公开(公告)号：US20240304451A1

公开(公告)日：2024-09-12

申请号：US18597346

申请日：2024-03-06

Applicant: COMMISSARIAT À L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Nicolas COUDURIER ,  Philippe RODRIGUEZ

IPC: H01L21/285 ,  C23C14/16 ,  C23C14/30 ,  C23C14/34 ,  C23C14/46

CPC classification number: H01L21/2855 ,  C23C14/165 ,  C23C14/30 ,  C23C14/3464 ,  C23C14/46

Abstract: A method for forming an ohmic contact on a layer of semiconductor material including germanium and tin. The method includes depositing a nickel-germanium layer onto the semiconductor material layer by a physical vapour deposition technique.

公开(公告)号：US20240117490A1

公开(公告)日：2024-04-11

申请号：US17962310

申请日：2022-10-07

Applicant: Applied Materials, Inc.

Inventor： Amir H. TAVAKOLI ,  Ala MORADIAN ,  Tetsuya ISHIKAWA

IPC: C23C16/44 ,  C23C14/02 ,  C23C14/46 ,  C23C16/02 ,  C23C16/455

CPC classification number: C23C16/4404 ,  C23C14/024 ,  C23C14/46 ,  C23C16/0272 ,  C23C16/45544

Abstract: A coating on a processing chamber component includes a metallic bond layer deposited on a surface of the component. A thermal barrier layer is deposited on the bond layer. A substantially non-porous ceramic sealing layer is deposited on the thermal barrier layer. The sealing layer substantially conforms to irregularities of the surface of the thermal barrier layer. A chemistry of the sealing layer is selected for resistance to attack from halogen-containing chemicals.

公开(公告)号：US11885009B2

公开(公告)日：2024-01-30

申请号：US16274202

申请日：2019-02-12

Applicant: UCHICAGO ARGONNE, LLC

Inventor： Tomas Polakovic ,  Valentine Novosad

IPC: C23C14/34 ,  C23C14/46 ,  C23C14/06 ,  C23C14/08

CPC classification number: C23C14/46 ,  C23C14/0641 ,  C23C14/08 ,  C23C14/3407

Abstract: A method of making a thin film can include bombarding a substrate with first ions supplied from a first ion beam; and sputtering from a metal sputtering target substantially simultaneously with the bombardment to deposit a metal-ion film onto the substrate, wherein the method is performed without applied heat, and the metal sputtering target comprises one or more of a metal, a transition metal, a semi-metal, alloys thereof and combinations thereof.

公开(公告)号：US20230110739A1

公开(公告)日：2023-04-13

申请号：US18079923

申请日：2022-12-13

Applicant: BATTELLE SAVANNAH RIVER ALLIANCE, LLC

Inventor： MATTHEW S. WELLONS ,  MICHAEL A. DEVORE, II ,  WENDY W. KUHNE

IPC: G21C3/60 ,  G21C3/62 ,  C23C14/46 ,  C22B60/02 ,  B22F9/02 ,  C23C24/00 ,  B05D1/06

Abstract: Methods for forming particulates that are highly consistent with regard to shape, size, and content are described. Particulates are suitable for use as reference materials. Methods can incorporate actinides and/or lanthanides, e.g., uranium, and can be used for forming certified reference materials for use in the nuclear industry. Methods include formation of an aerosol from an oxalate salt solution, in-line diagnostics, and collection of particles of the aerosol either in a liquid impinger or on a solid surface.

公开(公告)号：US11572617B2

公开(公告)日：2023-02-07

申请号：US15498383

申请日：2017-04-26

Applicant: Applied Materials, Inc.

Inventor： David Fenwick ,  Chengtsin Lee ,  Jennifer Y. Sun ,  Yikai Chen

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/06 ,  C23C14/08 ,  C23C14/00 ,  C23C14/46 ,  C23C16/44 ,  C23C14/30

Abstract: An article comprises a body having a protective coating. The protective coating is a thin film that comprises a metal oxy-fluoride. The metal oxy-fluoride has an empirical formula of MxOyFz, where M is a metal, y has a value of 0.1 to 1.9 times a value of x and z has a value of 0.1 to 3.9 times the value of x. The protective coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%.

