公开(公告)号：US11976363B2

公开(公告)日：2024-05-07

申请号：US17407086

申请日：2021-08-19

申请人： Applied Materials, Inc.

发明人： Muhannad Mustafa ,  Mario D. Silvetti ,  Kevin Griffin

IPC分类号： C23C16/458 ,  H01L21/687 ,  H01L21/02

CPC分类号： C23C16/4585 ,  H01L21/68735 ,  H01L21/02337 ,  H01L21/02656

摘要： Pedestal assemblies, purge rings for pedestal assemblies, and processing methods for increasing residence time of an edge purge gas in heated pedestal assemblies are described. Purge rings have an inner diameter face and an outer diameter face defining a thickness of the purge ring, a top surface and a bottom surface defining a height of the purge ring, and a thermal expansion feature. Purge rings comprise a plurality of apertures extending through the thickness and aligned circumferentially with a plurality of circumferentially spaced purge outlets in a substrate support.

公开(公告)号：US20220327262A1

公开(公告)日：2022-10-13

申请号：US17224545

申请日：2021-04-07

申请人： Applied Materials, Inc.

发明人： Dhritiman Subha Kashyap ,  Chaowei Wang ,  Kartik Shah ,  Kevin Griffin ,  Karthik Ramanathan ,  Hanhong Chen ,  Joseph AuBuchon ,  Sanjeev Baluja

IPC分类号： G06F30/27 ,  G06F30/10

摘要： Methods, software systems and processes to develop surrogate model-based optimizers for controlling and optimizing flow and pressure of purges between a showerhead and a heater having a substrate support to control non-uniformity inherent in a processing chamber due to geometric configuration and process regimes. The flow optimizer process utilizes experimental data from optimal process space coverage models, generated simulation data and statistical machine learning tools (i.e. regression models and global optimizers) to predict optimal flow rates for any user-specified process regime.

公开(公告)号：US20220316061A1

公开(公告)日：2022-10-06

申请号：US17845191

申请日：2022-06-21

申请人： Applied Materials, Inc.

发明人： Kevin Griffin ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Mario D. Silvetti ,  Hari Ponnekanti

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/52

摘要： Processing chambers and methods to disrupt the boundary layer are described. The processing chamber includes a showerhead and a substrate support therein. The showerhead and the substrate support are spaced to have a process gap between them. In use, a boundary layer is formed adjacent to the substrate support or wafer surface. As the reaction occurs at the wafer surface, reaction products and byproduct are produced, resulting in reduced chemical utilization rate. The processing chamber and methods described disrupt the boundary layer by changing one or more process parameters (e.g., pressure, flow rate, time, process gap or temperature of fluid passing through the showerhead).

公开(公告)号：US11430680B2

公开(公告)日：2022-08-30

申请号：US16388132

申请日：2019-04-18

申请人： Applied Materials, Inc.

发明人： Abraham Ravid ,  Kevin Griffin ,  Joseph Yudovsky ,  Kaushal Gangakhedkar ,  Dmitry A. Dzilno ,  Alex Minkovich

IPC分类号： H01L21/67 ,  C23C16/52 ,  H01L21/687 ,  C23C16/455 ,  C23C16/458

摘要： Apparatus and methods of measuring and controlling the gap between a susceptor assembly and a gas distribution assembly are described. Apparatus and methods for positional control and temperature control for wafer transfer purposes are also described.

公开(公告)号：US11261525B2

公开(公告)日：2022-03-01

申请号：US15184617

申请日：2016-06-16

申请人： Applied Materials, Inc.

发明人： Joseph Yudovsky ,  Kevin Griffin ,  Mandyam Sriram

IPC分类号： C23C16/455

摘要： Apparatus and methods for processing a substrate including an injector unit, comprising a leading reactive gas port extending along a length of the injector unit, a trailing reactive gas port extending along the length of the injector unit, and a merge vacuum port forming a boundary around and enclosing the leading reactive gas port and the trailing reactive gas port.

