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公开(公告)号：US11688607B2
公开(公告)日：2023-06-27
申请号：US16940287
申请日：2020-07-27
发明人： Chun-Hung Liao , Chung-Wei Hsu , Tsung-Ling Tsai , Chen-Hao Wu , An-Hsuan Lee , Shen-Nan Lee , Teng-Chun Tsai , Huang-Lin Chao
IPC分类号： H01L21/3105 , C09K3/14 , H01L21/306 , C09G1/02 , H01L21/3063 , H01L21/311 , H01L21/02 , C23F1/12
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C23F1/12 , H01L21/02019 , H01L21/3063 , H01L21/30625 , H01L21/31055 , H01L21/31111
摘要： The present disclosure provides a slurry. The slurry includes an abrasive including a ceria compound; a removal rate regulator to adjust removal rates of the slurry to metal and to dielectric material; and a buffering agent to adjust a pH value of the slurry, wherein the slurry comprises a dielectric material removal rate higher than a metal oxide removal rate.
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公开(公告)号：US10727076B2
公开(公告)日：2020-07-28
申请号：US16170539
申请日：2018-10-25
发明人： Chun-Hung Liao , Chung-Wei Hsu , Tsung-Ling Tsai , Chen-Hao Wu , Chu-An Lee , Shen-Nan Lee , Teng-Chun Tsai , Huang-Lin Chao
IPC分类号： G09G1/02 , C09K3/14 , C23F1/12 , H01L21/02 , H01L21/306 , H01L21/3063 , H01L21/3105 , H01L21/311 , C09G1/02
摘要： The present disclosure provides a method for planarizing a metal-dielectric surface. The method includes: providing a slurry to a first metal-dielectric surface, wherein the first metal-dielectric surface comprises a silicon oxide portion and a metal portion, and wherein the slurry comprises a ceria compound; and performing a chemical mechanical polish (CMP) operation using the slurry to simultaneously remove the silicon oxide portion and the metal portion. The present disclosure also provides a method for planarizing a metal-dielectric surface and a method for manufacturing a semiconductor.
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公开(公告)号：US20240327677A1
公开(公告)日：2024-10-03
申请号：US18733763
申请日：2024-06-04
发明人： Chun-Hung Liao , An-Hsuan Lee , Shen-Nan Lee , Teng-Chun Tsai , Chen-Hao Wu , Huang-Lin Chao
IPC分类号： C09G1/02 , B24B1/00 , B24B37/04 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/14 , C09K13/06 , H01L21/306 , H01L21/321 , H01L21/8238
CPC分类号： C09G1/02 , B24B1/00 , B24B37/044 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1454 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/3212 , H01L21/823828
摘要： A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.
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公开(公告)号：US12024651B2
公开(公告)日：2024-07-02
申请号：US17688869
申请日：2022-03-07
发明人： Chun-Hung Liao , An-Hsuan Lee , Shen-Nan Lee , Teng-Chun Tsai , Chen-Hao Wu , Huang-Lin Chao
IPC分类号： C09G1/02 , B24B1/00 , B24B37/04 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/14 , C09K13/06 , H01L21/306 , H01L21/321 , H01L21/8238
CPC分类号： C09G1/02 , B24B1/00 , B24B37/044 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1454 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/3212 , H01L21/823828
摘要： A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.
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公开(公告)号：US20220195246A1
公开(公告)日：2022-06-23
申请号：US17688869
申请日：2022-03-07
发明人： Chun-Hung Liao , An-Hsuan Lee , Shen-Nan Lee , Teng-Chun Tsai , Chen-Hao Wu , Huang-Lin Chao
IPC分类号： C09G1/02 , H01L21/8238 , H01L21/321 , H01L21/306 , C09K3/14 , C09G1/06 , C09G1/00 , C09K13/06 , C09G1/04 , B24B1/00 , B24B37/04
摘要： A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.
