CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
Abstract:
Provided is a chemical mechanical polishing (CMP) slurry composition including an organic booster including an amino acid, a pH adjuster, and inorganic abrasive particles of less than 0.1 weight % with respect to a total weight of the CMP slurry composition, wherein a material constituting a remaining part of the CMP slurry composition is deionized water (DIW).
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