公开(公告)号：US20200149161A1

公开(公告)日：2020-05-14

申请号：US16744560

申请日：2020-01-16

申请人： Applied Materials, Inc.

发明人： Ning Li ,  Steven D. Marcus ,  Tai T. Ngo ,  Kevin Griffin

IPC分类号： C23C16/44 ,  C23C16/455

摘要： Apparatus and methods for spatial atomic layer deposition including at least one first exhaust system and at least one second exhaust system. Each exhaust system including a throttle valve and a pressure gauge to control the pressure in the processing region associated with the individual exhaust system.

公开(公告)号：US10312120B2

公开(公告)日：2019-06-04

申请号：US14774377

申请日：2014-03-14

申请人： Applied Materials, Inc.

发明人： Abraham Ravid ,  Kevin Griffin ,  Joseph Yudovsky ,  Kaushal Gangakhedkar ,  Dmitry A. Dzilno ,  Alex Minkovich

IPC分类号： H01L21/67 ,  C23C16/44 ,  H01L21/687 ,  C23C16/52 ,  C23C16/455 ,  C23C16/458

摘要： Apparatus and methods of measuring and controlling the gap between a susceptor assembly and a gas distribution assembly are described. Apparatus and methods for positional control and temperature control for wafer transfer purposes are also described.

公开(公告)号：US20160215392A1

公开(公告)日：2016-07-28

申请号：US15001710

申请日：2016-01-20

申请人： Applied Materials, Inc.

发明人： Joseph Yudovsky ,  Kevin Griffin ,  Aaron Miller ,  Jeff Tobin ,  Eran Newman ,  Tatsuya E. Sato ,  Patricia M. Liu

IPC分类号： C23C16/455

摘要： Apparatus and methods for spatial atomic layer deposition are disclosed. The apparatus include a gas delivery system comprising a first gas flowing through a plurality of legs in fluid communication with a valve and a second gas flowing through a plurality of legs into the valves.

摘要翻译： 公开了用于空间原子层沉积的装置和方法。 该装置包括气体输送系统，其包括流过与阀流体连通的多个支腿的第一气体和流过多个支柱的阀的第二气体。

公开(公告)号：US12084771B2

公开(公告)日：2024-09-10

申请号：US17189963

申请日：2021-03-02

申请人： Applied Materials, Inc.

发明人： Zohreh Razavi Hesabi ,  Cong Trinh ,  Kevin Griffin ,  Alexander V. Garachtchenko ,  Kenric Choi ,  Vipin Jose ,  Saloni Sawalkar ,  Maribel Maldonado-Garcia ,  Kendrick H. Chaney

IPC分类号： G05D9/12 ,  C23C16/455 ,  C23C16/52 ,  G01F23/00 ,  H01L21/66 ,  H01L21/67

CPC分类号： C23C16/52 ,  C23C16/45544 ,  G01F23/0007 ,  G05D9/12 ,  H01L21/67253 ,  H01L22/10

摘要： An system, method and software for controlling processes of an auto-refill system of an ampoule including one or more sensors configured to determine one or more liquid level heights within the ampoule. The auto-refill system having a state machine configured to control the auto-refill system, the state machine having one or more states for refilling the ampoule.

公开(公告)号：US11821083B2

公开(公告)日：2023-11-21

申请号：US17563773

申请日：2021-12-28

申请人： Applied Materials, Inc.

发明人： Ning Li ,  Steven D. Marcus ,  Tai T. Ngo ,  Kevin Griffin

IPC分类号： C23C16/44 ,  C23C16/455

CPC分类号： C23C16/4412 ,  C23C16/4417 ,  C23C16/45519 ,  C23C16/45544 ,  C23C16/45557

摘要： Apparatus and methods for spatial atomic layer deposition including at least one first exhaust system and at least one second exhaust system. Each exhaust system including a throttle valve and a pressure gauge to control the pressure in the processing region associated with the individual exhaust system.