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公开(公告)号：US10096725B2
公开(公告)日：2018-10-09
申请号：US14531549
申请日：2014-11-03
Applicant: Applied Materials, Inc.
Inventor： Yong Cao , Daniel Lee Diehl , Rongjun Wang , Xianmin Tang , Tai-chou Papo Chen , Tingjun Xu
Abstract: A method for forming an anti-reflective coating (ARC) includes positioning a substrate below a target and flowing a first gas to deposit a first portion of the graded ARC onto the substrate. The method includes gradually flowing a second gas to deposit a second portion of the graded ARC, and gradually flowing a third gas while simultaneously gradually decreasing the flow of the second gas to deposit a third portion of the graded ARC. The method also includes flowing the third gas after stopping the flow of the second gas to form a fourth portion of the graded ARC. In another embodiment a film stack having a substrate having a graded ARC disposed thereon is provided. The graded ARC includes a first portion, a second portion disposed on the first portion, a third portion disposed on the second portion, and a fourth portion disposed on the third portion.
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公开(公告)号：US09177796B2
公开(公告)日：2015-11-03
申请号：US14269010
申请日：2014-05-02
Applicant: Applied Materials, Inc.
Inventor： Christopher Dennis Bencher , Daniel Lee Diehl , Huixiong Dai , Yong Cao , Tingjun Xu , Weimin Zeng , Peng Xie
IPC: H01L21/311 , H01L21/033 , H01L21/02 , H01L21/027 , H01L21/3105 , C23C14/00 , C23C14/06
CPC classification number: H01L21/0337 , C23C14/0042 , C23C14/06 , C23C14/14 , C23C14/351 , H01L21/02126 , H01L21/0214 , H01L21/02266 , H01L21/0276 , H01L21/0332 , H01L21/3081 , H01L21/3086 , H01L21/3105 , H01L21/31138 , H01L21/31144
Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.
Abstract translation: 本文的实施方案提供了用于形成PVD氧化硅或富硅氧化物或PVD SiN或富硅SiN或富SiC或富硅SiC的方法或前述组合，包括将氢控制掺入到迄今为止参考的化合物 作为SiO x N y C z：H w，其中w，x，y和z可以在0％至100％的浓度范围内变化，作为具有与曝光波长下的光致抗蚀剂基本匹配的光学性质的硬掩模。 因此使相对于光致抗蚀剂光学平坦化的硬掩模。 这允许在硬掩模中的多个序列的光刻和蚀刻，而光致抗蚀剂基本上保持没有光学形貌或反射率变化。
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公开(公告)号：US09478421B2
公开(公告)日：2016-10-25
申请号：US14878514
申请日：2015-10-08
Applicant: Applied Materials, Inc.
Inventor： Christopher Dennis Bencher , Daniel Lee Diehl , Huixiong Dai , Yong Cao , Tingjun Xu , Weimin Zeng , Peng Xie
IPC: H01L21/033 , H01L21/02 , H01L21/027 , H01L21/3105 , H01L21/311 , C23C14/00 , C23C14/06 , C23C14/14 , C23C14/35 , H01L21/308
CPC classification number: H01L21/0337 , C23C14/0042 , C23C14/06 , C23C14/14 , C23C14/351 , H01L21/02126 , H01L21/0214 , H01L21/02266 , H01L21/0276 , H01L21/0332 , H01L21/3081 , H01L21/3086 , H01L21/3105 , H01L21/31138 , H01L21/31144
Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.
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