公开(公告)号：US20240329549A1

公开(公告)日：2024-10-03

申请号：US18604063

申请日：2024-03-13

Applicant: Ushio Denki Kabushiki Kaisha

Inventor： Naoya SOHARA ,  Hiroyuki SUZUKI

IPC: G03F9/00 ,  G03F7/00

CPC classification number: G03F9/7096 ,  G03F7/70716 ,  G03F9/7049 ,  G03F9/7088

Abstract: An exposure apparatus includes: a light-emission unit that emits exposure light; a mask stage that holds an exposure mask; a workpiece stage that holds a workpiece; a projection optical system that irradiates the workpiece held by the workpiece stage with the exposure light emitted from the light-emission unit through the exposure mask; a reflective member disposed in an irradiation region for the exposure light applied from the projection optical system in a step of detecting a mask mark of the exposure mask; an alignment microscope that is disposed in an optical path of the exposure light applied to the mask mark and captures an image of the mask mark on the basis of reflected light reflected by the reflective member in the detection step; and a moving mechanism that moves the reflective member from a position deviated from the irradiation region to the irradiation region in the detection step.

公开(公告)号：US10007192B2

公开(公告)日：2018-06-26

申请号：US14507553

申请日：2014-10-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Jun Ye ,  Yu Cao ,  James Patrick Koonmen

IPC: G06F17/50 ,  G03F7/20 ,  G05B13/04 ,  G03F9/00 ,  B29C64/386

CPC classification number: G03F7/70525 ,  B29C64/386 ,  G03F9/7096 ,  G05B13/04

Abstract: The present invention provides a number of innovations in the area of computational process control (CPC). CPC offers unique diagnostic capability during chip manufacturing cycle by analyzing temporal drift of a lithography apparatus/ process, and provides a solution towards achieving performance stability of the lithography apparatus/process. Embodiments of the present invention enable optimized process windows and higher yields by keeping performance of a lithography apparatus and/or parameters of a lithography process substantially close to a pre-defined baseline condition. This is done by comparing the measured temporal drift to a baseline performance using a lithography process simulation model. Once in manufacturing, CPC optimizes a scanner for specific patterns or reticles by leveraging wafer metrology techniques and feedback loop, and monitors and controls, among other things, overlay and/or CD uniformity (CDU) performance over time to continuously maintain the system close to the baseline condition.

公开(公告)号：US09939739B2

公开(公告)日：2018-04-10

申请号：US15056295

申请日：2016-02-29

Applicant: NIKON CORPORATION

Inventor： Naoyuki Kobayashi ,  Akikazu Tanimoto

IPC: G03B27/42 ,  G03B27/52 ,  G03F7/20 ,  G03F7/00 ,  G03F9/00

CPC classification number: G03F7/7085 ,  G03B27/52 ,  G03F7/00 ,  G03F7/2041 ,  G03F7/70316 ,  G03F7/70341 ,  G03F7/70775 ,  G03F7/70916 ,  G03F7/70925 ,  G03F7/70958 ,  G03F9/7015 ,  G03F9/7088 ,  G03F9/7096

Abstract: A liquid immersion exposure method exposes a substrate with exposure light through liquid, and uses a projection system, a stage system having a holder that holds the substrate, a supply port via which the liquid is supplied arranged such that an upper surface of the substrate faces the supply port and that is spaced a first distance from an optical axis of the projection system, and a recovery port via which the liquid is collected arranged such that the upper surface of the substrate faces the recovery port, which is spaced a second distance greater than the first distance from the optical axis of the projection system, and that encircles the supply port. In the method, the substrate held on the holder is positioned based on a detection result of an alignment system that detects an alignment mark of the substrate not through the liquid.

