公开(公告)号：US12214468B2

公开(公告)日：2025-02-04

申请号：US16189968

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Haosheng Wu ,  Hari Soundararajan ,  Yen-Chu Yang ,  Jianshe Tang ,  Shou-Sung Chang ,  Shih-Haur Shen ,  Taketo Sekine

IPC: B24B49/14 ,  B24B37/015 ,  B24B37/10 ,  B24B49/02 ,  B24B49/04 ,  B24B55/02 ,  B24B57/02

Abstract: A chemical mechanical polishing system includes a support to hold a polishing pad, a carrier head to hold a substrate against the polishing pad during a polishing process, an in-situ monitoring system configured to generate a signal indicative of an amount of material on the substrate, a temperature control system to control a temperature of the polishing process, and a controller coupled to the in-situ monitoring system and the temperature control system. The controller is configured to cause the temperature control system to vary the temperature of the polishing process in response to the signal.

公开(公告)号：US20240424638A1

公开(公告)日：2024-12-26

申请号：US18752391

申请日：2024-06-24

Applicant: Outer Woods LLC

Inventor： Tanner Rowley

IPC: B24B51/00 ,  B24B23/00 ,  B24B47/20 ,  B24B49/02

Abstract: Methods and systems are described herein for surface treatment operations using an autonomous sander system (“system”). The system may include a drive system operatively coupled to a chassis, so that the drive system is able to propel the autonomous sander system across a workpiece. The system may include a processor coupled to the autonomous sander system and area-monitoring sensors so that the processor may direct the system to perform a sanding operation based on information gathered from the surrounding environment by the sensors. The system performs the sanding operation by obtaining a surface treatment command that includes a threshold condition; obtaining workpiece assessment data from the sensors based on the command; directing the system to execute the sanding operation; directing the drive system to propel the sander along a desired path; and terminating the operation if a threshold condition is met.

公开(公告)号：US12064848B2

公开(公告)日：2024-08-20

申请号：US17168540

申请日：2021-02-05

Applicant: Skatescribe Corporation

Inventor： Nathan Chan ,  Steve Martin ,  Jamie A. Gonzalez ,  Emidio Di Pietro ,  Tony Di Pietro

IPC: B24B3/00 ,  A63C3/10 ,  B23Q17/09 ,  B23Q17/20 ,  B23Q17/24 ,  B24B9/04 ,  B24B49/02 ,  B24B49/12 ,  G01B11/25 ,  G01B21/20 ,  A63C1/32 ,  B23Q11/00

CPC classification number: B24B49/02 ,  A63C3/10 ,  B23Q17/0909 ,  B23Q17/2471 ,  B24B3/00 ,  B24B3/003 ,  B24B9/04 ,  B24B49/12 ,  G01B11/2518 ,  A63C1/32 ,  B23Q11/0046 ,  B23Q17/20 ,  G01B21/20

Abstract: An ice blade measuring system comprises a holder for holding an ice blade in a measurement position, and a non-contact measuring device operationally positioned relative to the holder to measure at least a three-dimensional (3D) shape of an ice contacting surface of the ice blade held in the holder. The non-contact measuring device is configured to create a dataset which corresponds to the measured 3D shape. The system further comprises a data storage means operatively connected to the non-contact measuring device to record the measured dataset.

公开(公告)号：US20230025120A1

公开(公告)日：2023-01-26

申请号：US17811969

申请日：2022-07-12

Applicant: DISCO CORPORATION

Inventor： Daisuke AKITA ,  Makoto SAITO ,  Takashi YAMAGUCHI

IPC: B24B1/00 ,  B24B7/04 ,  B24B41/00 ,  B24B49/02

Abstract: A hard wafer grinding method includes a rough grinding step of forming a section along the diameter of a hard wafer into a centrally recessed shape by roughly grinding the hard wafer such that a central part of the hard wafer is thinner than a peripheral part of the hard wafer, a finish grinding step of expanding a ground area of the hard wafer from the peripheral part in an annular shape to the central part while dressing lower surfaces of finish grinding stones by the peripheral part of the hard wafer of the centrally recessed shape after the rough grinding, then setting the whole of a radius part of the hard wafer as the ground area, and further finish-grinding the hard wafer so as to obtain a predetermined thickness.

公开(公告)号：US11524386B2

公开(公告)日：2022-12-13

申请号：US16829282

申请日：2020-03-25

Applicant: DISCO CORPORATION

Inventor： Souichi Matsubara ,  Tetsuo Kubo ,  Shinji Yamashita

IPC: B24B49/04 ,  B24B41/00 ,  B24B5/50 ,  B24B7/22 ,  H01L21/304 ,  B24B49/02

Abstract: A grinding apparatus including a chuck table for holding a wafer, a grinding unit having a spindle for rotating a grinding wheel, an inclination adjusting unit for adjusting the inclination of the rotation axis of the chuck table with respect to the rotation axis of the spindle, a touch panel, and a control portion. The control portion is adapted to compare the information regarding the target sectional shape input into a target shape input field with the information regarding the present sectional shape input into a present shape input field and then control the inclination adjusting unit to change the inclination of the rotation axis of the chuck table so that the wafer is ground to obtain the target sectional shape of the wafer.

