公开(公告)号：US11862472B2

公开(公告)日：2024-01-02

申请号：US17893955

申请日：2022-08-23

申请人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.

发明人： Xiaohong Zhou

IPC分类号： H01L21/3105 ,  B24B1/00 ,  B24B37/04 ,  C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09G1/06 ,  C09K3/14 ,  C09K13/06 ,  H01L21/306 ,  H01L21/321

CPC分类号： H01L21/31053 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1454 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/3212

摘要： Methods for polishing dielectric layers using an auto-stop slurry in forming semiconductor devices, such as three-dimensional (3D) memory devices, are provided. The methods include forming a stack structure in a staircase region and a core array region, the stack structure including a staircase structure in the staircase region; forming a dielectric layer over the staircase region and a peripheral region outside the stack structure; and polishing the dielectric layer using an auto-stop slurry containing a ceria-based abrasive.

公开(公告)号：US20220406612A1

公开(公告)日：2022-12-22

申请号：US17893955

申请日：2022-08-23

申请人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.

发明人： Xiaohong Zhou

IPC分类号： H01L21/3105 ,  B24B1/00 ,  B24B37/04 ,  C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09G1/06 ,  C09K3/14 ,  C09K13/06 ,  H01L21/306 ,  H01L21/321

摘要： Methods for polishing dielectric layers using an auto-stop slurry in forming semiconductor devices, such as three-dimensional (3D) memory devices, are provided. The methods include forming a stack structure in a staircase region and a core array region, the stack structure including a staircase structure in the staircase region; forming a dielectric layer over the staircase region and a peripheral region outside the stack structure; and polishing the dielectric layer using an auto-stop slurry containing a ceria-based abrasive.

公开(公告)号：US11492514B2

公开(公告)日：2022-11-08

申请号：US17123295

申请日：2020-12-16

申请人： CMC Materials, Inc.

发明人： Na Zhang ,  David Bailey ,  Kevin P. Dockery ,  Roman A. Ivanov ,  Deepak Shukla

IPC分类号： C09G1/02 ,  C08G69/48 ,  H01L21/3105 ,  H01L21/321 ,  C09G1/04 ,  C09G1/06 ,  B24B1/00 ,  B24B37/04 ,  C09K3/14 ,  C09G1/00 ,  H01L21/306 ,  C09K13/06 ,  C08G69/10

摘要： A composition comprises, consists of, or consists essentially of a polymer including a derivatized amino acid monomer unit. A chemical mechanical polishing composition includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, and a cationic polymer having a derivatized amino acid monomer unit. A method of chemical mechanical polishing includes utilizing the chemical mechanical polishing composition to remove at least a portion of a metal or dielectric layer from a substrate and thereby polish the substrate.

公开(公告)号：US11370939B2

公开(公告)日：2022-06-28

申请号：US17006236

申请日：2020-08-28

申请人： AGC Inc.

发明人： Tomohiro Shibuya

IPC分类号： C09G1/04 ,  C03C15/02 ,  C09G1/14 ,  H01L21/306 ,  C09K3/14 ,  H01L21/321 ,  C09G1/00 ,  C09K13/06 ,  C09G1/06 ,  B82Y30/00

摘要： Smoothness of glass is improved. A polishing slurry (A) contains amorphous carbon and water, and a total amount of the amorphous carbon and the water is equal to or more than 90% of the whole polishing slurry in terms of mass ratio.

公开(公告)号：US20220195246A1

公开(公告)日：2022-06-23

申请号：US17688869

申请日：2022-03-07

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Hung Liao ,  An-Hsuan Lee ,  Shen-Nan Lee ,  Teng-Chun Tsai ,  Chen-Hao Wu ,  Huang-Lin Chao

IPC分类号： C09G1/02 ,  H01L21/8238 ,  H01L21/321 ,  H01L21/306 ,  C09K3/14 ,  C09G1/06 ,  C09G1/00 ,  C09K13/06 ,  C09G1/04 ,  B24B1/00 ,  B24B37/04

摘要： A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.

