公开(公告)号：US20240018658A1

公开(公告)日：2024-01-18

申请号：US18085371

申请日：2022-12-20

Applicant: Applied Materials, Inc.

Inventor： Zuoming ZHU ,  Ala MORADIAN ,  Shu-Kwan LAU ,  John TOLLE ,  Manjunath SUBBANNA ,  Martin Jeffrey SALINAS ,  Chia Cheng CHIN ,  Thomas KIRSCHENHEITER ,  Saurabh CHOPRA

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/14 ,  C30B25/12 ,  C30B25/10 ,  C30B25/08

CPC classification number: C23C16/45591 ,  C23C16/458 ,  C23C16/46 ,  C30B25/14 ,  C30B25/12 ,  C30B25/10 ,  C30B25/08

Abstract: The present disclosure relates to flow guide structures and heat shield structures, and related methods, for deposition uniformity and process adjustability. In one implementation, an apparatus for substrate processing includes a chamber body that includes a processing volume. The apparatus includes one or more heat sources. The apparatus includes a flow guide structure positioned in the processing volume. The flow guide structure includes one or more first flow dividers that divide the processing volume into a plurality of flow levels, and one or more second flow dividers oriented to intersect the one or more first flow dividers and divide each flow level of the plurality of flow levels into a plurality of flow sections. The flow guide structure includes one or more third flow dividers oriented to intersect the one or more second flow dividers and divide the plurality of flow sections into a plurality of flow zones.

公开(公告)号：US20240429048A1

公开(公告)日：2024-12-26

申请号：US18745485

申请日：2024-06-17

Applicant: Applied Materials, Inc.

Inventor： Ruiying HAO ,  Thomas KIRSCHENHEITER ,  Arvind KUMAR ,  Mahendra PAKALA ,  Roya BAGHI ,  Balasubramanian PRANATHARTHIHARAN ,  Fredrick FISHBURN

IPC: H01L21/02 ,  H01L29/165

Abstract: A semiconductor device and a method for manufacturing thereof. A substrate is provided. At least one silicon layer is formed on top of the substrate. At least one silicon-germanium layer is formed on top of at least one silicon layer. At least one silicon-germanium layer includes at least one n-type dopant. The semiconductor device having at least one silicon layer and at least one silicon-germanium layer is formed.

公开(公告)号：US20240247405A1

公开(公告)日：2024-07-25

申请号：US18100978

申请日：2023-01-24

Applicant: Applied Materials, Inc.

Inventor： Alexandros ANASTASOPOULOS ,  Zuoming ZHU ,  Maribel MALDONADO-GARCIA ,  Thomas KIRSCHENHEITER ,  Flora Fong-Song CHANG

IPC: C30B25/22 ,  C30B15/14 ,  C30B25/12 ,  C30B25/16 ,  C30B29/06 ,  C30B29/08

CPC classification number: C30B25/22 ,  C30B15/14 ,  C30B25/12 ,  C30B25/16 ,  C30B29/06 ,  C30B29/08

Abstract: A method for substrate processing includes flowing one or more process reactive gases into an upper volume of a processing chamber, flowing cleaning gas into a lower volume of the processing chamber, measuring temperature of an inner surface of the lower volume of the processing chamber, and adjusting temperature of the inner surface of the lower volume of the processing chamber, based on the measured temperature.

公开(公告)号：US20240038531A1

公开(公告)日：2024-02-01

申请号：US18098547

申请日：2023-01-18

Applicant: Applied Materials, Inc.

Inventor： Thomas KIRSCHENHEITER ,  John TOLLE ,  Abhishek DUBE ,  Maribel MALDONADO-GARCIA

IPC: H01L21/02 ,  H01L21/304 ,  H10B12/00

CPC classification number: H01L21/02532 ,  H01L21/02507 ,  H01L21/0245 ,  H01L21/0206 ,  H01L21/02381 ,  H01L21/0262 ,  H01L21/304 ,  H10B12/02 ,  H10B12/30

Abstract: A method and apparatus for forming strain relaxed buffers that may be used in semiconductor devices incorporating superlattice structures are provided. The method includes epitaxially depositing a first silicon germanium layer over the substrate. The first silicon germanium layer has a first surface that contacts a frontside surface of the substrate and a second surface opposite the first surface. The first silicon germanium layer has a first thickness and a germanium concentration gradient that increases from the first surface to the second surface. The method further includes epitaxially depositing a silicon germanium capping layer on the first silicon germanium layer. The silicon germanium capping layer has a second thickness and a substantially uniform germanium concentration that is equal to, substantially equal to, or greater than a maximum germanium concentration of the germanium concentration gradient.

公开(公告)号：US20230029344A1

公开(公告)日：2023-01-26

申请号：US17870327

申请日：2022-07-21

Applicant: Applied Materials, Inc.

Inventor： John TOLLE ,  Thomas KIRSCHENHEITER ,  Joe MARGETIS ,  Patricia M. LIU ,  Zuoming ZHU ,  Flora Fong-Song CHANG

IPC: H01L29/15 ,  H01L21/02 ,  H01L29/10

Abstract: A method and apparatus for forming a super-lattice structure on a substrate is described herein. The super-lattice structure includes a plurality of silicon-germanium layers and a plurality of silicon layers disposed in a stacked pattern. The methods described herein produce a super-lattice structure with transition width of less than about 1.4 nm between each of the silicon-germanium layers and an adjacent silicon layer. The methods described herein include flowing one or a combination of a silicon containing gas, a germanium containing gas, and a halogenated species.