公开(公告)号：US20230030927A1

公开(公告)日：2023-02-02

申请号：US17959074

申请日：2022-10-03

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  James ROGERS ,  Daniel Sang BYUN ,  Evgeny KAMENETSKIY ,  Yue GUO ,  Kartik RAMASWAMY ,  Valentin N. TODOROW ,  Olivier LUERE ,  Linying CUI

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/683

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US20220399183A1

公开(公告)日：2022-12-15

申请号：US17352176

申请日：2021-06-18

Applicant: Applied Materials, Inc.

Inventor： Linying CUI ,  James ROGERS ,  Rajinder DHINDSA ,  Kartik RAMASWAMY

IPC: H01J37/32 ,  H01J37/305 ,  H01L21/3065

Abstract: Embodiments provided herein include an apparatus and methods for the plasma processing of a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to reducing defectivity in features formed on the surface of the substrate, improving plasma etch rate, and increasing selectivity of etching material to mask and/or etching material to stop layer. In some embodiments, the apparatus and methods enable processes that can be used to prevent or reduce the effect of trapped charges, disposed within features formed on a substrate, on the etch rate and defect formation. In some embodiments, the plasma processing methods include the synchronization of the delivery of pulsed-voltage (PV) waveforms, and alternately the delivery of a PV waveform and a radio frequency (RF) waveform, so as to allow for the independent control of generation of electrons that are provided, during one or more stages of a PV waveform cycle, to neutralize the trapped charges formed in the features formed on the substrate.

公开(公告)号：US20240030002A1

公开(公告)日：2024-01-25

申请号：US18375886

申请日：2023-10-02

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  James ROGERS ,  Daniel Sang BYUN ,  Evgeny KAMENETSKIY ,  Yue GUO ,  Kartik RAMASWAMY ,  Valentin N. TODOROW ,  Olivier LUERE ,  Linying CUI

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/683

CPC classification number: H01J37/32128 ,  H01J37/32146 ,  H01J37/32183 ,  H01L21/31116 ,  H01J37/32577 ,  H01J37/32568 ,  H01J37/32174 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/6831 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01J2237/2007

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US20220157561A1

公开(公告)日：2022-05-19

申请号：US17159133

申请日：2021-01-26

Applicant: Applied Materials, Inc.

Inventor： Linying CUI ,  James ROGERS

IPC: H01J37/32

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for controlling an ion energy distribution during plasma processing. In an embodiment, the apparatus includes a substrate support that has a body having a substrate electrode for applying a substrate voltage to a substrate, and an edge ring electrode embedded for applying an edge ring voltage to an edge ring. The apparatus further includes a substrate voltage control circuit coupled to the substrate electrode, and an edge ring voltage control circuit coupled to the edge ring electrode. The substrate electrode, edge ring electrode, or both are coupled to a power module configured to actively control an energy distribution function width of ions reaching the substrate, edge ring, or both. Methods for controlling an energy distribution function width of ions during substrate processing are also described.

公开(公告)号：US20240355587A1

公开(公告)日：2024-10-24

申请号：US18138733

申请日：2023-04-24

Applicant: Applied Materials, Inc.

Inventor： Linying CUI ,  James ROGERS ,  Rajinder DHINDSA

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/3344

Abstract: Apparatus and methods for controlling the uniformity of a plasma formed using a radio frequency (RF) source power assembly that includes one or more resonant tuning circuits coupled to two or more electrodes disposed within a multi-electrode source assembly. Improved plasma uniformity control and reduced system cost are achieved by eliminating multiple RF generators and matches that power the multiple electrodes separately. Multiple frequencies may also be provided to multiple electrodes at the same time, which can include another cost savings when using a multi-frequency RF source assembly. Local plasma density and sheath voltage over a surface of a substrate are controlled with segmented electrodes disposed within the processing region of a plasma processing chamber. The ion flux and direction, as well as energetic electron flux towards the substrate, are controlled to address the plasma non-uniformity and global tilt during processing of a semiconductor substrate.

公开(公告)号：US20240153741A1

公开(公告)日：2024-05-09

申请号：US17983926

申请日：2022-11-09

Applicant: Applied Materials, Inc.

