公开(公告)号：US11495461B2

公开(公告)日：2022-11-08

申请号：US16800351

申请日：2020-02-25

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Suketu Arun Parikh ,  Daniel Lee Diehl ,  Michael Anthony Stolfi ,  Jothilingam Ramalingam ,  Yong Cao ,  Lifan Yan ,  Chi-I Lang ,  Hoyung David Hwang

IPC: H01L21/033 ,  H01L21/311

Abstract: Methods for forming a film stack comprising a hardmask layer and etching such hardmask layer to form features in the film stack are provided. The methods described herein facilitate profile and dimension control of features through a proper profile management scheme formed in the film stack. In one or more embodiments, a method for etching a hardmask layer includes forming a hardmask layer on a substrate, where the hardmask layer contains a metal-containing material containing a metal element having an atomic number greater than 28, supplying an etching gas mixture to the substrate, and etching the hardmask layer exposed by a photoresist layer.

公开(公告)号：US20240379376A1

公开(公告)日：2024-11-14

申请号：US18314481

申请日：2023-05-09

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Yung-Chen Lin ,  Zhiyu Huang ,  Fenglin Wang ,  Chi-I Lang ,  Hoyung David Hwang ,  Edwin A. Arevalo ,  KyuHa Shim

IPC: H01L21/3115 ,  C23C14/48 ,  G03F7/004 ,  G03F7/09 ,  G03F7/11

Abstract: Disclosed herein are approaches for reducing EUV dose during formation of a patterned metal oxide photoresist. In one approach, a method may include providing a stack of layers atop a substrate, the stack of layers comprising a film layer, and implanting the film layer with ions. The method may further include depositing a metal oxide photoresist atop the film layer, and patterning the metal oxide photoresist.

公开(公告)号：US20220004105A1

公开(公告)日：2022-01-06

申请号：US17349534

申请日：2021-06-16

Applicant: Applied Materials, Inc.

Inventor： Yuqiong Dai ,  Madhur Sachan ,  Regina Freed ,  Hoyung David Hwang

IPC: G03F7/40 ,  G03F7/16 ,  C23C16/06 ,  G03F7/20 ,  G03F7/004

Abstract: Embodiments disclosed herein include a method of developing a metal oxo photoresist with a non-wet process. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a chamber. In an embodiment, the metal oxo photoresist comprises exposed regions and unexposed regions, and the unexposed regions comprise a higher carbon concentration than the exposed regions. In an embodiment, the method further comprises flowing a gas into the chamber, wherein the gas reacts with the unexposed regions to produce a volatile byproduct.