公开(公告)号：US10774241B2

公开(公告)日：2020-09-15

申请号：US15431174

申请日：2017-02-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Yin Lin ,  Wen-Kuei Liu ,  Teng-Chun Tsai ,  Shen-Nan Lee ,  Kuo-Cheng Lien ,  Chang-Sheng Lin ,  Yu-Wei Chou

IPC分类号： C09G1/02 ,  C09G1/04 ,  C09G1/14 ,  C09G1/18 ,  H01L21/027 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/311

摘要： A slurry solution for a Chemical Mechanical Polishing (CMP) process includes a wetting agent, a stripper additive that comprises at least one of: N-methyl-2-pyrrolidone (NMP), dimethyl sulfoxide (DMSO), sulfolane, and dimethylformamide (DMF), and an oxidizer additive comprising at least one of: hydrogen peroxide (H2O2), ammonium persulfate ((NH4)2S2O8), peroxymonosulfuric acid (H2SO5), ozone (O3) in de-ionized water, and sulfuric acid (H2SO4).

公开(公告)号：US20170158914A1

公开(公告)日：2017-06-08

申请号：US15431174

申请日：2017-02-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Yin Lin ,  Wen-Kuei Liu ,  Teng-Chun Tsai ,  Shen-Nan Lee ,  Kuo-Cheng Lien ,  Chang-Sheng Lin ,  Yu-Wei Chou

IPC分类号： C09G1/14 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/311 ,  C09G1/04 ,  C09G1/02

摘要： A slurry solution for a Chemical Mechanical Polishing (CMP) process includes a wetting agent, a stripper additive that comprises at least one of: N-methyl-2-pyrrolidone (NMP), dimethyl sulfoxide (DMSO), sulfolane, and dimethylformamide (DMF), and an oxidizer additive comprising at least one of: hydrogen peroxide (H2O2), ammonium persulfate ((NH4)2S2O8), peroxymonosulfuric acid (H2SO5), ozone (O3) in de-ionized water, and sulfuric acid (H2SO4).

公开(公告)号：US11312882B2

公开(公告)日：2022-04-26

申请号：US17020411

申请日：2020-09-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Yin Lin ,  Wen-Kuei Liu ,  Teng-Chun Tsai ,  Shen-Nan Lee ,  Kuo-Cheng Lien ,  Chang-Sheng Lin ,  Yu-Wei Chou

IPC分类号： C09G1/14 ,  C09G1/18 ,  C09G1/02 ,  C09G1/04 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/311

摘要： A slurry solution for a Chemical Mechanical Polishing (CMP) process includes a wetting agent, a stripper additive that comprises at least one of: N-methyl-2-pyrrolidone (NMP), dimethyl sulfoxide (DMSO), sulfolane, and dimethylformamide (DMF), and an oxidizer additive comprising at least one of: hydrogen peroxide (H2O2), ammonium persulfate ((NH4)2S2O8), peroxymonosulfuric acid (H2SO5), ozone (O3) in de-ionized water, and sulfuric acid (H2SO4).

公开(公告)号：US20150307747A1

公开(公告)日：2015-10-29

申请号：US14261644

申请日：2014-04-25

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Kuo-Yin Lin ,  Wen-Kuei Liu ,  Teng-Chun Tsai ,  Shen-Nan Lee ,  Kuo-Cheng Lien ,  Chang-Sheng Lin ,  Yu-Wei Chou

IPC分类号： C09G1/18 ,  C09G1/02

CPC分类号： C09G1/14 ,  C09G1/02 ,  C09G1/04 ,  C09G1/18 ,  H01L21/0273 ,  H01L21/31055 ,  H01L21/31058 ,  H01L21/31133

摘要： A method for performing a Chemical Mechanical Polishing (CMP) process includes applying a CMP slurry solution to a surface of a hardened fluid material on a substrate, the solution comprising an additive to change a bonding structure on the surface of the hardened fluid material. The method further includes polishing the surface of the hardened fluid material with a polishing head.

摘要翻译： 执行化学机械抛光（CMP）工艺的方法包括将CMP浆料溶液施加到基底上的硬化流体材料的表面上，该溶液包含改变硬化流体材料表面上的结合结构的添加剂。 该方法还包括用研磨头抛光硬化的流体材料的表面。

公开(公告)号：US08627243B1

公开(公告)日：2014-01-07

申请号：US13650783

申请日：2012-10-12

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chi-Feng Lin ,  Yu-Wei Chou ,  Wen-Cheng Huang ,  Cheng-I Huang ,  Ching-Hua Hsieh

IPC分类号： G06F17/50 ,  G06F19/00 ,  G01R31/26 ,  G01L21/00 ,  G01N37/00 ,  G01B7/26 ,  G01B5/18 ,  G01B11/22 ,  G01B13/14 ,  G06F11/30

CPC分类号： G06F17/5081 ,  G01B5/18 ,  G01B7/26 ,  G01B11/22 ,  G01B13/14 ,  G01N37/00 ,  G06F11/30 ,  G06F19/00 ,  H01L21/7684 ,  H01L21/76877 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods for optimizing conductor patterns for conductors formed by ECP and CMP processes. A method includes receiving layout data for an IC design where electrochemical plating (ECP) processes form patterned conductors in at least one metal layer over a semiconductor wafer; determining from the received layout data a global effects factor corresponding to a global pattern density; determining layout effects factors for unit grid areas corresponding to the pattern density of the at least one metal layer within the unit grid areas, determining local effects factors for each unit grid area; using a computing device, executing an ECP simulator using at least one of the global effects factor and the local effects factors, and using the layout effects factor; outputting an predicted post-ECP hump data map from the ECP simulator; and if indicated by a threshold comparison, modifying the layout data.

摘要翻译： 用于优化由ECP和CMP工艺形成的导体的导体图案的方法。 一种方法包括接收用于IC设计的布局数据，其中电化学电镀（ECP）工艺在半导体晶片上的至少一个金属层中形成图案化导体; 从所接收的布局数据确定对应于全局图案密度的全局效应因子; 确定与单位网格区域内的至少一个金属层的图案密度相对应的单位网格区域的布局效应因子，确定每个单位网格区域的局部效应因子; 使用计算设备，使用全局效应因子和局部效应因子中的至少一个来执行ECP模拟器，并使用布局效应因子; 从ECP模拟器输出预测的后ECP驼峰数据图; 并且如果由阈值比较指示，则修改布局数据。