公开(公告)号：US20250038040A1

公开(公告)日：2025-01-30

申请号：US18227128

申请日：2023-07-27

Applicant: Applied Materials, Inc.

Inventor： Ala MORADIAN ,  Shu-Kwan LAU ,  Zuoming ZHU

IPC: H01L21/687 ,  H01L21/02 ,  H01L21/67

Abstract: Embodiments described herein relate to lift frames for central heating, and related processing chambers and methods. In one or more embodiments, a lift frame for positioning in a processing chamber applicable for use in semiconductor manufacturing includes a shaft. The shaft includes an opening formed in the shaft, and the shaft includes a first material. The lift frame includes a plurality of arms extending outwardly relative to the shaft, and an absorptive mass disposed in the opening of the shaft. The absorptive mass includes a second material having a higher absorptivity than the first material of the shaft.

公开(公告)号：US20240231042A9

公开(公告)日：2024-07-11

申请号：US17971494

申请日：2022-10-21

Applicant: Applied Materials, Inc.

Inventor： Ala MORADIAN ,  Amir H. TAVAKOLI ,  Peter REIMER ,  Shu-Kwan LAU

IPC: G02B7/182 ,  C30B35/00 ,  G02B1/14 ,  G02B7/18 ,  G02B17/00

CPC classification number: G02B7/182 ,  C30B35/00 ,  G02B1/14 ,  G02B7/1815 ,  G02B17/002

Abstract: A reflector and processing chamber having the same are described herein. In one example, a reflector is provided that includes cylindrical body, a cooling channel, and a reflective coating. The cylindrical body has an upper surface and a lower surface. The lower surface has a plurality of concave reflector structures disposed around a centerline of the cylindrical body. The cooling channel disposed in or on the cylindrical body. The reflective coating is disposed on the plurality of concave reflector structures.

公开(公告)号：US20240120220A1

公开(公告)日：2024-04-11

申请号：US17961214

申请日：2022-10-06

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Ala MORADIAN

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52

CPC classification number: H01L21/67201 ,  C23C16/45502 ,  C23C16/4583 ,  C23C16/463 ,  C23C16/52 ,  H01L21/67167

Abstract: The present disclosure relates to chambers and related methods and structures for batch cooling or heating. In one implementation, a chamber applicable for use in semiconductor manufacturing includes a base, a lid, and one or more sidewalls between the base and the lid. The base, the lid, and the one or more sidewalls at least partially define an internal volume. The chamber includes a cassette disposed in the internal volume. The cassette includes a first outer plate, a second outer plate spaced from the first outer plate, and a plurality of levels between the first outer plate and the second outer plate. The plurality of levels include a plurality of substrate supports spaced from each other between the first outer plate and the second outer plate. The chamber includes one or more baffles disposed outwardly of the cassette.

公开(公告)号：US20240018658A1

公开(公告)日：2024-01-18

申请号：US18085371

申请日：2022-12-20

Applicant: Applied Materials, Inc.

Inventor： Zuoming ZHU ,  Ala MORADIAN ,  Shu-Kwan LAU ,  John TOLLE ,  Manjunath SUBBANNA ,  Martin Jeffrey SALINAS ,  Chia Cheng CHIN ,  Thomas KIRSCHENHEITER ,  Saurabh CHOPRA

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/14 ,  C30B25/12 ,  C30B25/10 ,  C30B25/08

CPC classification number: C23C16/45591 ,  C23C16/458 ,  C23C16/46 ,  C30B25/14 ,  C30B25/12 ,  C30B25/10 ,  C30B25/08

Abstract: The present disclosure relates to flow guide structures and heat shield structures, and related methods, for deposition uniformity and process adjustability. In one implementation, an apparatus for substrate processing includes a chamber body that includes a processing volume. The apparatus includes one or more heat sources. The apparatus includes a flow guide structure positioned in the processing volume. The flow guide structure includes one or more first flow dividers that divide the processing volume into a plurality of flow levels, and one or more second flow dividers oriented to intersect the one or more first flow dividers and divide each flow level of the plurality of flow levels into a plurality of flow sections. The flow guide structure includes one or more third flow dividers oriented to intersect the one or more second flow dividers and divide the plurality of flow sections into a plurality of flow zones.

公开(公告)号：US20230407478A1

公开(公告)日：2023-12-21

申请号：US17871607

申请日：2022-07-22

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Ala MORADIAN ,  Tao SHENG ,  Nimrod SMITH ,  Ashur J. ATANOS ,  Vinh N. TRAN

IPC: C23C16/458 ,  C23C16/44

CPC classification number: C23C16/458 ,  C23C16/4408 ,  C23C16/4405

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a process kit for disposition in a processing chamber applicable for use in semiconductor manufacturing includes a plate having a first face and a second face opposing the first face. The process kit includes a liner. The liner includes an annular section, and one or more ledges extending inwardly relative to the annular section. The one or more ledges are configured to support one or more outer regions of the second face of the plate. The liner includes one or more inlet openings extending to an inner surface of the annular section on a first side of the liner, and one or more outlet openings extending to the inner surface of the annular section on a second side of the liner.

公开(公告)号：US20230230859A1

公开(公告)日：2023-07-20

申请号：US17919911

申请日：2021-07-12

Applicant: Applied Materials, Inc.

