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    Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
    1.
    发明授权
    Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom 有权

    公开(公告)号：US11581183B2

    公开(公告)日：2023-02-14

    申请号：US17192882

    申请日：2021-03-04

    Applicant: Applied Materials, Inc.

    Inventor： Bhargav S. Citla ,  Mei-Yee Shek ,  Srinivas D. Nemani

    IPC: H01L21/02 ,  C23C14/02 ,  C23C14/06 ,  H01L21/033 ,  C23C14/35

    Abstract: Embodiments described herein provide for post deposition anneal of a substrate, having an amorphous carbon layer deposited thereon, to desirably reduce variations in local stresses thereacross. In one embodiment, a method of processing a substrate includes positioning a substrate, having an amorphous carbon layer deposited thereon, in a first processing volume, flowing an anneal gas into the first processing volume, heating the substrate to an anneal temperature of not more than about 450° C., and maintaining the substrate at the anneal temperature for about 30 seconds or more. Herein, the amorphous carbon layer was deposited on the substrate using a method which included positioning the substrate on a substrate support disposed in a second processing volume, flowing a processing gas into the second processing volume, applying pulsed DC power to a carbon target disposed in the second processing volume, forming a plasma of the processing gas, and depositing the amorphous carbon layer on the substrate.

    DIRECTIONAL SELECTIVE FILL OF SILICON OXIDE MATERIALS
    2.
    发明申请
    DIRECTIONAL SELECTIVE FILL OF SILICON OXIDE MATERIALS 有权

    公开(公告)号：US20250022704A1

    公开(公告)日：2025-01-16

    申请号：US18221240

    申请日：2023-07-12

    Applicant: Applied Materials, Inc.

    Inventor： Qiang Ma ,  Biao Liu ,  Bhargav S. Citla ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Taiki Hatakeyama ,  Shreyas Shukla ,  Mei-Yee Shek

    IPC: H01L21/02 ,  H01J37/32 ,  H01L21/311

    Abstract: Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature. The methods may include forming plasma effluents of the silicon-containing precursor. The methods may include depositing a silicon-containing material on the substrate. The methods may include providing an oxygen-containing precursor to the processing region, forming plasma effluents of the oxygen-containing precursor, and contacting the silicon-containing material with the plasma effluents of the oxygen-containing precursor to form a silicon-and-oxygen-containing material. The methods may include providing a fluorine-containing precursor to the processing region, forming plasma effluents of the fluorine-containing precursor, and etching the silicon-and-oxygen-containing material from a top, a sidewall, or both of the feature with the plasma effluents of the fluorine-containing precursor.

    Methods for forming passivation protection for an interconnection structure
    6.
    发明授权
    Methods for forming passivation protection for an interconnection structure 有权
    形成互连结构钝化保护的方法

    公开(公告)号：US09299605B2

    公开(公告)日：2016-03-29

    申请号：US14201728

    申请日：2014-03-07

    Applicant: Applied Materials, Inc.

    Inventor： He Ren ,  Mehul B. Naik ,  Yong Cao ,  Sree Rangasai V. Kesapragada ,  Mei-Yee Shek ,  Yana Cheng

    IPC: H01L21/02 ,  H01L21/768

    CPC classification number: H01L21/76841 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02266 ,  H01L21/321 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849

    Abstract: Methods for forming a passivation protection structure on a metal line layer formed in an insulating material in an interconnection structure are provided. In one embodiment, a method for forming passivation protection on a metal line in an interconnection structure for semiconductor devices includes selectively forming a metal capping layer on a metal line bounded by a dielectric bulk insulating layer in an interconnection structure formed on a substrate in a processing chamber incorporated in a multi-chamber processing system, in-situ forming a barrier layer on the substrate in the processing chamber; wherein the barrier layer is a metal dielectric layer, and forming a dielectric capping layer on the barrier layer in the multi-chamber processing system.

    Abstract translation: 提供了在形成在互连结构中的绝缘材料中的金属线层上形成钝化保护结构的方法。 在一个实施例中，用于在半导体器件的互连结构中的金属线上形成钝化保护的方法包括在处理中形成在基板上的互连结构中的介电体绝缘层界定的金属线上选择性地形成金属覆盖层 结合在多腔室处理系统中，在处理室中的基底上原位形成阻挡层; 其中所述阻挡层是金属介电层，并且在所述多室处理系统中的阻挡层上形成电介质覆盖层。

    Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
    9.
    发明授权
    Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom 有权

    公开(公告)号：US10950429B2

    公开(公告)日：2021-03-16

    申请号：US16396167

    申请日：2019-04-26

    Applicant: Applied Materials, Inc.

    Inventor： Bhargav S. Citla ,  Mei-Yee Shek ,  Srinivas D. Nemani

    IPC: H01L21/02 ,  H01L21/033 ,  C23C14/06 ,  C23C14/02 ,  C23C14/35

    Abstract: Embodiments described herein provide for post deposition anneal of a substrate, having an amorphous carbon layer deposited thereon, to desirably reduce variations in local stresses thereacross. In one embodiment, a method of processing a substrate includes positioning a substrate, having an amorphous carbon layer deposited thereon, in a first processing volume, flowing an anneal gas into the first processing volume, heating the substrate to an anneal temperature of not more than about 450° C., and maintaining the substrate at the anneal temperature for about 30 seconds or more. Herein, the amorphous carbon layer was deposited on the substrate using a method which included positioning the substrate on a substrate support disposed in a second processing volume, flowing a processing gas into the second processing volume, applying pulsed DC power to a carbon target disposed in the second processing volume, forming a plasma of the processing gas, and depositing the amorphous carbon layer on the substrate.

    Method of dielectric material fill and treatment
    10.
    发明授权
    Method of dielectric material fill and treatment 有权

    公开(公告)号：US11615984B2

    公开(公告)日：2023-03-28

    申请号：US16848784

    申请日：2020-04-14

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Shi You ,  He Ren ,  Naomi Yoshida ,  Nikolaos Bekiaris ,  Mehul Naik ,  Martin Jay Seamons ,  Jingmei Liang ,  Mei-Yee Shek

    IPC: H01L21/768 ,  H01L21/02 ,  H01L21/67

    Abstract: Embodiments herein provide for oxygen based treatment of low-k dielectric layers deposited using a flowable chemical vapor deposition (FCVD) process. Oxygen based treatment of the FCVD deposited low-k dielectric layers desirably increases the Ebd to capacitance and reliability of the devices while removing voids. Embodiments include methods and apparatus for making a semiconductor device including: etching a metal layer disposed atop a substrate to form one or more metal lines having a top surface, a first side, and a second side; depositing a passivation layer atop the top surface, the first side, and the second side under conditions sufficient to reduce or eliminate oxygen contact with the one or more metal lines; depositing a flowable layer of low-k dielectric material atop the passivation layer in a thickness sufficient to cover the one or more metal lines; and contacting the flowable layer of low-k dielectric material with oxygen under conditions sufficient to anneal and increase a density of the low-k dielectric material.

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