Patent search ap:("Applied Materials Page Inc.") AND inv:"Vedapuram S. Achutharaman"

1.

发明授权
Ion beam sputtering with ion assisted deposition for coatings on chamber components 有权

公开(公告)号：US12195839B2

公开(公告)日：2025-01-14

申请号：US18101273

申请日：2023-01-25

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun , Vahid Firouzdor , Biraja Prasad Kanungo , Tom K Cho , Vedapuram S. Achutharaman , Ying Zhang

IPC: C23C14/08 , C04B35/00 , C04B35/505 , C04B35/622 , C04B41/00 , C04B41/45 , C04B41/50 , C04B41/52 , C04B41/87 , C04B41/89 , C23C14/46 , C23C14/58 , H01J37/32

Abstract: A method includes performing ion beam sputtering with ion assisted deposition to deposit a protective layer on a surface of a body. The protective layer is a plasma resistant rare earth-containing film of a thickness less than 1000 μm. The porosity of the protective layer is below 1%. The plasma resistant rare earth-containing film consists of 40 mol % to less than 100 mol % of Y2O3, over 0 mol % to 60 mol % of ZrO2, and 0 mol % to 9 mol % of Al2O3.

2.

发明授权
Ion beam sputtering with ion assisted deposition for coatings on chamber components 有权

公开(公告)号：US11566318B2

公开(公告)日：2023-01-31

申请号：US15712094

申请日：2017-09-21

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun , Vahid Firouzdor , Biraja Prasad Kanungo , Tom K. Cho , Vedapuram S. Achutharaman , Ying Zhang

IPC: C04B41/89 , C04B41/00 , C04B41/52 , C04B35/505 , C04B35/622 , C04B41/45 , C04B35/00 , C23C14/08 , C04B41/50 , C23C14/46 , C23C14/58 , H01J37/32 , C04B41/87

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film is selected from a group consisting of an Er—Y composition, an Er—Al—Y composition, an Er—Y—Zr composition, and an Er—Al composition.

3.

发明授权
Ion beam sputtering with ion assisted deposition for coatings on chamber components 有权

公开(公告)号：US11566317B2

公开(公告)日：2023-01-31

申请号：US15711885

申请日：2017-09-21

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun , Vahid Firouzdor , Biraja Prasad Kanungo , Tom K. Cho , Vedapuram S. Achutharaman , Ying Zhang

IPC: C04B41/89 , C04B41/00 , C04B41/52 , C04B35/505 , C04B35/622 , C04B41/45 , C04B35/00 , C23C14/08 , C04B41/50 , C23C14/46 , C23C14/58 , H01J37/32 , C04B41/87

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide is selected from a group consisting of YF3, Er4Al2O9, ErAlO3, and a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.

4.

发明申请
ION BEAM SPUTTERING WITH ION ASSISTED DEPOSITION FOR COATINGS ON CHAMBER COMPONENTS 审中-公开

公开(公告)号：US20180105922A1

公开(公告)日：2018-04-19

申请号：US15844251

申请日：2017-12-15

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun , Vahid Firouzdor , Biraja Prasad Kanungo , Tom K. Cho , Vedapuram S. Achutharaman , Ying Zhang

IPC: C23C14/08 , C04B35/505 , C04B35/622 , C04B41/00 , C04B41/45 , C04B41/50 , C23C14/46 , C04B41/87 , C04B41/89 , H01J37/32 , C23C14/58 , C04B41/52

CPC classification number: C23C14/088 , C04B35/00 , C04B35/505 , C04B35/62222 , C04B41/009 , C04B41/4529 , C04B41/5045 , C04B41/52 , C04B41/87 , C04B41/89 , C04B2235/3217 , C04B2235/3222 , C04B2235/3225 , C04B2235/3246 , C04B2235/3418 , C04B2235/3826 , C04B2235/3873 , C04B2235/428 , C04B2235/445 , C23C14/08 , C23C14/083 , C23C14/46 , C23C14/5806 , H01J37/32477 , Y10T428/26 , Y10T428/265 , C04B35/10 , C04B35/50 , C04B35/14 , C04B35/584 , C04B35/565 , C04B41/5032 , C04B41/5042 , C04B41/5035 , C04B2103/54

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of Y2O3, over 0 mol % to 60 mol % of ZrO2, and 0 mol % to 9 mol % of Al2O3.

5.

发明授权
Ion beam sputtering with ion assisted deposition for coatings on chamber components 有权

公开(公告)号：US09797037B2

公开(公告)日：2017-10-24

申请号：US15211993

申请日：2016-07-15

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun , Vahid Firouzdor , Biraja Prasad Kanungo , Tom K. Cho , Vedapuram S. Achutharaman , Ying Zhang

IPC: C23C14/08 , C23C14/46 , C04B41/50 , C04B41/52 , C23C14/58 , C04B41/89 , C04B35/505 , C04B35/622 , H01J37/32 , C04B41/87 , C04B41/00

CPC classification number: C23C14/088 , C04B35/00 , C04B35/505 , C04B35/62222 , C04B41/009 , C04B41/4529 , C04B41/5045 , C04B41/52 , C04B41/87 , C04B41/89 , C04B2235/3217 , C04B2235/3222 , C04B2235/3225 , C04B2235/3246 , C04B2235/3418 , C04B2235/3826 , C04B2235/3873 , C04B2235/428 , C04B2235/445 , C23C14/08 , C23C14/083 , C23C14/46 , C23C14/5806 , H01J37/32477 , Y10T428/26 , Y10T428/265 , C04B35/10 , C04B35/50 , C04B35/14 , C04B35/584 , C04B35/565 , C04B41/5032 , C04B41/5042 , C04B41/5035 , C04B2103/54

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide has a composition of 40-45 mol % of Y2O3, 5-10 mol % of ZrO2, 35-40 mol % of Er2O3, 5-10 mol % of Gd2O3, and 5-15 mol % of SiO2.

6.

发明申请
ION BEAM SPUTTERING WITH ION ASSISTED DEPOSITION FOR COATINGS ON CHAMBER COMPONENTS 有权
Title translation: 具有离子辅助沉积的离子束溅射用于在室内组分上涂覆

公开(公告)号：US20150158775A1

公开(公告)日：2015-06-11

申请号：US14562339

申请日：2014-12-05

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun , Vahid Firouzdor , Biraja Prasad Kanungo , Tom K. Cho , Vedapuram S. Achutharaman , Ying Zhang

IPC: C04B41/50 , C23C14/22 , C04B41/00

CPC classification number: C23C14/088 , C04B35/00 , C04B35/505 , C04B35/62222 , C04B41/009 , C04B41/4529 , C04B41/5045 , C04B41/52 , C04B41/87 , C04B41/89 , C04B2235/3217 , C04B2235/3222 , C04B2235/3225 , C04B2235/3246 , C04B2235/3418 , C04B2235/3826 , C04B2235/3873 , C04B2235/428 , C04B2235/445 , C23C14/08 , C23C14/083 , C23C14/46 , C23C14/5806 , H01J37/32477 , Y10T428/26 , Y10T428/265 , C04B35/10 , C04B35/50 , C04B35/14 , C04B35/584 , C04B35/565 , C04B41/5032 , C04B41/5042 , C04B41/5035 , C04B2103/54

Abstract: A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 μm.

Abstract translation: 制造制品的方法包括提供用于蚀刻反应器的部件。然后进行离子辅助沉积（IBS-IAD）的离子束溅射，以在组件的至少一个表面上沉积保护层，其中保护层是厚度小于1000μm的耐等离子体膜。

7.

发明授权
Minimization of ring erosion during plasma processes 有权

公开(公告)号：US10109464B2

公开(公告)日：2018-10-23

申请号：US15335074

申请日：2016-10-26

Applicant: Applied Materials, Inc.

Inventor： Olivier Joubert , Olivier Luere , Vedapuram S. Achutharaman

IPC: H01L21/302 , H01L21/461 , H01L21/311 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01J37/32 , H01L21/3065 , H01L21/67 , H01L21/687 , C23C4/02 , C23C4/10 , C23C4/00 , C23C4/134 , C23C16/40 , C23C16/44

Abstract: Methods are disclosed for etching a substrate. The method includes preferentially coating cover ring relative other chamber components in the processing chamber, while under vacuum, and while a substrate is not present in the processing chamber. The substrate is subsequently etched the processing chamber. After etching, the interior of the processing chamber is cleaned after the substrate has been removed.