Inventor： Adel George TANNOUS ,  Schubert S. CHU ,  Shu-Kwan LAU ,  Kartik Bhupendra SHAH ,  Zuoming ZHU ,  Ala MORADIAN ,  Surajit KUMAR ,  Srinivasa RANGAPPA ,  Chia Cheng CHIN ,  Vishwas Kumar PANDEY

IPC: H01L21/67 ,  H01L21/687 ,  H05B3/00

CPC classification number: H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/68771 ,  H05B3/0047

Abstract: A batch processing chamber and a process kit for use therein are provided. The process kit includes an outer liner having an upper outer liner and a lower outer liner, an inner liner, and a top plate and a bottom plate attached to an inner surface of the inner liner. The top plate and the bottom plate form an enclosure together with the inner liner, and a cassette is disposed within the enclosure. The cassette including shelves configured to retain a plurality of substrates thereon. The inner liner has inlet openings disposed on an injection side of the inner liner and configured to be in fluid communication with a gas injection assembly of a processing chamber, and outlet openings disposed on an exhaust side of the inner liner and configured to be in fluid communication with a gas exhaust assembly of the processing chamber. The inner surfaces of the enclosure comprise material configured to cause black-body radiation within the enclosure.

公开(公告)号：US20220364229A1

公开(公告)日：2022-11-17

申请号：US17317565

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Tetsuya ISHIKAWA ,  Swaminathan T. SRINIVASAN ,  Matthias BAUER ,  Manjunath SUBBANNA ,  Ala MORADIAN ,  Kartik Bhupendra SHAH ,  Errol Antonio C SANCHEZ ,  Michael R. RICE ,  Peter REIMER ,  Marc SHULL

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  C30B25/12 ,  C30B25/16 ,  C30B25/10 ,  C23C16/52

Abstract: Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

公开(公告)号：US20220326061A1

公开(公告)日：2022-10-13

申请号：US17229737

申请日：2021-04-13

Applicant: Applied Materials, Inc.

Inventor： Bindusagar MARATH SANKARATHODI ,  Zhiyuan YE ,  Jyothi RAJEEVAN ,  Ala MORADIAN ,  Zuoming ZHU ,  Errol Antonio C. SANCHEZ ,  Patricia M. LIU

IPC: G01F15/00 ,  G01F25/00

Abstract: Aspects generally relate to methods, systems, and apparatus for conducting a calibration operation for a plurality of mass flow controllers (MFCs) of a substrate processing system. In one aspect, a corrected flow curve is created for a range of target flow rates across a plurality of setpoints. In one implementation, a method of conducting a calibration operation for a plurality of mass flow controllers (MFCs) of a substrate processing system includes prioritizing the plurality of MFCs for the calibration operation. The prioritizing includes determining an operation time for each MFC of the plurality of MFCs, and ranking the plurality of MFCs in a rank list according to the operation time for each MFC. The method includes conducting the calibration operation for the plurality of MFCs according to the rank list and during an idle time for the substrate processing system.

公开(公告)号：US20240360590A1

公开(公告)日：2024-10-31

申请号：US18140508

申请日：2023-04-27

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar PANDEY ,  Ala MORADIAN ,  Lori WASHINGTON

IPC: C30B25/14 ,  C23C16/44 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12

CPC classification number: C30B25/14 ,  C23C16/4412 ,  C23C16/4583 ,  C30B25/10 ,  C30B25/12

Abstract: Embodiments of the present disclosure relate to gas exhaust frames including pathways having size variations, for use in a substrate processing chamber, and related apparatus and methods. In one or more embodiments, a processing chamber includes a chamber body, and a window. The processing chamber includes one or more heat sources, a substrate support, a liner, and a pre-heat ring. The processing chamber includes one or more gas inlets, and a first set of exhaust pathways positioned on a first side of a reference plane. The first set of exhaust pathways have a first cross-sectional area gradient that increases along a first direction. The processing chamber includes a second set of exhaust pathways positioned on a second side of the reference plane. The second set of exhaust pathways have a second cross-sectional area gradient that increases along a second direction that is opposite of the first direction.

公开(公告)号：US20240360587A1

公开(公告)日：2024-10-31

申请号：US18223345

申请日：2023-07-18

Applicant: Applied Materials, Inc.

Inventor： Ala MORADIAN ,  Vishwas Kumar PANDEY ,  Lori D. WASHINGTON ,  Saurabh CHOPRA

IPC: C30B25/10 ,  C23C16/46

CPC classification number: C30B25/10 ,  C23C16/46

Abstract: The present disclosure relates to a radiation reflector assembly for use with a semiconductor processing chamber and a substrate processing system having the radiation reflector assembly. The radiation reflector assembly includes a shell body that includes an interior cylindrical wall; and a reflector disk that includes a center hole, a bottom reflective surface, and a top surface. The reflector disk is disposed within and spaced from the interior cylindrical wall in a manner that permits fluid to flow therebetween. The radiation reflector assembly includes an actuator coupled to the reflector disk, and the actuator is operable to axially displace the reflector disk relative to the shell body. The radiation reflector assembly includes an elongated tube extending through the center hole of the reflector disk. A method of processing a substrate with the radiation reflector assembly is also described.