Invention Publication
- Patent Title: THREE-DIMENSIONAL MEMORY DEVICE WORDLINES WITH REDUCED BLOCKING LAYER DAMAGE
-
Application No.: US18486576Application Date: 2023-10-12
-
Publication No.: US20240138147A1Publication Date: 2024-04-25
- Inventor: Jaesoo Ahn , Jose Alexandro Romero , Kunal Bhatnagar , Mahendra Pakala
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H10B43/20
- IPC: H10B43/20 ; H01L21/02
Abstract:
A method includes obtaining a base structure of a three-dimensional (3D) memory device, forming, on the base structure, a blocking layer including a high-k dielectric material, and forming, on the blocking layer, a wordline for the 3D memory device including molybdenum using an atomic layer deposition (ALD) process.
Public/Granted literature
- US20240237337A9 THREE-DIMENSIONAL MEMORY DEVICE WORDLINES WITH REDUCED BLOCKING LAYER DAMAGE Public/Granted day:2024-07-11
Information query
