公开(公告)号：US11015246B2

公开(公告)日：2021-05-25

申请号：US15494835

申请日：2017-04-24

Applicant: Applied Materials, Inc.

Inventor： Tatsuya E. Sato

IPC: C23C16/24 ,  C23C16/455 ,  C23C16/458 ,  C23C16/04

Abstract: Gas injector units for processing chambers having one or more of scavenging ports, differential pressure ports and variable surfaces for variable injector to substrate gap distances are described. Gas distribution assemblies and processing chambers incorporating the gas injector units are also described.

公开(公告)号：US12018363B2

公开(公告)日：2024-06-25

申请号：US16577220

申请日：2019-09-20

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Lakmal C. Kalutarage ,  Jeffrey W. Anthis ,  Tatsuya E. Sato

IPC: C23C16/30 ,  C23C16/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/56 ,  C23F1/44 ,  H01L21/02 ,  H01L21/762 ,  H01L21/768

CPC classification number: C23C16/303 ,  C23C16/32 ,  C23C16/56 ,  C23F1/44 ,  H01L21/02274 ,  H01L21/76224 ,  H01L21/76837 ,  C23C16/45536 ,  C23C16/50

Abstract: Methods for depositing film comprise depositing an aluminum-containing gap-fill film in a bottom-up manner in a feature of a substrate surface. The substrate can be sequentially exposed to an aluminum-containing precursor, a reactant, a fluorinating agent, and an etchant any number of times to promote bottom-up growth of the film in the feature.

公开(公告)号：US20200095674A1

公开(公告)日：2020-03-26

申请号：US16577220

申请日：2019-09-20

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Lakmal C. Kalutarage ,  Jeffrey W. Anthis ,  Tatsuya E. Sato

IPC: C23C16/30 ,  H01L21/762 ,  H01L21/768 ,  H01L21/02 ,  C23C16/32 ,  C23C16/56 ,  C23F1/44

Abstract: Methods for depositing film comprise depositing an aluminum-containing gap-fill film in a bottom-up manner in a feature of a substrate surface. The substrate can be sequentially exposed to an aluminum-containing precursor, a reactant, a fluorinating agent, and an etchant any number of times to promote bottom-up growth of the film in the feature.

公开(公告)号：US20240404830A1

公开(公告)日：2024-12-05

申请号：US18203417

申请日：2023-05-30

Applicant: Applied Materials, Inc.

Inventor： Radhika P. Patil ,  Tatsuya E. Sato ,  Haoyan Sha ,  Abinash Tripathy ,  Michael S. Jackson ,  Janardhan Devrajan

IPC: H01L21/28

Abstract: Embodiments of the disclosure relate to methods of depositing seam-free gapfill. In some embodiments, the gapfill consists of titanium nitride. The gapfill methods comprise forming a first layer and a second layer. The firs layer is formed without treatment or densification, while the second layer is formed with periodic treatment. The resulting gapfill in advantageously seam-free.

公开(公告)号：US12110589B2

公开(公告)日：2024-10-08

申请号：US16631979

申请日：2018-08-01

Applicant: Applied Materials, Inc.

Inventor： Tatsuya E. Sato ,  Wei Liu ,  Li-Qun Xia

IPC: C23C16/455 ,  C23C16/40 ,  H01L21/02

CPC classification number: C23C16/45553 ,  C23C16/403 ,  C23C16/4554 ,  C23C16/45548 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/0234

Abstract: Methods comprising forming a metal oxide film by atomic layer deposition using water as an oxidant are described. The metal oxide film is exposed to a decoupled plasma comprising one or more of He, H2 or O2 to lower the wetch etch rate of the metal oxide film.

公开(公告)号：US20200350157A1

公开(公告)日：2020-11-05

申请号：US16403312

申请日：2019-05-03

Applicant: Applied Materials, Inc.

Inventor： David Chu ,  Steven C. Hung ,  Malcolm J. Bevan ,  Charles Chu ,  Tatsuya E. Sato ,  Shih-Chung Chen ,  Patricia M. Liu ,  Johanes Swenberg

IPC: H01L21/02 ,  H01L21/28

Abstract: Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include delivering a nitrogen-containing precursor or an oxygen-containing precursor to a substrate contained in a semiconductor processing chamber. The methods may include forming reactive ligands on an exposed surface of the substrate with the nitrogen-containing precursor or the oxygen-containing precursor. The methods may also include forming a high-k dielectric material overlying the substrate.

公开(公告)号：US09698009B2

公开(公告)日：2017-07-04

申请号：US15001681

申请日：2016-01-20

Applicant: Applied Materials, Inc.

Inventor： Tatsuya E. Sato ,  Eran Newman

IPC: H01L21/22 ,  H01L21/02 ,  H01L21/311 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/403 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/45563 ,  H01L21/02178

Abstract: Methods of depositing a film comprising positioning a plurality of substrates on a substrate support in a processing chamber having a plurality of processing regions, each processing region separated from an adjacent region by a gas curtain. Alternating exposure to first reactive gases, purge gases, second reactive gases, and purge gas in at least one of the processing regions to deposit a film.

公开(公告)号：US11370669B2

公开(公告)日：2022-06-28

申请号：US16247123

申请日：2019-01-14

Applicant: Applied Materials, Inc.

Inventor： Tatsuya E. Sato ,  Li-Qun Xia ,  Sean M. Seutter

IPC: C23C16/455 ,  C01F17/218 ,  H01L21/02 ,  C23C16/40 ,  C09D1/00

Abstract: Amorphous silicon doped yttrium oxide films and methods of making same are described. Deposition of the amorphous silicon doped yttrium oxide film by thermal chemical vapor deposition or atomic layer deposition process are described.

公开(公告)号：US20220081769A1

公开(公告)日：2022-03-17

申请号：US17019599

申请日：2020-09-14

Applicant: Applied Materials, Inc.

Inventor： Kendrick H. Chaney ,  Tatsuya E. Sato

IPC: C23C16/455 ,  C23C16/40 ,  H01L21/02

Abstract: Methods for depositing metal-containing films on a substrate are described. The substrate is exposed to a metal precursor and an in situ steam generated oxidant to form the metal-containing film (e.g., metal oxide). The exposures can be sequential or simultaneous. An atomic layer deposition method is described that includes a forming gas anneal operation as part of the deposition method.

公开(公告)号：US20200165725A1

公开(公告)日：2020-05-28

申请号：US16631979

申请日：2018-08-01

Applicant: Applied Materials, Inc.

Inventor： Tatsuya E. Sato ,  Wei Liu ,  Li-Qun Xia

IPC: C23C16/455 ,  C23C16/40 ,  H01L21/02

Abstract: Methods comprising forming a metal oxide film by atomic layer deposition using water as an oxidant are described. The metal oxide film is exposed to a decoupled plasma comprising one or more of He, H2 or O2 to lower the wetch etch rate of the metal oxide film.