公开(公告)号：US09329505B2

公开(公告)日：2016-05-03

申请号：US13595033

申请日：2012-08-27

Applicant: Fumiaki Mizutani ,  Yutaka Watanabe

Inventor： Fumiaki Mizutani ,  Yutaka Watanabe

IPC: G03B27/58 ,  G03F9/00 ,  G03F7/20

CPC classification number: G03F9/7096 ,  G03F7/709 ,  G03F7/70991 ,  G03F9/7038

Abstract: The present invention provides a lithography system including an obtaining unit which obtains a transfer function describing a relationship between first vibration generated in one lithography apparatus of two lithography apparatuses among at least three lithography apparatuses, and second vibration generated in the other lithography apparatus upon transmission of the first vibration to the other lithography apparatus, and a calculator which calculates, based on the transfer function, an amount of vibration of a first lithography apparatus among the at least three lithography apparatuses due to vibration of lithography apparatuses, other than the first lithography apparatus, and a controller which controls the lithography apparatuses other than the first lithography apparatus, so that the amount of vibration calculated falls below a tolerance.

Abstract translation: 本发明提供了一种光刻系统，包括：获得单元，其获得描述在至少三个光刻设备中的两个光刻设备的一个光刻设备中产生的第一振动与在另一个光刻设备中产生的第二振动之间的关系的传递函数， 对另一光刻设备的第一振动，以及计算器，其基于传递函数，计算由于光刻设备的振动而导致的至少三个光刻设备中的第一光刻设备的振动量，第一光刻设备 以及控制除第一光刻设备之外的光刻设备的控制器，使得所计算的振动量低于公差。

公开(公告)号：US09304391B2

公开(公告)日：2016-04-05

申请号：US13814222

申请日：2011-07-26

Applicant: Michinobu Mizumura ,  Toshinari Arai

Inventor： Michinobu Mizumura ,  Toshinari Arai

IPC: G03F7/20 ,  G03F1/42 ,  G03F1/38 ,  G03F9/00 ,  G02B3/00

CPC classification number: G03F1/42 ,  G02B3/0056 ,  G02B3/0068 ,  G03F1/38 ,  G03F9/7038 ,  G03F9/7096

Abstract: An exposure apparatus and an optical member wherein impurities can be prevented from infiltrating between microlens arrays and a substrate, and microlenses can be prevented from being scratched by the impurities and by getting abnormally close to the substrate. Microlens arrays in which pluralities of microlenses are formed are arranged above a transparent substrate, and the microlens arrays are bonded and the end surfaces to a mask. Alignment mark supports are bonded to the mask at both sides of the microlens arrays, and alignment marks are formed in the surfaces of the alignment mark supports that face the substrate. The spaces between the alignment mark supports and the substrate are smaller than the spaces between the microlens arrays and the substrate.

Abstract translation: 可以防止杂质在微透镜阵列和基板之间渗透的曝光装置和光学构件，并且可以防止微透镜被杂质刮伤并且异常靠近基板。 其中形成多个微透镜的微透镜阵列被布置在透明衬底的上方，并且将微透镜阵列接合并将端面贴合到掩模上。 对准标记支撑体在微透镜阵列的两侧与掩模结合，并且在与基板相对的对准标记支撑体的表面中形成对准标记。 对准标记支撑体和基板之间的空间小于微透镜阵列和基板之间的空间。

公开(公告)号：US20150321356A1

公开(公告)日：2015-11-12

申请号：US14705928

申请日：2015-05-06

Applicant: Mapper Lithography IP B.V.

Inventor： Joep Gerard Vijverberg ,  Laurens Vincent Plandsoen ,  Bas van Gelder ,  Guido de Boer ,  Michel Pieter Dansberg

IPC: B25J11/00 ,  G03F9/00

CPC classification number: B25J11/00 ,  G03F7/7075 ,  G03F7/70808 ,  G03F7/70841 ,  G03F9/7096 ,  H01J37/16 ,  H01J37/3177 ,  H01J2237/024 ,  H01J2237/166 ,  H01L21/6719 ,  H01L21/67225 ,  H01L21/67775