公开(公告)号：US11292938B2

公开(公告)日：2022-04-05

申请号：US16567064

申请日：2019-09-11

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： Murali Ganth Theivanayagam ,  Matthew Richard Van Hanehem ,  Yi Guo

IPC分类号： C09G1/02 ,  C09G1/18 ,  C09K3/14 ,  H01L21/306 ,  B24B37/04 ,  H01L21/321 ,  C09G1/04 ,  C09G1/00 ,  B24B1/00 ,  C09G1/06 ,  C09K13/06

摘要： A process for chemical mechanical polishing a substrate containing cobalt, zirconium oxide, poly-silicon and silicon dioxide, wherein the cobalt, zirconium, and poly-silicon removal rates are selective over silicon dioxide. The chemical mechanical polishing composition includes water, a benzyltrialkyl quaternary ammonium compound, cobalt chelating agent, corrosion inhibitor, colloidal silica abrasive, optionally a biocide and optionally a pH adjusting agent, and a pH greater than 7, and the chemical mechanical polishing compositions are free of oxidizing agents.

公开(公告)号：US11203703B2

公开(公告)日：2021-12-21

申请号：US16247730

申请日：2019-01-15

申请人： SAMSUNG DISPLAY CO., LTD. ,  UBmaterials Inc.

发明人： Hyunjin Cho ,  Joonhwa Bae ,  Byoungkwon Choo ,  Woojin Cho ,  Jinhyung Park

IPC分类号： H01L21/321 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/302 ,  C09K3/14 ,  C09G1/04 ,  C09G1/02 ,  C09G1/00 ,  B24B37/04

摘要： A polishing slurry includes an abrasive material, a first oxide polishing promoter, a first nitride polishing inhibitor, and a second nitride polishing inhibitor. The first oxide polishing promoter includes a polymer-based oxide polishing promoter. The first nitride polishing inhibitor includes an anionic nitride polishing inhibitor. The second nitride polishing inhibitor includes at least one selected from a cationic nitride polishing inhibitor and a non-ionic nitride polishing inhibitor.

公开(公告)号：US11168239B2

公开(公告)日：2021-11-09

申请号：US16860793

申请日：2020-04-28

申请人： BASF SE

发明人： Robert Reichardt ,  Martin Kaller ,  Michael Lauter ,  Yuzhuo Li ,  Andreas Klipp

IPC分类号： H01L21/461 ,  H01L21/321 ,  H01L21/306 ,  H01L21/304 ,  H01L21/02 ,  C09K3/14 ,  C09G1/04 ,  C09G1/02 ,  C09G1/00

摘要： A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

公开(公告)号：US20210261824A1

公开(公告)日：2021-08-26

申请号：US17318421

申请日：2021-05-12

申请人： AGC INC.

发明人： Toshihiko Otsuki

IPC分类号： C09G1/02 ,  H01L21/321 ,  C09G1/00 ,  C09G1/06 ,  C09K3/14 ,  C09G1/04 ,  C09K13/06 ,  B24B37/04 ,  B24B1/00 ,  H01L21/306 ,  H01L21/3105

摘要： The present invention relates to a polishing agent including: a water-soluble polymer including a copolymer of a monomer (A) which includes at least one member selected from the group consisting of an unsaturated dicarboxylic acid, a derivative thereof, and salts of the unsaturated dicarboxylic acid and the derivative thereof and a monomer (B) other than the monomer (A), comprising an ethylenic double bond and no acidic group; a cerium oxide particle; and water, in which the polishing agent has a pH of 4 to 9.

公开(公告)号：US11091694B2

公开(公告)日：2021-08-17

申请号：US16579073

申请日：2019-09-23

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Jonghee Park ,  Kitae Kim ,  Jinseock Kim ,  Gyu-Po Kim ,  Hyun-Cheol Shin ,  Dae-Woo Lee ,  Sang-Hyuk Lee ,  Zheng Hong

IPC分类号： C09K13/06 ,  C23F1/16 ,  C09G1/00 ,  H01L21/3213

摘要： An etching composition includes an inorganic acid compound, a carboxylic acid compound, a sulfonic acid compound, a glycol compound, a nitrogen-containing dicarbonyl compound, a sulfate compound and water.