公开(公告)号：US09733579B2

公开(公告)日：2017-08-15

申请号：US14581632

申请日：2014-12-23

Applicant: Applied Materials, Inc.

Inventor： Sang Ki Nam ,  Peng Xie ,  Qiwei Liang ,  Ludovic Godet

IPC: G03F7/38 ,  G03F7/20 ,  G03F7/40

CPC classification number: G03F7/70733 ,  G03F7/38 ,  G03F7/40 ,  G03F7/70325

Abstract: A method of processing a substrate is disclosed herein. The method includes applying a photoresist layer comprising a photoacid generator to a substrate, wherein a first portion of the photoresist layer has been exposed unprotected by a photomask to a radiation light in a lithographic exposure process. The method also includes applying an electric field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction, wherein the electric field is applied by a first alternating pair of a positive voltage electrode and a negative voltage electrode and a second alternating pair of a positive voltage electrode and a negative voltage electrode.

公开(公告)号：US09411237B2

公开(公告)日：2016-08-09

申请号：US14205324

申请日：2014-03-11

Applicant: Applied Materials, Inc.

Inventor： Peng Xie ,  Christopher Dennis Bencher ,  Huixiong Dai ,  Timothy Michaelson ,  Subhash Deshmukh

IPC: G03F7/40 ,  G03F7/36

CPC classification number: H01L21/67069 ,  C23C16/45544 ,  G03F7/36 ,  G03F7/405 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/68707

Abstract: In some embodiments, a method of forming an etch mask on a substrate is provided that includes (1) forming a resist layer on a substrate; (2) exposing one or more regions of the resist layer to an energy source so as to alter at least one of a physical property and a chemical property of the exposed regions; (3) performing a hardening process on the resist layer to increase the etch resistance of first regions of the resist layer relative to second regions of the resist layer, the hardening process including exposing the resist layer to one or more reactive species within an atomic layer deposition (ALD) chamber; and (4) dry etching the resist layer to remove the one or more second regions and to form a pattern in the resist layer. Other embodiments are provided.

Abstract translation: 在一些实施例中，提供了在衬底上形成蚀刻掩模的方法，其包括（1）在衬底上形成抗蚀剂层; （2）将抗蚀剂层的一个或多个区域暴露于能量源，以便改变暴露区域的物理性质和化学性质中的至少一个; （3）对抗蚀剂层进行硬化处理以提高抗蚀剂层相对于抗蚀剂层的第二区域的第一区域的耐蚀刻性，硬化过程包括将抗蚀剂层暴露于原子层内的一个或多个反应性物质 沉积（ALD）室; 和（4）干蚀刻抗蚀剂层以除去一个或多个第二区域并在抗蚀剂层中形成图案。 提供其他实施例。

公开(公告)号：US20160208415A1

公开(公告)日：2016-07-21

申请号：US14908505

申请日：2014-08-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Christopher Dennis Bencher ,  Peng Xie ,  Stephen Moffatt ,  Bruce E. Adams ,  Majeed A. Foad

IPC: C30B30/04 ,  C30B19/08 ,  C30B29/02

CPC classification number: C30B30/04 ,  C23C14/04 ,  C23C14/16 ,  C23C14/5806 ,  C30B19/08 ,  C30B29/02

Abstract: A magnetic field guided crystal orientation system, and a method of operation of a magnetic field guided crystal orientation system thereof, including: a work platform; a heating element above the work platform for selectively heating a base layer having grains on a wafer substrate where the wafer substrate is a part of a wafer on the work platform; and a magnetic assembly fixed relative to the heating element for aligning the grains of the base layer using a magnetic field of 10 Tesla or greater for formation of an interconnect having a crystal orientation of grains in the interconnect matching the crystal orientation of the grains of the base layer.

Abstract translation: 磁场引导晶体取向系统及其磁场引导晶体取向系统的操作方法，包括：工作平台; 工作平台上方的加热元件，用于选择性地加热晶片衬底上具有晶粒的基底层，其中晶片衬底是工作平台上的晶片的一部分; 以及相对于所述加热元件固定的磁性组件，用于使用10特斯拉或更大的磁场对准所述基底层的晶粒，以形成所述互连中的晶粒取向与所述晶体的晶体取向相匹配 基层。

公开(公告)号：US09798240B2

公开(公告)日：2017-10-24

申请号：US14472306

申请日：2014-08-28

Applicant: Applied Materials, Inc.

Inventor： Peng Xie ,  Ludovic Godet ,  Christopher Bencher

IPC: G03F7/20 ,  G03F7/38 ,  G03F7/004 ,  G03F7/26

CPC classification number: G03F7/38 ,  G03F7/0045 ,  G03F7/26

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field, a magnetic field, and/or a standing wave during photolithography processes. The field and/or standing wave application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

公开(公告)号：US09280070B2

公开(公告)日：2016-03-08

申请号：US14476944

申请日：2014-09-04

Applicant: Applied Materials, Inc.