Abstract: The invention relates to an assembly for enclosing a target processing machine. The assembly comprises an enclosure and a transfer unit. The enclosure comprises a base plate for arranging said target processing machine thereon, side wall panels, which are fixed to said base plate, and a top wall panel which is fixed to said side wall panels. In addition, the enclosure comprises an access opening in a side wall of the enclosure. The transfer unit comprising one or more transfer elements for moving the transfer unit with respect to the base plate. The transfer unit further comprises a door panel which is arranged for closing the access opening, wherein the door panel is movably mounted to the transfer unit by means of a flexible coupling which allows a movement of the door panel with respect to the transfer unit at least in a direction towards and/or away from the enclosure.

Abstract translation: 本发明涉及用于封闭目标加工机器的组件。 组件包括外壳和转移单元。 外壳包括用于在其上布置所述目标加工机的基板，固定到所述基板的侧壁板和固定到所述侧壁板的顶壁板。 此外，外壳包括在外壳的侧壁中的进入开口。 转印单元包括用于相对于基板移动转印单元的一个或多个转印元件。 传送单元还包括门板，其被布置成用于关闭进入开口，其中门板通过柔性联接件可移动地安装到传送单元，该柔性联接器允许门板相对于传送单元至少移动 在朝向和/或远离外壳的方向上。

公开(公告)号：US20140362356A1

公开(公告)日：2014-12-11

申请号：US14466408

申请日：2014-08-22

Applicant: Nikon Corporation

Inventor： Yuichi SHIBAZAKI

IPC: G03F7/20

CPC classification number: G03F7/70341 ,  G03F7/70425 ,  G03F7/70975 ,  G03F9/7088 ,  G03F9/7096 ,  Y10T29/49002

Abstract: While a wafer stage moves linearly in a Y-axis direction, surface position information of a wafer surface at a plurality of detection points set at a predetermined interval in an X-axis direction is detected by a multipoint AF system, and by a plurality of alignment systems arranged in a line along the X-axis direction, marks at different positions on the wafer are each detected, and a part of a chipped shot of the wafer is exposed by a periphery edge exposure system. This allows throughput to be improved when compared with the case when detection operation of the marks, detection operation of the surface position information (focus information), and periphery edge exposure operation are performed independently.

Abstract translation: 当晶片台在Y轴方向上线性移动时，通过多点AF系统检测在X轴方向上以预定间隔设置的多个检测点处的晶片表面的表面位置信息，并且通过多个 每个检测出沿着X轴方向排列成一行的对准系统，在晶片上的不同位置处的标记，并且通过周边边缘曝光系统使晶片的切片镜头的一部分露出。 与标记的检测操作，表面位置信息（聚焦信息）的检测操作和外围边缘曝光操作独立地执行的情况相比，这允许提高吞吐量。

公开(公告)号：US08856694B2

公开(公告)日：2014-10-07

申请号：US13481564

申请日：2012-05-25

Applicant: Jun Ye ,  Yu Cao ,  James Patrick Koonmen

Inventor： Jun Ye ,  Yu Cao ,  James Patrick Koonmen

IPC: G06F17/50 ,  G05B13/04 ,  G03F7/20

CPC classification number: G03F7/70525 ,  B29C64/386 ,  G03F9/7096 ,  G05B13/04

Abstract: The present invention provides a number of innovations in the area of computational process control (CPC). CPC offers unique diagnostic capability during chip manufacturing cycle by analyzing temporal drift of a lithography apparatus/ process, and provides a solution towards achieving performance stability of the lithography apparatus/process. Embodiments of the present invention enable optimized process windows and higher yields by keeping performance of a lithography apparatus and/or parameters of a lithography process substantially close to a pre-defined baseline condition. This is done by comparing the measured temporal drift to a baseline performance using a lithography process simulation model. Once in manufacturing, CPC optimizes a scanner for specific patterns or reticles by leveraging wafer metrology techniques and feedback loop, and monitors and controls, among other things, overlay and/or CD uniformity (CDU) performance over time to continuously maintain the system close to the baseline condition.