公开(公告)号：US11569095B2

公开(公告)日：2023-01-31

申请号：US17328253

申请日：2021-05-24

Applicant: APPLIED Materials, Inc.

Inventor： John Hautala

IPC: H01L21/311 ,  C23C16/50 ,  H01J37/32 ,  C23C16/458 ,  C23C16/455 ,  C23C14/22 ,  H01L21/308 ,  C23C14/34 ,  C23C14/46

Abstract: A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

公开(公告)号：US11566319B2

公开(公告)日：2023-01-31

申请号：US15844251

申请日：2017-12-15

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Vahid Firouzdor ,  Biraja Prasad Kanungo ,  Tom K. Cho ,  Vedapuram S. Achutharaman ,  Ying Zhang

IPC: C04B41/89 ,  C04B41/00 ,  C04B41/52 ,  C04B35/505 ,  C04B35/622 ,  C04B41/45 ,  C04B35/00 ,  C23C14/08 ,  C04B41/50 ,  C23C14/46 ,  C23C14/58 ,  H01J37/32 ,  C04B41/87

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of Y2O3, over 0 mol % to 60 mol % of ZrO2, and 0 mol % to 9 mol % of Al2O3.

公开(公告)号：US20220148762A1

公开(公告)日：2022-05-12

申请号：US17598435

申请日：2020-03-16

Applicant: Fujikura Ltd.

Inventor： Masaki Ohsugi

IPC: H01B12/06 ,  H01B1/08 ,  C23C14/46 ,  C23C14/08 ,  C23C14/22 ,  C23C14/34 ,  C23C14/16 ,  C23C14/58 ,  C25D3/38

Abstract: An oxide superconducting wire includes a superconducting laminate including an oxide superconducting layer disposed, either directly or indirectly, on a substrate, and a stabilization layer which is a Cu plating layer covering an outer periphery of the superconducting laminate. An average crystal grain size of the Cu plating layer is 3.30 μm or more and equal to or less than a thickness of the Cu plating layer.

公开(公告)号：US20210358646A1

公开(公告)日：2021-11-18

申请号：US15930639

申请日：2020-05-13

Applicant: Savannah River Nuclear Solutions, LLC

Inventor： Matthew S. Wellons ,  Michael A. Devore, II ,  Wendy W. Kuhne

IPC: G21C3/60 ,  C23C14/46 ,  G21C3/62

Abstract: Methods for forming particulates that are highly consistent with regard to shape, size, and content are described. Particulates are suitable for use as reference materials. Methods can incorporate actinides and/or lanthanides, e.g., uranium, and can be used for forming certified reference materials for use in the nuclear industry. Methods include formation of an aerosol from an oxalate salt solution, in-line diagnostics, and collection of particles of the aerosol either in a liquid impinger or on a solid surface.

公开(公告)号：US20210104380A1

公开(公告)日：2021-04-08

申请号：US16956419

申请日：2018-12-21

Applicant: Institute of Geological and Nuclear Sciences Limited

Inventor： Richard John Futter ,  Ryan James Davidson ,  Jerome Leveneur ,  John Vedamuthu Kennedy

IPC: H01J37/317 ,  C23C14/56 ,  C23C14/22 ,  C23C14/46 ,  C23C14/34

Abstract: An aspect of the invention provides an ion beam sputtering apparatus comprising an ion source configured to generate a hollow ion beam along a beam axis that is located in a hollow part of the beam; and a sputtering target having a target body that defines at least one target surface, the target body comprising sputterable particles, the target body being located relative to the ion source so that the ion beam hits the at least one target surface to sputter particles from the target body towards a surface of an object to be modified. The target body is shaped so that the particles sputtered towards a surface to be modified are generally sputtered from the sputtering target in radially extending sputter directions relative to the beam axis, the sputter directions being one of (i) directions extending towards the beam axis and (ii) directions extending away from the beam axis.