Inventor： Linying CUI ,  James ROGERS ,  Daniel Sang BYUN ,  Rajinder DHINDSA ,  Keith HERNANDEZ

IPC: H01J37/32

CPC classification number: H01J37/32128 ,  H01J37/32146 ,  H01J37/32091 ,  H01J2237/3341

Abstract: Embodiments of the disclosure provided herein include a method for processing a substrate in a plasma processing system. The method includes receiving a first synchronization waveform signal from a controller, delivering a first burst of first voltage pulses to an electrode assembly after receiving a first portion of the first synchronization waveform signal, wherein at least one first parameter of the first voltage pulses is set to a first value based on a first waveform parameter within the first portion of the first synchronization waveform signal, and delivering a second burst of second voltage pulses to the electrode assembly after receiving a second portion of the first synchronization waveform signal, wherein the at least one first parameter of the first voltage pulses is set to a second value based on a difference in the first waveform parameter within the second portion of the first synchronization waveform signal.

公开(公告)号：US20200381216A1

公开(公告)日：2020-12-03

申请号：US16994190

申请日：2020-08-14

Applicant: Applied Materials, Inc.

Inventor： Linying CUI ,  James ROGERS

IPC: H01J37/32

Abstract: The present disclosure relates to apparatus and methods that manipulate the amplitude and phase of the voltage or current of an edge ring. The apparatus includes an electrostatic chuck having a chucking electrode embedded therein for chucking a substrate to the electrostatic chuck. The apparatus further includes a baseplate underneath the substrate to feed RF power to the substrate. The apparatus further includes an edge ring disposed over the electrostatic chuck. The apparatus further includes an edge ring electrode located underneath the edge ring. The apparatus further includes a radio frequency (RF) circuit including a first variable capacitor coupled to the edge ring electrode.

公开(公告)号：US20200161155A1

公开(公告)日：2020-05-21

申请号：US16197006

申请日：2018-11-20

Applicant: Applied Materials, Inc.

Inventor： James ROGERS ,  Linying CUI ,  Leonid Dorf

IPC: H01L21/683 ,  H01J37/32 ,  H01J37/248

Abstract: Embodiments of the present disclosure generally relate to a system used in semiconductor manufacturing. More specifically, embodiments of the present disclosure relate to a system for pulsed DC biasing and clamping a substrate. In one embodiment, the system includes a plasma chamber having an ESC for supporting a substrate. An electrode is embedded in the ESC and is electrically coupled to a biasing and clamping circuit. The biasing and clamping circuit includes at least a shaped DC pulse voltage source and a clamping network. The clamping network includes a DC voltage source and a diode, and a resistor. The shaped DC pulse voltage source and the clamping network are connected in parallel. The biasing and clamping network automatically maintains a substantially constant clamping voltage, which is a voltage drop across the electrode and the substrate when the substrate is biased with pulsed DC voltage, leading to improved clamping of the substrate.

公开(公告)号：US20230360892A1

公开(公告)日：2023-11-09

申请号：US18356915

申请日：2023-07-21

Applicant: Applied Materials, Inc.

Inventor： James ROGERS ,  Linying CUI ,  Rajinder DHINDSA

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01L21/3065

CPC classification number: H01J37/32642 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68721 ,  H01L21/3065 ,  H01J37/32724 ,  H01L21/67103 ,  H01J2237/2001

Abstract: Embodiments described herein provide methods and apparatus used to control a processing result profile proximate to a circumferential edge of a substrate during the plasma-assisted processing thereof. In one embodiment, a substrate support assembly features a first base plate and a second base plate circumscribing the first base plate. The first and second base plates each have one or more respective first and second cooling disposed therein. The substrate support assembly further features a substrate support disposed on and thermally coupled to the first base plate, and a biasing ring disposed on and thermally coupled to the second base plate. Here, the substrate support and the biasing ring are each formed of a dielectric material. The substrate support assembly further includes an edge ring biasing electrode embedded in the dielectric material of the biasing ring and an edge ring disposed on the biasing ring.

公开(公告)号：US20220399193A1

公开(公告)日：2022-12-15

申请号：US17537270

申请日：2021-11-29

Applicant: Applied Materials, Inc.

Inventor： Linying CUI ,  James ROGERS

IPC: H01J37/32

Abstract: Embodiments provided herein generally include apparatus, e.g., plasma processing systems and methods for the plasma processing of a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to improving process uniformity across the surface of the substrate, reducing defectivity on the surface of the substrate, or both. In some embodiments, the apparatus and methods provide for improved control over the uniformity of a plasma formed over the edge of a substrate and/or the distribution of ion energies at the surface of the substrate. The improved control over the plasma uniformity may be used in combination with substrate handling methods, e.g., de-chucking methods, to reduce particulate-related defectivity on the surface of the substrate. In some embodiments, the improved control over the plasma uniformity is used to preferentially clean accumulated processing byproducts from portions of the edge ring during an in-situ plasma chamber cleaning process.