公开(公告)号：US20220226964A1

公开(公告)日：2022-07-21

申请号：US17571626

申请日：2022-01-10

Applicant: RÕster Holding GmbH

Inventor： Marco Liske ,  Alexander Then ,  Franziska Taubert ,  Stefan Thomann ,  Rudiger BÕhm ,  Christian HÕhn ,  Marcus Henkel ,  Conrad Schulz

IPC: B24B49/08 ,  B24B49/00 ,  B24B49/14 ,  B24B49/02 ,  B24B31/06

Abstract: In a method of monitoring a vibratory grinding process, parameters from different parameter groups are detected and evaluated to output a command for operating the vibratory grinding system.

公开(公告)号：US10399203B2

公开(公告)日：2019-09-03

申请号：US15304829

申请日：2015-04-10

Applicant: EBARA CORPORATION

Inventor： Yoichi Kobayashi ,  Keita Yagi ,  Masaki Kinoshita ,  Yoichi Shiokawa

IPC: B24B49/05 ,  B24B49/02 ,  B24B49/04 ,  B24B37/013 ,  B24B37/10 ,  B24B37/32 ,  B24B37/34 ,  H01L21/66 ,  B24B49/03 ,  B24B49/12 ,  H01L21/67

Abstract: The present invention relates to a polishing method and a polishing apparatus for polishing a substrate such as a wafer while measuring a film thickness based on optical information included in reflected light from the substrate. The polishing method includes preparing a plurality of spectrum groups each containing a plurality of reference spectra corresponding to different film thicknesses; directing light to a substrate and receiving reflected light from the substrate; producing, from the reflected light, a sampling spectrum for selecting a spectrum group; selecting a spectrum group containing a reference spectrum which is closest in shape to the sampling spectrum; producing a measurement spectrum for obtaining a film thickness while polishing the substrate; selecting, from the selected spectrum group, a reference spectrum which is closest in shape to the measurement spectrum that has been produced when the substrate is being polished; and obtaining a film thickness corresponding to the selected reference spectrum.

公开(公告)号：US09962808B2

公开(公告)日：2018-05-08

申请号：US15554114

申请日：2017-02-07

Applicant: AMATSUJI STEEL BALL MFG. CO., LTD.

Inventor： Hiroshi Nishide ,  Kenta Kadotani

IPC: B24B49/00 ,  B24B49/02 ,  B24B11/06

CPC classification number: B24B49/02 ,  B24B11/06

Abstract: A sphere size measuring unit (15) measures respective diameters of an object sphere in the course of processing and a standard sphere made of the same material as that of the object sphere and furthermore having a target diameter of the object sphere. A size difference calculation unit (161) calculates a size difference between the diameter of the object sphere and the diameter of the standard sphere. A determination unit (162) compares the obtained size difference with a threshold value so as to determine whether or not the diameter of the object sphere reaches the target value.

公开(公告)号：US09962803B2

公开(公告)日：2018-05-08

申请号：US14443482

申请日：2013-11-01

Applicant: HOYA CORPORATION

Inventor： Takahiro Suzue ,  Tsukasa Sato

IPC: B24B9/14 ,  B24B49/02

CPC classification number: B24B9/148 ,  B24B49/02

Abstract: A lens edging system includes: an edger configured to perform edging to a spectacle lens in accordance with three-dimensional edging locus data obtained from edging shape data by calculation; a three-dimensional circumferential length measurement device configured to measure a circumferential length of the spectacle lens edged by the edger; and an edging size management device configured to correct a calculation parameter used for calculating the edging locus data, based on a difference between a measured circumferential length obtained by a three-dimensional circumferential length measurement device, and a theoretical circumferential length obtained by calculation.

公开(公告)号：US09636797B2

公开(公告)日：2017-05-02

申请号：US14179297

申请日：2014-02-12

Applicant: Applied Materials, Inc.

Inventor： Kun Xu ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Doyle E. Bennett ,  Shih-Haur Shen ,  Hassan G Iravani ,  Wen-Chiang Tu ,  Tzu-Yu Liu

IPC: B24B49/10 ,  B24B49/14 ,  B24B49/02 ,  B24B37/013

CPC classification number: B24B49/105 ,  B24B37/013 ,  B24B49/02 ,  B24B49/04 ,  B24B49/14

Abstract: Among other things, a method of controlling polishing during a polishing process is described. The method includes receiving a measurement of a thickness, thick(t), of a conductive layer of a substrate undergoing polishing from an in-situ monitoring system at a time t; receiving a measured temperature, T(t), associated with the conductive layer at the time t; calculating resistivity ρT of the conductive layer at the measured temperature T(t); adjusting the measurement of the thickness using the calculated resistivity ρT to generate an adjusted measured thickness; and detecting a polishing endpoint or an adjustment for a polishing parameter based on the adjusted measured thickness.