Inventor： Peng Xie ,  Ludovic Godet

IPC: G03F7/38 ,  G03F7/20

CPC classification number: G03F7/38 ,  G03F7/2022 ,  G03F7/70325

Abstract: Methods disclosed herein apply an electric field and/or a magnetic field during photolithography processes. The field application may control the diffusion of the charged species generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. The field application may additionally or alternatively control the diffusion of the charged species in a direction perpendicular to a plane formed by the photoresist layer. Such controlled perpendicular diffusion may increase the photoresist sensitivity. In other embodiments, the field may control the diffusion of the charged species within the plane of the photoresist layer but in a direction perpendicular or non-parallel to the line and spacing direction. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

Abstract translation: 本文公开的方法在光刻工艺期间施加电场和/或磁场。 场应用可以控制由光致酸发生器沿着线和间隔方向产生的带电物质的扩散，从而防止由随机扩散引起的线边缘/宽度粗糙度。 场应用可以附加地或替代地控制带电物质在垂直于由光致抗蚀剂层形成的平面的方向上的扩散。 这种受控的垂直扩散可以增加光致抗蚀剂的灵敏度。 在其他实施例中，场可以控制带电物质在光致抗蚀剂层的平面内但在垂直于或不平行于线和间隔方向的方向上的扩散。 用于实施上述方法的装置也在此公开。

公开(公告)号：US10108093B2

公开(公告)日：2018-10-23

申请号：US15782425

申请日：2017-10-12

Applicant: Applied Materials, Inc.

Inventor： Peng Xie ,  Ludovic Godet ,  Christopher Bencher

IPC: G03F7/40 ,  G03F7/38 ,  G03F7/004 ,  G03F7/26

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field, a magnetic field, and/or a standing wave during photolithography processes. The field and/or standing wave application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

公开(公告)号：US09478421B2

公开(公告)日：2016-10-25

申请号：US14878514

申请日：2015-10-08

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis Bencher ,  Daniel Lee Diehl ,  Huixiong Dai ,  Yong Cao ,  Tingjun Xu ,  Weimin Zeng ,  Peng Xie

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/311 ,  C23C14/00 ,  C23C14/06 ,  C23C14/14 ,  C23C14/35 ,  H01L21/308

CPC classification number: H01L21/0337 ,  C23C14/0042 ,  C23C14/06 ,  C23C14/14 ,  C23C14/351 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02266 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/31144

Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.

公开(公告)号：US09366966B2

公开(公告)日：2016-06-14

申请号：US14478403

申请日：2014-09-05

Applicant: Applied Materials, Inc.

Inventor： Peng Xie ,  Ludovic Godet

IPC: G03F7/26 ,  G03F7/20

CPC classification number: G03F7/26 ,  G03F7/0045 ,  G03F7/091 ,  G03F7/094 ,  G03F7/168 ,  G03F7/2051 ,  G03F7/38

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate, the method includes applying a photoresist layer comprising a photoacid generator to a substrate, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.

Abstract translation: 提供了通过光刻形成的线中的线边缘/宽度粗糙度最小化的方法和装置。 在一个实例中，一种处理衬底的方法，所述方法包括将包含光致酸产生剂的光致抗蚀剂层施加到衬底上，将未被光掩模保护的光致抗蚀剂层的第一部分暴露于光刻曝光工艺中的辐射光，并施加 电场或磁场，以改变基本上沿垂直方向从光致酸发生器产生的光酸的运动。

公开(公告)号：US09177796B2

公开(公告)日：2015-11-03

申请号：US14269010

申请日：2014-05-02

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis Bencher ,  Daniel Lee Diehl ,  Huixiong Dai ,  Yong Cao ,  Tingjun Xu ,  Weimin Zeng ,  Peng Xie

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3105 ,  C23C14/00 ,  C23C14/06

CPC classification number: H01L21/0337 ,  C23C14/0042 ,  C23C14/06 ,  C23C14/14 ,  C23C14/351 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02266 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/31144

Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.

Abstract translation: 本文的实施方案提供了用于形成PVD氧化硅或富硅氧化物或PVD SiN或富硅SiN或富SiC或富硅SiC的方法或前述组合，包括将氢控制掺入到迄今为止参考的化合物 作为SiO x N y C z：H w，其中w，x，y和z可以在0％至100％的浓度范围内变化，作为具有与曝光波长下的光致抗蚀剂基本匹配的光学性质的硬掩模。 因此使相对于光致抗蚀剂光学平坦化的硬掩模。 这允许在硬掩模中的多个序列的光刻和蚀刻，而光致抗蚀剂基本上保持没有光学形貌或反射率变化。

公开(公告)号：US20160329222A1

公开(公告)日：2016-11-10

申请号：US15216521

申请日：2016-07-21

Applicant: Applied Materials, Inc.

Inventor： Peng Xie ,  Christopher Dennis Bencher ,  Huixiong Dai ,  Timothy Michaelson ,  Subhash Deshmukh

IPC: H01L21/67 ,  H01L21/687 ,  C23C16/455

CPC classification number: H01L21/67069 ,  C23C16/45544 ,  G03F7/36 ,  G03F7/405 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/68707

Abstract: In some embodiments, a method of forming an etch mask on a substrate is provided that includes (1) forming a resist layer on a substrate; (2) exposing one or more regions of the resist layer to an energy source so as to alter at least one of a physical property and a chemical property of the exposed regions; (3) performing a hardening process on the resist layer to increase the etch resistance of first regions of the resist layer relative to second regions of the resist layer, the hardening process including exposing the resist layer to one or more reactive species within an atomic layer deposition (ALD) chamber; and (4) dry etching the resist layer to remove the one or more second regions and to form a pattern in the resist layer. Other embodiments are provided.

Abstract translation: 在一些实施例中，提供了在衬底上形成蚀刻掩模的方法，其包括（1）在衬底上形成抗蚀剂层; （2）将抗蚀剂层的一个或多个区域暴露于能量源，以便改变暴露区域的物理性质和化学性质中的至少一个; （3）对抗蚀剂层进行硬化处理以提高抗蚀剂层相对于抗蚀剂层的第二区域的第一区域的耐蚀刻性，硬化过程包括将抗蚀剂层暴露于原子层内的一个或多个反应性物质 沉积（ALD）室; 和（4）干蚀刻抗蚀剂层以除去一个或多个第二区域并在抗蚀剂层中形成图案。 提供其他实施例。