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公开(公告)号：US11312882B2
公开(公告)日：2022-04-26
申请号：US17020411
申请日：2020-09-14
发明人： Kuo-Yin Lin , Wen-Kuei Liu , Teng-Chun Tsai , Shen-Nan Lee , Kuo-Cheng Lien , Chang-Sheng Lin , Yu-Wei Chou
IPC分类号： C09G1/14 , C09G1/18 , C09G1/02 , C09G1/04 , H01L21/027 , H01L21/3105 , H01L21/311
摘要： A slurry solution for a Chemical Mechanical Polishing (CMP) process includes a wetting agent, a stripper additive that comprises at least one of: N-methyl-2-pyrrolidone (NMP), dimethyl sulfoxide (DMSO), sulfolane, and dimethylformamide (DMF), and an oxidizer additive comprising at least one of: hydrogen peroxide (H2O2), ammonium persulfate ((NH4)2S2O8), peroxymonosulfuric acid (H2SO5), ozone (O3) in de-ionized water, and sulfuric acid (H2SO4).
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公开(公告)号：US20190164817A1
公开(公告)日：2019-05-30
申请号：US16112122
申请日：2018-08-24
发明人： Mrunal A Khaderbad , Yasutoshi Okuno , Sung-Li Wang , Pang-Yen Tsai , Shen-Nan Lee , Teng-Chun Tsai
IPC分类号： H01L21/768 , H01L29/66 , H01L21/285 , H01L21/02 , H01L21/311
摘要： A semiconductor device and a method of forming the same are provided. A method includes forming a gate over a semiconductor structure. An epitaxial source/drain region is formed adjacent the gate. A dielectric layer is formed over the epitaxial source/drain region. An opening extending through the dielectric layer and exposing the epitaxial source/drain region is formed. A conductive material is non-conformally deposited in the opening. The conductive material fills the opening in a bottom-up manner.
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公开(公告)号：US10160091B2
公开(公告)日：2018-12-25
申请号：US14942582
申请日：2015-11-16
发明人： Te-Chien Hou , Ching-Hong Jiang , Kuo-Yin Lin , Ming-Shiuan She , Shen-Nan Lee , Teng-Chun Tsai , Yung-Cheng Lu
摘要： An apparatus for performing chemical mechanical polish on a wafer includes a polishing head that includes a retaining ring. The polishing head is configured to hold the wafer in the retaining ring. The retaining ring includes a first ring having a first hardness, and a second ring encircled by the first ring, wherein the second ring has a second hardness smaller than the first hardness.
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公开(公告)号：US20170136602A1
公开(公告)日：2017-05-18
申请号：US14942582
申请日：2015-11-16
发明人： Te-Chien Hou , Ching-Hong Jiang , Kuo-Yin Lin , Ming-Shiuan She , Shen-Nan Lee , Teng-Chun Tsai , Yung-Cheng Lu
摘要： An apparatus for performing chemical mechanical polish on a wafer includes a polishing head that includes a retaining ring. The polishing head is configured to hold the wafer in the retaining ring. The retaining ring includes a first ring having a first hardness, and a second ring encircled by the first ring, wherein the second ring has a second hardness smaller than the first hardness.
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公开(公告)号：US20150307747A1
公开(公告)日：2015-10-29
申请号：US14261644
申请日：2014-04-25
发明人： Kuo-Yin Lin , Wen-Kuei Liu , Teng-Chun Tsai , Shen-Nan Lee , Kuo-Cheng Lien , Chang-Sheng Lin , Yu-Wei Chou
CPC分类号： C09G1/14 , C09G1/02 , C09G1/04 , C09G1/18 , H01L21/0273 , H01L21/31055 , H01L21/31058 , H01L21/31133
摘要： A method for performing a Chemical Mechanical Polishing (CMP) process includes applying a CMP slurry solution to a surface of a hardened fluid material on a substrate, the solution comprising an additive to change a bonding structure on the surface of the hardened fluid material. The method further includes polishing the surface of the hardened fluid material with a polishing head.
摘要翻译： 执行化学机械抛光（CMP）工艺的方法包括将CMP浆料溶液施加到基底上的硬化流体材料的表面上，该溶液包含改变硬化流体材料表面上的结合结构的添加剂。 该方法还包括用研磨头抛光硬化的流体材料的表面。
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