公开(公告)号：US20240318040A1

公开(公告)日：2024-09-26

申请号：US18609533

申请日：2024-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yearin Byun ,  Jeongwon Lim ,  Boyun Kim ,  Sanghyun Park ,  Seungho Park

IPC: C09G1/04 ,  H01L21/3205 ,  H01L21/321

CPC classification number: C09G1/04 ,  H01L21/3212 ,  H01L21/32051

Abstract: Provided is a chemical mechanical polishing (CMP) slurry composition including an organic booster including an amino acid, a pH adjuster, and inorganic abrasive particles of less than 0.1 weight % with respect to a total weight of the CMP slurry composition, wherein a material constituting a remaining part of the CMP slurry composition is deionized water (DIW).

公开(公告)号：US11186749B2

公开(公告)日：2021-11-30

申请号：US16879283

申请日：2020-05-20

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Boyun Kim ,  Yeryung Jeon ,  Boun Yoon ,  Taek Dong Chung ,  Jae Gyeong Lee ,  Jin-Young Lee

IPC: C09G1/02 ,  C09G1/04 ,  C09K15/02 ,  H01L21/768 ,  H01L21/321 ,  C09G1/00 ,  H01L21/306 ,  C09K3/14 ,  B24B1/00 ,  C09G1/06 ,  C09K13/06 ,  B24B37/04

Abstract: A slurry composition is disclosed which includes: a corrosion inhibitor including a material selected from carbon allotropes and derivatives thereof; and an oxidant. A method of manufacturing an integrated circuit device is disclosed which includes: forming a first metal film and a second metal film on a substrate, the first metal film and the second metal film respectively including different metals; and polishing, by using the slurry composition, a polishing target surface at which the first metal film and the second metal film are exposed.