公开(公告)号：US20240047215A1

公开(公告)日：2024-02-08

申请号：US18379515

申请日：2023-10-12

Applicant: Applied Materials, Inc.

Inventor： Kunal Bhatnagar ,  Dmitrii Leshchev ,  Mohith Verghese ,  Jose Alexandro Romero

IPC: H01L21/285 ,  C23C16/44 ,  C23C16/455 ,  C23C16/14

CPC classification number: H01L21/28556 ,  C23C16/4408 ,  C23C16/45553 ,  C23C16/14

Abstract: Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.

公开(公告)号：US20240237337A9

公开(公告)日：2024-07-11

申请号：US18486576

申请日：2023-10-13

Applicant: Applied Materials, Inc.

Inventor： Jaesoo Ahn ,  Jose Alexandro Romero ,  Kunal Bhatnagar ,  Mahendra Pakala

IPC: H10B43/20 ,  H01L21/02

CPC classification number: H10B43/20 ,  H01L21/0228 ,  H10B43/35

Abstract: A method includes obtaining a base structure of a three-dimensional (3D) memory device, forming, on the base structure, a blocking layer including a high-k dielectric material, and forming, on the blocking layer, a wordline for the 3D memory device including molybdenum using an atomic layer deposition (ALD) process.

公开(公告)号：US20220270883A1

公开(公告)日：2022-08-25

申请号：US17183474

申请日：2021-02-24

Applicant: Applied Materials, Inc.

Inventor： Kunal Bhatnagar ,  Dmitrii Leshchev ,  Mohith Verghese ,  Alex Romero

IPC: H01L21/285 ,  C23C16/14 ,  C23C16/455 ,  C23C16/44

Abstract: Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.

公开(公告)号：US12114488B2

公开(公告)日：2024-10-08

申请号：US17308577

申请日：2021-05-05

Applicant: Applied Materials, Inc.

Inventor： Yong Yang ,  Kunal Bhatnagar ,  Srinivas Gandikota ,  Seshadri Ganguli ,  Jose Alexandro Romero ,  Mandyam Sriram ,  Mohith Verghese ,  Jacqueline S. Wrench ,  Yixiong Yang

IPC: H10B12/00 ,  C23C16/42 ,  C23C16/455

CPC classification number: H10B12/488 ,  C23C16/42 ,  C23C16/45527 ,  C23C16/45553

Abstract: Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.

公开(公告)号：US20240138147A1

公开(公告)日：2024-04-25

申请号：US18486576

申请日：2023-10-12

Applicant: Applied Materials, Inc.

Inventor： Jaesoo Ahn ,  Jose Alexandro Romero ,  Kunal Bhatnagar ,  Mahendra Pakala

IPC: H10B43/20 ,  H01L21/02

CPC classification number: H10B43/20 ,  H01L21/0228 ,  H10B43/35

Abstract: A method includes obtaining a base structure of a three-dimensional (3D) memory device, forming, on the base structure, a blocking layer including a high-k dielectric material, and forming, on the blocking layer, a wordline for the 3D memory device including molybdenum using an atomic layer deposition (ALD) process.

公开(公告)号：US20240035151A1

公开(公告)日：2024-02-01

申请号：US18222587

申请日：2023-07-17

Applicant: Applied Materials, Inc.

Inventor： Rand Haddadin ,  Kunal Bhatnagar ,  Mohith Verghese ,  Jose Alexandro Romero ,  Aniruddh Shekhawat

IPC: C23C16/06 ,  C23C16/04 ,  C23C16/40

CPC classification number: C23C16/06 ,  C23C16/045 ,  C23C16/40

Abstract: Methods for selective deposition are described herein. The methods include depositing an oxide on a first portion of a substrate surface selected from the group consisting of a metal surface, a metal nitride surface and a metal silicide surface. The methods further comprise selectively depositing a molybdenum film on a second portion of the substrate surface that does not have the oxide deposited thereon.

公开(公告)号：US20220380897A1

公开(公告)日：2022-12-01

申请号：US17829806

申请日：2022-06-01

Applicant: Applied Materials, Inc.

Inventor： Kunal Bhatnagar ,  Mohith Verghese

IPC: C23C16/455 ,  C23C16/56 ,  C23C16/04 ,  C23C16/40

Abstract: A deposition method demonstrating a slower growth rate is disclosed. Some embodiments of the disclosure provide CVD methods which utilize a halide-containing growth inhibitor as a co-reactant with a metal halide precursor and a reactant. Some embodiments of the disclosure relate to CVD and ALD methods comprising exposure of the substrate surface to a pretreatment comprising a halide-containing growth inhibitor.

公开(公告)号：US12080558B2

公开(公告)日：2024-09-03

申请号：US18379515

申请日：2023-10-12

Applicant: Applied Materials, Inc.

Inventor： Kunal Bhatnagar ,  Dmitrii Leshchev ,  Mohith Verghese ,  Jose Alexandro Romero

IPC: H01L21/285 ,  C23C16/14 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/28556 ,  C23C16/14 ,  C23C16/4408 ,  C23C16/45553

Abstract: Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.

公开(公告)号：US11854813B2

公开(公告)日：2023-12-26

申请号：US17183474

申请日：2021-02-24

Applicant: Applied Materials, Inc.

Inventor： Kunal Bhatnagar ,  Dmitrii Leshchev ,  Mohith Verghese ,  Jose Alexandro Romero

IPC: H01L21/285 ,  C23C16/44 ,  C23C16/455 ,  C23C16/14

CPC classification number: H01L21/28556 ,  C23C16/14 ,  C23C16/4408 ,  C23C16/45553

Abstract: Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.

公开(公告)号：US20230178375A1

公开(公告)日：2023-06-08

申请号：US17541582

申请日：2021-12-03

Applicant: Applied Materials, Inc.

Inventor： Kunal Bhatnagar ,  Wei Liu ,  Shashank Sharma ,  Archana Kumar ,  Mohith Verghese ,  Jose Alexandro Romero

IPC: H01L21/28 ,  H01L29/49 ,  H01L29/40 ,  H01L21/285 ,  H01L21/3215

CPC classification number: H01L21/28088 ,  H01L21/3215 ,  H01L21/28556 ,  H01L29/401 ,  H01L29/4966

Abstract: Method of forming film stacks and film stacks for electronic devices are described herein. The methods comprise depositing a molybdenum nucleation layer on a gate oxide layer; depositing a molybdenum layer on the molybdenum nucleation layer; and performing a plasma nitridation process to insert nitrogen atoms into the molybdenum layer to form a work function modulating layer having an effective work function ≤ 4.5 eV. The plasma nitridation process comprises exposing the molybdenum layer to a radical-rich plasma comprising one or more of N2 or NH3. Some methods further comprise one or more of annealing the work function modulating layer, depositing a conductive layer on the work function modulating layer, or performing an etch process.