Abstract translation: 本发明提供了计算过程控制（CPC）领域的许多创新。 CPC通过分析光刻设备/工艺的时间漂移​​，在芯片制造周期中提供独特的诊断功能，并为实现光刻设备/工艺的性能稳定性提供了解决方案。 本发明的实施例通过保持光刻设备的性能和/或基本上接近预定义基线条件的光刻工艺的参数来实现优化的工艺窗口和更高的产量。 这通过使用光刻过程模拟模型将测量的时间漂移​​与基线性能进行比较来完成。 一旦制造，CPC通过利用晶片计量技术和反馈回路来优化扫描仪的特定图案或掩模版，以及监视和控制其他方面的覆盖和/或CD均匀性（CDU）性能，以持续保持系统接近 基线条件。

公开(公告)号：US20140293251A1

公开(公告)日：2014-10-02

申请号：US14305110

申请日：2014-06-16

Applicant: ASML Netherlands B.V.

Inventor： Hans Butler ,  Robertus Johannes Marinus De Jongh ,  Hendrik Koevoets ,  Marco Hendrikus Hermanu Oude Nijhuis ,  Robertus Leonardus Tousain ,  Marc Wilhelmus Maria Van Der Wijst ,  Cornelius Adrianus Lambertus De Hoon

IPC: G03F9/00

CPC classification number: G03F9/7096 ,  G03F7/70516 ,  G03F7/7055

Abstract: A projection system is provided that includes a sensor system that measures at least one parameter that relates to the physical deformation of a frame that supports the optical elements within the projection system, and a control system that, based on the measurements from the sensor system, determines an expected deviation of the position of the beam of radiation projected by the projection system that is caused by the physical deformation of the frame.

Abstract translation: 提供一种投影系统，该投影系统包括测量与支撑投影系统内的光学元件的框架的物理变形有关的至少一个参数的传感器系统;以及控制系统，其基于来自传感器系统的测量结果， 确定由框架的物理变形引起的由投影系统投射的辐射束的位置的预期偏差。

公开(公告)号：US08675168B2

公开(公告)日：2014-03-18

申请号：US12809171

申请日：2009-02-17

Applicant: Geoffrey Alan Schultz

Inventor： Geoffrey Alan Schultz

IPC: G03B27/52 ,  G03B27/42

CPC classification number: G01L13/02 ,  G01B13/12 ,  G03F9/7026 ,  G03F9/7034 ,  G03F9/7053 ,  G03F9/7096

Abstract: A gas gauge (100) is provided for use in a vacuum environment having a measurement gas flow channel (105). The gas gauge comprises a measurement nozzle (110) in the measurement gas flow channel (105). The measurement nozzle (110) is configured to operate at a sonically choked flow condition of a volumetric flow being sourced from a gas supply (120) coupled to the measurement gas flow channel (105). The gas gauge (100) further comprises a pressure sensor (127) operatively coupled to the measurement gas flow channel (105) downstream from the sonically choked flow condition of the volumetric flow to measure a differential pressure of the volumetric flow for providing an indication of a gap (130) between a distal end of the measurement nozzle (135) and a target surface (140) proximal thereto.

Abstract translation: 提供一种用于具有测量气体流动通道（105）的真空环境中的气量计（100）。 气量计包括在测量气体流动通道（105）中的测量喷嘴（110）。 测量喷嘴（110）被配置为在来自耦合到测量气体流动通道（105）的气体供应源（120）的体积流量的声波扼流流动条件下操作。 气量计（100）还包括压力传感器（127），该压力传感器（127）可操作地耦合到测量气体流动通道（105），所述测量气体流动通道（105）位于体积流量的声波阻塞流动状态的下游，以测量体积流量的压差， 在测量喷嘴（135）的远端和与其接近的目标表面（140）之间的间隙（130）。