21/02164 ,  H01L21/02205 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/3105 ,  H01L21/31053 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/845

Abstract: Disclosed is a method of forming a semiconductor device. The method includes providing a precursor having a substrate and protrusions over the substrate. The protrusions are interposed by trenches. The method further includes depositing a first dielectric layer over the protrusions and filling the trenches. The first dielectric layer has a first hardness. The method further includes treating the first dielectric layer with an oxidizer. The method further includes performing a chemical mechanical planarization (CMP) process to the first dielectric layer.

公开(公告)号：US20230377898A1

公开(公告)日：2023-11-23

申请号：US18364614

申请日：2023-08-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Chun Pan ,  William Weilun Hong ,  Ying-Tsung Chen

IPC: H01L21/3105 ,  H01L21/02 ,  H01L21/8234 ,  H01L21/762

CPC classification number: H01L21/31051 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/3105 ,  H01L21/31053 ,  H01L21/823481 ,  H01L21/823431 ,  H01L21/76224 ,  H01L21/02164 ,  H01L21/02205 ,  H01L21/02323 ,  H01L21/845

Abstract: Disclosed is a method of forming a semiconductor device. The method includes providing a precursor having a substrate and protrusions over the substrate. The protrusions are interposed by trenches. The method further includes depositing a first dielectric layer over the protrusions and filling the trenches. The first dielectric layer has a first hardness. The method further includes treating the first dielectric layer with an oxidizer. The method further includes performing a chemical mechanical planarization (CMP) process to the first dielectric layer.