公开(公告)号：US20240047215A1

公开(公告)日：2024-02-08

申请号：US18379515

申请日：2023-10-12

Applicant: Applied Materials, Inc.

Inventor： Kunal Bhatnagar ,  Dmitrii Leshchev ,  Mohith Verghese ,  Jose Alexandro Romero

IPC: H01L21/285 ,  C23C16/44 ,  C23C16/455 ,  C23C16/14

CPC classification number: H01L21/28556 ,  C23C16/4408 ,  C23C16/45553 ,  C23C16/14

Abstract: Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.

公开(公告)号：US20220270883A1

公开(公告)日：2022-08-25

申请号：US17183474

申请日：2021-02-24

Applicant: Applied Materials, Inc.

Inventor： Kunal Bhatnagar ,  Dmitrii Leshchev ,  Mohith Verghese ,  Alex Romero

IPC: H01L21/285 ,  C23C16/14 ,  C23C16/455 ,  C23C16/44

Abstract: Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.

公开(公告)号：US12080558B2

公开(公告)日：2024-09-03

申请号：US18379515

申请日：2023-10-12

Applicant: Applied Materials, Inc.

Inventor： Kunal Bhatnagar ,  Dmitrii Leshchev ,  Mohith Verghese ,  Jose Alexandro Romero

IPC: H01L21/285 ,  C23C16/14 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/28556 ,  C23C16/14 ,  C23C16/4408 ,  C23C16/45553

Abstract: Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.

公开(公告)号：US11854813B2

公开(公告)日：2023-12-26

申请号：US17183474

申请日：2021-02-24

Applicant: Applied Materials, Inc.

Inventor： Kunal Bhatnagar ,  Dmitrii Leshchev ,  Mohith Verghese ,  Jose Alexandro Romero

IPC: H01L21/285 ,  C23C16/44 ,  C23C16/455 ,  C23C16/14

CPC classification number: H01L21/28556 ,  C23C16/14 ,  C23C16/4408 ,  C23C16/45553

Abstract: Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.