Abstract:
A polishing table holds a polishing pad. A top ring holds a semiconductor wafer. A swing arm holds the top ring. The swing arm swings around a swing center on the swing arm during polishing. An optical sensor is disposed on the polishing table and measures an optical characteristic changeable in accordance with a variation in film thickness of the semiconductor wafer. A fluid supply control apparatus determines a distance from an axis of rotation to the optical sensor when the semiconductor wafer is rotated by the top ring. An end point detection section detects a polishing end point indicating an end of polishing based on the optical characteristic measured by the optical sensor and the determined distance.
Abstract:
A polishing apparatus according to an embodiment includes a polishing table; a polishing pad provided on the polishing table; a first rotating mechanism configured to rotate the polishing table on a first rotation axis; a substrate holding unit configured to hold a substrate and press the substrate against the polishing pad; a second rotating mechanism configured to rotate the substrate holding unit on a second rotation axis; and a tilting mechanism configured to change an angle between the first rotation axis and the second rotation axis. In the apparatus, the circumferential edge of the substrate is always kept inside the circumferential edge of the polishing pad during polishing of the substrate.
Abstract:
Provided are a chemical mechanical polishing apparatus and a control method thereof. The chemical mechanical polishing apparatus includes a plurality of polishing platens provided with a polishing pad on an upper surface thereof, and a polishing platen transferring unit for transferring the plurality of polishing platens to different process positions according to a predetermined process sequence. Here, different processes are performed at different process positions.
Abstract:
A table for a wafer polishing apparatus having superior heat-resistant, anti-thermal-shock, and anti-abrasion characteristics and capable of increasing the diameter of a semiconductor wafer while improving the quality of the wafer. The table includes a plurality of superimposed bases each of which is formed of silicide ceramic or carbide ceramic. The bases are joined together by an adhesive layer. A fluid passage is formed in a joining interface between the bases.
Abstract:
The present disclosure relates to a chemical mechanical polishing apparatus used for polishing wafers. The apparatus includes a polish platen and structure for separating the platen into at least first and second zones such that polishing fluid used in the first zone is prevented from entering the second zone.
Abstract:
A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.
Abstract:
A system for polishing a semiconductor wafer, the system comprising a platen subassembly defining a polishing area; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and means for heating the wafer while the wafer face is being polished.
Abstract:
A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, a slurry supply system delivering a slurry to the polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly; and an optical measurement system measuring film thickness at multiple different locations on the wafer face while the wafer is under a liquid, wherein drying of the wafer is avoided while the measurements are taken.
Abstract:
The present invention uses a surface plate 8 made of carbon fiber reinforced plastics which is installed on a turntable 4, and an emery cloth 6 is adhered on the surface of the surface plate 8. This surface plate 8 is detachably installed on the turntable 4 by means of key blocks 22 or screws 26. If the turntable 4 is made of carbon fiber reinforced plastics, the entire weight of a polishing machine can be reduced.
Abstract:
A polishing plate wherein the arcs cut in the soft parts by a circle whose radius is equal to approximately half that of the disk and whose center is at a distance from that of the disk equal to half the radius of the disk have a length between 0.5 and 5 mm.