- 专利标题： Contact Plugs for Semiconductor Device and Method of Forming Same
-
申请号： US16112122申请日： 2018-08-24
-
公开(公告)号： US20190164817A1公开(公告)日： 2019-05-30
- 发明人: Mrunal A Khaderbad , Yasutoshi Okuno , Sung-Li Wang , Pang-Yen Tsai , Shen-Nan Lee , Teng-Chun Tsai
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L29/66 ; H01L21/285 ; H01L21/02 ; H01L21/311
摘要：
A semiconductor device and a method of forming the same are provided. A method includes forming a gate over a semiconductor structure. An epitaxial source/drain region is formed adjacent the gate. A dielectric layer is formed over the epitaxial source/drain region. An opening extending through the dielectric layer and exposing the epitaxial source/drain region is formed. A conductive material is non-conformally deposited in the opening. The conductive material fills the opening in a bottom-up manner.
信息查询
IPC分类:
