公开(公告)号：US11894221B2

公开(公告)日：2024-02-06

申请号：US16960384

申请日：2019-05-23

Applicant: JX Metals Corporation

Inventor： Yasuyuki Iwabuchi ,  Manami Masuda ,  Takashi Kosho

IPC: H01J37/34 ,  C23C14/34 ,  C22C19/07 ,  H01F41/18 ,  H01F10/16 ,  G11B5/65 ,  G11B5/851

CPC classification number: H01J37/3429 ,  C22C19/07 ,  C23C14/3414 ,  G11B5/656 ,  G11B5/658 ,  G11B5/851 ,  H01F10/16 ,  H01F41/183

Abstract: Provided is a sputtering target, comprising: from 0.001 mol % to 0.5 mol % of Bi; from 45 mol % or less of Cr; 45 mol % or less of Pt; 60 mol % or less of Ru; and a total of 1 mol % to 35 mol % of at least one metal oxide, the balance being Co and inevitable impurities.

公开(公告)号：US11834738B2

公开(公告)日：2023-12-05

申请号：US17956281

申请日：2022-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonmyoung Lee ,  Whankyun Kim ,  Eunsun Noh ,  Jeong-heon Park ,  Junho Jeong

IPC: C23C14/54 ,  C23C14/00 ,  G11B5/851 ,  H10B61/00 ,  H10N50/01

CPC classification number: C23C14/541 ,  C23C14/0057 ,  G11B5/851 ,  H10B61/00 ,  H10N50/01

Abstract: A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.

公开(公告)号：US20190185987A1

公开(公告)日：2019-06-20

申请号：US16322984

申请日：2017-08-31

Applicant: JX Nippon Mining & Metals Corporation

Inventor： Atsushi Sato ,  Hideo Takami ,  Yuichiro Nakamura

IPC: C23C14/34 ,  C22C38/00 ,  G11B5/851

CPC classification number: C23C14/3414 ,  B22F1/00 ,  B22F1/0011 ,  B22F3/14 ,  B22F3/15 ,  B22F9/04 ,  B22F2301/35 ,  B22F2304/10 ,  C22C5/04 ,  C22C28/00 ,  C22C38/00 ,  C23C14/34 ,  G11B5/64 ,  G11B5/851

Abstract: Provided is a sputtering target which can lower a heat treatment temperature for ordering a Fe—Pt magnetic phase and can suppress generation of particles during sputtering. The sputtering target is a nonmagnetic material-dispersed sputtering target containing Fe, Pt and Ge. The sputtering target includes at least one magnetic phase satisfying a composition represented by (Fe1-αPtα)1-βGeβ, as expressed in an atomic ratio for Fe, Pt and Ge, in which α and β represent numbers meeting 0.35≤α≤0.55 and 0.05≤β≤0.2, respectively. The magnetic phase has a ratio (SGe30mass%/SGe) of 0.5 or less. The ratio (SGe30mass%/SGe) is an average area ratio of Ge-based alloy phases containing a Ge concentration of 30% by mass or more (SGe30mass%) to an area ratio of Ge (SGe) calculated from the entire composition of the sputtering target, in element mapping by EPMA of a polished surface obtained by polishing a cross section perpendicular to a sputtering surface of the sputtering target.

公开(公告)号：US09928866B2

公开(公告)日：2018-03-27

申请号：US13741144

申请日：2013-01-14

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Shinji Uchida

IPC: C23C14/34 ,  G11B5/84 ,  G11B5/65 ,  G11B5/851 ,  C23C14/56

CPC classification number: G11B5/84 ,  C23C14/34 ,  C23C14/3414 ,  C23C14/3464 ,  C23C14/568 ,  G11B5/65 ,  G11B5/851

Abstract: A method for manufacturing a magnetic recording medium includes reducing and eliminating impurity gas present in a chamber. A magnetic recording layer is formed and an active material layer is also formed immediately below or immediately above the magnetic recording layer in respective chambers. The active material layer is formed in the same chamber or with a gate opened between the magnetic recording layer chamber and the active material layer chamber.

公开(公告)号：US20170186593A1

公开(公告)日：2017-06-29

申请号：US15301346

申请日：2015-01-19

Applicant: Seagate Technology LLC

Inventor： Weilu XU

IPC: H01J37/34 ,  C23C14/35 ,  G11B5/851 ,  C23C14/34

CPC classification number: H01J37/3423 ,  C23C14/3407 ,  C23C14/35 ,  G11B5/851 ,  H01J37/3405 ,  H01J37/3429

Abstract: Provided herein is an apparatus that includes a body with a top surface and a recess in the top surface. The top surface, excluding the recess, is substantially planar. The recess is confined to an area that is defined by an inner diameter of the top surface of the body.

公开(公告)号：US20170140784A1

公开(公告)日：2017-05-18

申请号：US15127527

申请日：2015-03-19

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Hiroaki SUKEGAWA ,  Zhenchao WEN ,  Seiji MITANI ,  Koichiro INOMATA ,  Takao FURUBAYASHI ,  Jason Paul HADORN ,  Tadakatsu OHKUBO ,  Kazuhiro HONO ,  Jungwoo KOO

IPC: G11B5/65 ,  G11B5/73 ,  G11B5/851

CPC classification number: G11B5/653 ,  G11B5/3909 ,  G11B5/65 ,  G11B5/656 ,  G11B5/66 ,  G11B5/7315 ,  G11B5/7325 ,  G11B5/8404 ,  G11B5/851 ,  G11C11/161 ,  H01F10/123 ,  H01F10/30 ,  H01F10/3286

Abstract: Disclosed is a perpendicularly magnetized film structure that uses a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow with high quality, the structure comprising any one substrate (5) of a cubic single crystal substrate having a (001) plane, or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer (6) formed on the substrate (5) from a thin film of a metal having an hcp structure, such as Ru or Re, in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the direction or the (001) orientation of the substrate (5); and a perpendicularly magnetized layer (7) located on the metal underlayer (6) and formed from a cubic material selected from the group consisting of a Co-based Heusler alloy, a cobalt-iron (CoFe) alloy having a bcc structure, and the like, as a constituent material, and grown to have the (001) plane.

公开(公告)号：US09418693B2

公开(公告)日：2016-08-16

申请号：US14672800

申请日：2015-03-30

Applicant: Seagate Technology LLC

Inventor： Weilu Xu ,  Miaogen Lu ,  Mariana Rodica Munteanu ,  Michael Z. Wu ,  Shanghsien A. Rou ,  Steve Kuo-Hsing Hwang ,  Edward T. Yen

IPC: G11B5/65 ,  G11B5/667 ,  G11B5/73 ,  G11B5/851

CPC classification number: G11B5/65 ,  G11B5/667 ,  G11B5/7325 ,  G11B5/851

Abstract: An embodiment of the invention relates to a perpendicular magnetic recording medium comprising (1) a substrate, (2) an interlayer comprising hexagonal columns and (3) a magnetic layer, wherein the magnetic layer is deposited applying a bias voltage to the substrate such that the magnetic layer comprises magnetic grains having substantially no sub-grains within the magnetic layer, and the magnetic layer has perpendicular magnetic anisotropy.

Abstract translation: 本发明的一个实施例涉及一种垂直磁记录介质，其包括（1）基板，（2）包括六边形列的中间层和（3）磁性层，其中磁性层被沉积到偏压基板上，使得 磁性层包括在磁性层内基本上没有亚晶粒的磁性颗粒，并且磁性层具有垂直的磁各向异性。

公开(公告)号：US09376746B2

公开(公告)日：2016-06-28

申请号：US13715786

申请日：2012-12-14

Applicant: Martin A. Hilkene ,  Roman Gouk ,  Matthew D. Scotney-Castle ,  Peter I. Porshnev

Inventor： Martin A. Hilkene ,  Roman Gouk ,  Matthew D. Scotney-Castle ,  Peter I. Porshnev

IPC: C23C14/48 ,  C23C14/04

CPC classification number: C23C14/5826 ,  C23C14/042 ,  C23C14/0605 ,  C23C14/48 ,  C23C14/5873 ,  G11B5/62 ,  G11B5/85 ,  G11B5/851 ,  G11B5/858

Abstract: Embodiments described herein provide methods and apparatus for treating a magnetic substrate having an imprinted, oxygen-reactive mask formed thereon by implanting ions into a magnetically active surface of the magnetic substrate through the imprinted oxygen-reactive mask, wherein the ions do not reduce the oxygen reactivity of the mask, and removing the mask by exposing the substrate to an oxygen-containing plasma. The mask may be amorphous carbon, through which carbon-containing ions are implanted into the magnetically active surface. The carbon-containing ions, which may also contain hydrogen, may be formed by activating a mixture of hydrocarbon gas and hydrogen. A ratio of the hydrogen and the hydrocarbon gas may be selected or adjusted to control the ion implantation.

Abstract translation: 本文所述的实施方案提供了用于处理具有通过印刷的氧反应性掩模将离子注入到磁性基底的磁性活性表面中的其上形成有印记的氧反应性掩模的磁性基底的方法和装置，其中离子不会减少氧 掩模的反应性，以及通过将衬底暴露于含氧等离子体来除去掩模。 掩模可以是无定形碳，将含碳离子注入到磁性活性表面中。 也可以含有氢的含碳离子可以通过活化烃气体和氢气的混合物而形成。 可以选择或调节氢气和烃气体的比例以控制离子注入。

公开(公告)号：US09358612B2

公开(公告)日：2016-06-07

申请号：US14330775

申请日：2014-07-14

Applicant: TANAKA KIKINZOKU KOGYO K.K.

Inventor： Takanobu Miyashita ,  Yasuyuki Goto ,  Takamichi Yamamoto ,  Ryousuke Kushibiki ,  Masahiro Aono ,  Masahiro Nishiura

IPC: C23C14/24 ,  B22F3/12 ,  B22F9/08 ,  C23C14/34 ,  C22C1/05 ,  C22C5/04 ,  C22C32/00 ,  G11B5/851 ,  B22F9/04 ,  C22C1/04 ,  C22C1/10 ,  H01J37/34 ,  C23C14/06 ,  C22C38/00 ,  C22C38/16

CPC classification number: B22F3/12 ,  B22F9/04 ,  B22F9/08 ,  B22F9/082 ,  B22F2201/03 ,  B22F2999/00 ,  C22C1/0466 ,  C22C1/05 ,  C22C1/10 ,  C22C5/04 ,  C22C32/00 ,  C22C38/002 ,  C22C38/16 ,  C23C14/0635 ,  C23C14/34 ,  C23C14/3414 ,  G11B5/851 ,  H01J37/3429 ,  H01J37/3491 ,  H01J2237/3322 ,  H01J2237/3323

Abstract: An FePt-based sputtering target contains Fe, Pt, and a metal oxide, and further contains one or more kinds of metal elements other than Fe and Pt, wherein the FePt-based sputtering target has a structure in which an FePt-based alloy phase and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and less than 60 at % and the one or more kinds of metal elements in an amount of more than 0 at % and 20 at % or less with the balance being Fe and unavoidable impurities and with the total amount of Pt and the one or more kinds of metal elements being 60 at % or less, and wherein the metal oxide is contained in an amount of 20 vol % or more and 40 vol % or less based on the total amount of the target.

Abstract translation: FePt系溅射靶包含Fe，Pt和金属氧化物，并且还含有除Fe和Pt以外的一种以上的金属元素，其中，FePt系溅射靶具有FePt系合金相 含有不可避免的杂质的金属氧化物相相互分散，含有40at％以上且小于60at％的Pt的FePt系合金相和超过一个以上的金属元素 0原子％和20原子％以下，余量为Fe和不可避免的杂质，Pt的总量和一种或多种金属元素的含量为60原子％以下，其中金属氧化物的含量 为20体积％以上且40体积％以下。

公开(公告)号：US09343096B2

公开(公告)日：2016-05-17

申请号：US14193239

申请日：2014-02-28

Applicant: Kabushiki Kaisha Toshiba

Inventor： Akira Watanabe ,  Takeshi Iwasaki ,  Kazutaka Takizawa ,  Kaori Kimura

IPC: G11B5/73 ,  G11B5/851 ,  G11B5/84

CPC classification number: G11B5/7325 ,  G11B5/732 ,  G11B5/8404 ,  G11B5/851

Abstract: According to one embodiment, a perpendicular magnetic recording medium is provided, which includes a non-magnetic granular underlayer formed on a substrate and containing metal grains of a first metal and a grain boundary layer surrounding the metal grains, each metal grain including a projection projecting from the boundary layer and a bottom portion embedded in the grain boundary layer, and a contact angle of the edge of the projection to the surface of the grain boundary layer being 45° to 85°, a non-magnetic intermediate layer formed on a surface of each projection and a magnetic recording layer having a projection pattern formed on the basis of a pattern of the projections in the non-magnetic intermediate layer via the non-magnetic intermediate layer.

Abstract translation: 根据一个实施例，提供了一种垂直磁记录介质，其包括形成在基板上的非磁性颗粒状底层，并且包含围绕金属颗粒的第一金属和晶界层的金属颗粒，每个金属颗粒包括突起 从所述边界层和嵌入在所述晶界层中的底部，所述突起的边缘与所述晶界层的表面的接触角为45°〜85°，形成在所述表面上的非磁性中间层 和具有通过非磁性中间层在非磁性中间层中基于突起图案形成的突起图案的磁记录层。